1: \begin{abstract}

2:   Ideal Sharvin contact in a~multimode regime shows the conductance 

3:   $G\approx{}G_{\rm Sharvin}=g_0k_F{}W/\pi$ (with $g_0$ the conductance quantum,

4:   $k_F$ the Fermi momentum, and $W$ the contact width) accompanied by 

5:   strongly suppressed shot-noise quantified by small Fano factor

6:   $F\approx{}0$. 

7:   For ballistic graphene away from the charge-neutrality point the sub-Sharvin

8:   transport occurs, characterised by suppressed conductance

9:   $G\approx{}(\pi/4)\,G_{\rm Sharvin}$ and enhanced shot noise $F\approx{}1/8$.

10:   All these results can be derived from a~basic model of quantum scattering, 

11:   involving assumptions of infinite height and perfectly rectangular shape

12:   of the potential barrier in the sample. 

13:   Here we have carried out the numerical analysis of the scattering on

14:   a family of smooth barriers of finite height interpolating between

15:   parabollic and rectangular shapes.

16:   We find that tuning the barrier shape one can modify the asymmetry

17:   between electron- and hole-doped systems.

18:   For electronic dopings, the system crosses from Sharvin to sub-Sharvin

19:   transport regime (indicated by both the conductance and the Fano factor)

20:   as the potential becomes closer to the rectangular shape.

21:   In contrast, for hole dopings, the conductivity is strongly suppressed

22:   when the barrier is parabolic and slowly converges to

23:   $G\approx{}(\pi/4)\,G_{\rm Sharvin}$ %sub-Sharvin values

24:   as the potential evolves towards rectangular shape. 

25:   In such a~case the Sharvin transport regime is inaccessible,

26:   shot noise is generically enhanced (with much slower convergence

27:   to $F\approx{}1/8$) comparing to the electron-doped case, 

28:   and aperiodic oscillations of both $G$ and $F$  are prominent 

29:   due to the formation of quasibound states. 

30: \end{abstract}

31: