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12: \begin{document}
13: \title{Reverse Hall-Petch effect in ultra nanocrystalline diamond}
14:
15: \author{Ioannis N. Remediakis}
16: \thanks{To whom correspondence should be addressed}
17: \email{remed@materials.uoc.gr}
18: \affiliation{Department of Materials Science and Technology, University of
19: Crete, 71003 Heraklion, Greece}
20: \author{Georgios Kopidakis}
21: \affiliation{Department of Materials Science and Technology, University of
22: Crete, 71003 Heraklion, Greece}
23: \author{Pantelis C. Kelires}
24: \affiliation{Department of Physics, University of Crete, 71003 Heraklion,
25: Greece}
26: \affiliation{Department of Mechanical Engineering and Materials Science and
27: Engineering, Cyprus University of Technology, 3603 Limassol, Cyprus}
28:
29: \begin{abstract}
30: We present atomistic simulations for the mechanical response of ultra
31: nanocrystalline diamond, a polycrystalline form of diamond with grain
32: diameters of the order of a few nm. We consider fully three-dimensional model
33: structures, having several grains of random sizes and orientations, and employ
34: state-of-the-art Monte Carlo simulations. We calculate structural properties,
35: elastic constants and the hardness of the material; our results compare well
36: with experimental observations for this material. Moreover, we verify that
37: this material becomes softer at small grain sizes, in analogy to the observed
38: reversal of the Hall-Petch effect in various nanocrystalline metals. The
39: effect is attributed to the large concentration of grain boundary atoms at
40: smaller grain sizes. Our analysis yields scaling relations for the elastic
41: constants as a function of the average grain size.
42: \end{abstract}
43:
44: \date{May 21, 2008}
45:
46: \keywords{nanocrystalline materials; carbon; hardness \vspace{6mm} \\
47: Proceedings of the IUTAM Symposium on Modelling Nanomaterials and Nanosystems,
48: Aalborg, Denmark, May 19-22 2008; to be published in the IUTAM Bookseries by
49: Springer.
50: \vspace{6mm}}
51:
52: \maketitle
53:
54: \section{Introduction}
55:
56: Most solids are polycrystalline, having grains in the micrometer to millimeter
57: range. As the percentage of atoms residing on grain boundaries is negligible,
58: the polycrystallicity only marginally affects the properties of the
59: material. In particular, mechanical properties of such solids usually depend
60: on bulk properties of the ideal material and the concentration of various
61: defects, such as cracks, dislocations, vacancies and interstitials; usually
62: the grain size is of minor importance. There are, however, properties where
63: grain size plays a key role, hardness being one of them. The Hall-Petch law
64: states that the hardness ($H$) of polycrystalline metals increases with
65: decreasing average grain size ($d$), being a linear function of $d^{-n}$,
66: where $n>$0. The effect is attributed to the impedance of dislocation motion
67: due to grain boundaries (Bata and Pereloma 2004).
68:
69: Modern nanotechnology makes it possible to synthesize nanocrystalline
70: solids, i.e. polycrystalline solids with average grain sizes of a few nm.
71: Such materials offer new possibilities for technological applications,
72: mainly due to their unique mechanical properties (Meyers et al. 2006). The
73: Hall-Petch law dictates that a nanocrystalline solid should have huge
74: hardness, usually much higher than its usual polycrystalline phase. While
75: this is true in most cases, Cu was found to become softer with decreasing
76: grain size in the range between 3 and 7 nm (Schi{\o}tz et al. 1998). This
77: was called the ``reverse Hall-Petch effect''. Later, it was found that many
78: materials posses a ``strongest size'' (Yip 1998), which turned out to be
79: around 15 nm for Cu (Schi{\o}tz and Jacobsen 2003). A similar effect has
80: been observed recently for BN (Dubrovinskaia 2007).
81:
82: The existence of a ``strongest size'' suggests that the mechanism of
83: undertaking mechanical load should be different in the nano-world. In this
84: region, the presence of dislocations no longer governs the mechanical response
85: on the material: as dislocations are extended defects, they cannot reside in
86: the limited space of nano-grains. Any external mechanical load will be
87: primarily undertaken by sliding along grain boundaries (Schi{\o}tz et
88: al. 1998, van Swygenhoven et al. 1999, Yamakov et al. 2004). This, in turn, is
89: a direct consequence of the enormous concentration of grain boundary atoms in
90: a nanocrystalline material. Imagine for example a cube of side $d$, containing
91: $N\times N \times N$ atoms. The fraction of surface atoms is roughly
92: proportional to 6$N^{2}$/$N^{3}$ = 6/$N$ $\approx $ 1 nm/$d$, ranging from 1
93: per million when $d$ is of the order of mm, to 30{\%} when $d$ is around 3 nm.
94:
95: Contrary to a large number of studies for metals, very few studies have
96: addressed the mechanical properties of semiconductors and insulators as a
97: function of their grain size, although several pioneer workers have examined
98: the mechanical response of nanocrystalline ceramics (Demkowicz et al. 2007;
99: Szlufarska et al. 2005). Covalent solids are characterized by their open
100: structures and the strong directionality of their bonds. Such bonds should not
101: allow easy sliding along grain boundaries. At the same time, bonds on grain
102: boundaries will be considerably weaker than those in the bulk of grains, due
103: to the loss of the ideal local bonding geometry (Keblinski et
104: al. 1999). Recent studies in BN (Dubrovinskaia et al. 2007), together with the
105: well-established results for various metals, suggest that the effect might be
106: universal. To check whether this is the case, we study diamond, which
107: comprises the ideal test suite for this purpose. C atoms form perhaps the most
108: directional bonds known, as indicated by the supreme hardness and shear
109: modulus of diamond. In addition to being strong, C-C might in some cases break
110: and form a more stable structure, as threefold $sp^{2}$ C atoms are more
111: stable than fourfold $sp^{3}$ ones, the later being responsible for mechanical
112: failure in carbon-based materials (Fyta et al. 2006; Remediakis et al. 2007).
113:
114: Ultra nanocrystalline diamond (UNCD) is a polycrystalline carbon-based
115: material, with grain diameters mostly between 2 and 5 nm (Gruen 1999). It is
116: a low-cost material with a potential for a wide range of applications due to
117: its unique mechanical and electronic properties (Krauss et al. 2001).
118: Despite the strong directional C-C bonds, resulting in inhomogeneity at the
119: atomic scale, the material can be considered as isotropic at larger scales,
120: as no particular orientation for the grain boundaries in UNCD seems to be
121: favoured in the experiment (Gruen 1999) or simulations (Zapol et al. 2001,
122: Kopidakis et al. 2007).
123:
124:
125: \section{Computational method}
126:
127: We use fully three-dimensional atomistic models for UNCD, having grains of
128: different random size and orientations separated by random grain boundaries.
129: The simulations were performed using a continuous-space Monte Carlo method.
130: We employ the many-body potential of Tersoff (Tersoff 1988), which provides
131: a very good description of the structure and energetics for a wide range of
132: carbon-based materials (Kelires 1994; Kelires 2000). This method, although
133: considerably demanding computationally, allows for great statistical
134: accuracy, as it is possible to have samples at full thermodynamic
135: equilibrium. Such accuracy is necessary in order to capture all
136: hybridizations of C.
137:
138: We model UNCD by a periodic repetition of cubic supercells that consist of
139: eight different regions (grains). The number of grains in the unit cell
140: guarantees the absence of artificial interactions between a grain and its
141: periodic images. The grains have random shapes and sizes, and are filled
142: with atoms in a randomly oriented diamond structure. The method we use is
143: identical to the method used by Schi{\o}tz et al. (Schi{\o}tz et al. 1998;
144: Schi{\o}tz and Jacobsen 2003). To achieve a fully equilibrated structure for
145: each grain size, we perform four steps: first, the structure is compressed
146: and equilibrated at constant volume at 300 K, in order to eliminate large
147: void regions near some grain boundaries, that are an artifact of the
148: randomly generated structure. In the second step, we anneal the system at
149: 800 K allowing volume relaxation and quench down to 300 K. Third, we anneal
150: once more, at 1200 K this time, in order to ensure full equilibration.
151: Fourth, we fully relax the structure at 300 K allowing for changes in both
152: volume and shape of the unit cell.
153:
154:
155:
156: \begin{table}
157: \caption{Properties of some characteristic UNCD samples at 300K: average grain
158: size ($d$, in nm); number of atoms in the simulation cell ($N$);
159: percentage of three-fold atoms in the cell ($N_{3}$, at {\%}); mass
160: density ($\rho$, in g/cc); cohesive energy ($E_{c}$, in eV
161: per atom); bulk ($B$), Young's ($E$) and shear ($G$)
162: moduli (all in GPa); Vickers hardness ($H$), as estimated from the
163: theory of Gao et al. (Gao et al. 2003). For comparison, the corresponding
164: values for single-crystal diamond, calculated with the same method (‰elires
165: 1994), are shown in the last line.}
166:
167: \begin{center}
168: \begin{tabular}{rrrrrrrrr}
169: \hline
170: $d$&
171: $N$&
172: $N_{3}$&
173: $\rho $&
174: $E_{c}$&
175: $B$&
176: $E$&
177: $G$&
178: $H$ \\
179: \hline
180: 2.4&
181: 18,528&
182: 26&
183: 3.22&
184: -7.06&
185: 323&
186: 808&
187: 373&
188: 89.8 \\
189: \hline
190: 3.4&
191: 53,494&
192: 12&
193: 3.30&
194: -7.10&
195: 363&
196: 939&
197: 439&
198: 90.9 \\
199: \hline
200: 4.4&
201: 116,941&
202: 9&
203: 3.40&
204: -7.15&
205: 384&
206: 987&
207: 461&
208: 91.6 \\
209: \hline
210: $\infty $&
211: $\infty $&
212: 0&
213: 3.51&
214: -7.33&
215: 443&
216: 1066&
217: 485&
218: 94.2 \\
219: \hline
220: \end{tabular}
221: \label{tab1}
222: \end{center}
223: \end{table}
224:
225: \begin{figure}
226: \centerline{\includegraphics[width=\columnwidth]{rem1.eps}}
227: \label{fig1}
228: \caption{ Relaxed model structure for Ultra-Nanocrystalline Diamond, with an
229: average grain size of 4.4 nm. Atoms are coloured according to their number of
230: neighbours ($z$) and average angle between their bonds ($\theta $). Atoms in
231: the diamond structure ($z$=4, $\cos\theta $=-1/3) are coloured gray; all other
232: atoms are coloured blue.}
233: \end{figure}
234:
235:
236: \section{Structure and elastic moduli}
237:
238: The relaxed structure for a typical sample is shown in Fig. 1. The grain
239: boundaries are a few atomic diameters across, in accordance with experiments
240: showing widths of 0.2-0.5 nm (Gruen 1999). Atoms at grain boundaries are
241: either three-fold coordinated or form bonds at different lengths or angles
242: from those observed in diamond. The structural and elastic properties for
243: characteristic samples are summarized in Table I. The fraction of the
244: three-fold atoms in the samples is about 1/10 for grain sizes between 3.5
245: and 4.5 nm; in experiment, it was observed that the fraction of atoms
246: residing at grain boundaries is close to 10{\%} for similar crystallite
247: sizes (Gruen 1999). The density of UNCD increases with increasing
248:
249: grain size, as both the percentage of \textit{sp}$^{2}$ atoms and the
250: concentration of voids is decreased. The cohesive energy decreases with
251: increasing grain size, suggesting that most grain boundary atoms should be
252: considered as defective ones.
253:
254: The bulk modulus of UNCD decreases with decreasing grain size, despite the
255: increase in the fraction of energetically favorable \textit{sp}$^{2}$ atoms.
256: Although they have lower energy, \textit{sp}$^{2}$ C atoms are actually
257: easier to deform compared to \textit{sp}$^{3}$ ones. This can be
258: demonstrated by employing the concept of local bulk moduli (Kelires 2000). A
259: similar analysis of our samples yields the average local bulk modulus of
260: \textit{sp}$^{2 }$atoms to be around 250 GPa, while the average bulk modulus
261: of \textit{sp}$^{3 }$atoms is around 420 GPa. This agrees very well with
262: experimental observations for UNCD where the grain boundaries have been
263: found to have much lower local bulk moduli than the bulk of grains (Pantea
264: et al. 2006).
265:
266: \begin{figure}
267: \centerline{\includegraphics[width=\columnwidth]{rem2.eps}}
268: \label{fig2}
269: \caption{Cohesive energy ($E_{c})$ , bulk modulus ($B$), Young's modulus ($E$)
270: and shear modulus ($G$) of UNCD as a function of the average grain size. Solid
271: lines in the upper panels are fits to the simulations. The triangle in the
272: graph for $E$ represents an experimental measurement (Espinosa et al. 2006). }
273: \end{figure}
274:
275:
276: \section{Hardness}
277:
278: Decrease of all elastic moduli with decreasing average grain size suggests
279: that the hardness of the material should also drop with decreasing grain
280: size, as the hardness of many materials is proportional to the Young's or
281: shear modulus (Brazhkin et al. 2002); in particular, the hardness of all
282: known carbon-based materials has been found to be between 10{\%} and 16{\%}
283: of the Young's modulus (Robertson 2002). Elastic moduli are reliable probes
284: of hardness for nanocrystalline solids, as the later cannot contain extended
285: defects, such as cracks or dislocations, that have characteristic lengths
286: exceeding the size of the grains.
287:
288: To get a quantitative description of hardness, we use the theory of Gao et
289: al., who correlate the Vickers hardness of covalent crystals with the
290: electron density per bond and the energy gap of the material (Gao et al.
291: 2003). The hardness of a complex material is the geometrical mean of the
292: values of hardness for each subsystem. Here, we consider each individual
293: pair of neighbouring C atoms as a subsystem. The density of valence
294: electrons in a particular bond can be obtained from the bond length and the
295: coordination numbers of the two atoms that participate in this bond. The
296: calculated hardness of UNCD is shown in Fig. 3, demonstrating the existence
297: of the reverse Hall-Petch effect for this material.
298:
299: \begin{figure}
300: \centerline{\includegraphics[width=\columnwidth]{rem3.eps}}
301: \label{fig3}
302: \caption{Estimated hardness of UNCD as a function of the average
303: grain size. Hardness is calculated based on the theory of F. Gao et al. for
304: covalent solids (Gao et al. 2003).}
305: \end{figure}
306:
307:
308: \section{Scaling laws for the properties of UNCD}
309:
310: To understand the mechanism behind softening of UNCD, as well as other
311: materials, at low grain sizes, we consider the different types of atoms and
312: local bonding geometries that exist in a nanocrystalline material. The main
313: dramatic change that takes place in a polycrystalline material as its grain
314: size enters the nm regime is the increase in the fraction of atoms residing
315: near grain boundaries. Atoms at grain faces, edges or vertexes, as well as
316: atoms near other discontinuities, will naturally form bonds that are weaker
317: than those formed by atoms in the bulk. Such weaker bonds will then bend or
318: stretch with greater ease, compared to the bonds in the crystalline region.
319: This explains the softening of polycrystalline solids when the grain size is
320: at the nanometer range. For much larger grain sizes, the number of
321: grain-boundary atoms will be negligible compared to the number of bulk
322: atoms; in this regime, the behavior of the material under mechanical load
323: will be mostly determined by bulk defects, such as dislocations.
324:
325: To make this picture quantitative, let us divide the atoms in the
326: polycrystalline material into three categories:
327:
328: \begin{enumerate}
329: \item Atoms deep inside the grains, forming bonds that are similar to those in
330: the single-crystal material. The number of such atoms is proportional to
331: \textit{d}$^{3}$, where \textit{d} is the average grain size.
332: \item Atoms near the grain boundary; these behave similarly to surface or
333: interface atoms. The number of such atoms is proportional to \textit{d}$^{2}$.
334: \item Atoms near grain boundary edges; these are similar to kink surface
335: atoms, or atoms near dislocation cores. The number of such atoms is
336: proportional to \textit{d}.
337: \end{enumerate}
338: Of course, there will be other types of atoms, such as vertex atoms or atoms
339: near topologic defects, but their number will be much smaller than the
340: numbers of atoms falling in one of the aforementioned categories. The
341: cohesive energy of the solid will be the sum of the energies of the three
342: different atom types, multiplied by their respective numbers, and divided by
343: the total number of atoms, which is proportional to \textit{d}$^{3}$.
344: Therefore, the cohesive energy should be described by a function of the form
345:
346: \begin{center}
347: \textit{E}$_{c}$ = \textit{E}$_{0}$ +\textit{a/d}+\textit{b/d}$^{2}$,
348: \end{center}
349:
350: where \textit{a} and \textit{b} are constants, and \textit{E}$_{0}$ is the
351: cohesive energy of the single crystal.
352:
353: Indeed, such a function fits our data perfectly, the rms error being less
354: than 0.5{\%}. Moreover, \textit{E}$_{0}$ is found to be -7.31 eV, very close
355: to the calculated cohesive free energy of diamond at 300 K, which is -7.33
356: eV. As B is proportional to the second derivative of the total energy with
357: respect to the system volume, it can also be decomposed into contributions
358: from bulk, interface and vertex atoms. As shown in Fig. 2, a quadratic
359: function of 1/\textit{d} fits the results of the simulation very nicely. The
360: constant value, 467 GPa, corresponding to the ideal monocrystalline solid,
361: is only 5{\%} off the calculated value for diamond (see Table I). Such a
362: decomposition of the total bulk modulus to a sum of atomic-level moduli has
363: been used previously, in order to investigate the rigidity of amorphous
364: carbon (Kelires 2000).
365:
366: A similar scaling law should also hold for the mass density of UNCD as a
367: function of grain size, assuming that the volume per atom is different for
368: atoms in grain boundaries and atoms in the bulk of grains. Fitting our data
369: to a quadratic form of 1/\textit{d} gives \textit{$\rho
370: $=}3.6-1.2/\textit{d}+0.4/\textit{d}$^{2}$. Again, the agreement of the
371: constant value with the calculation for ideal diamond (Table I) is very good
372: (3{\%}).
373:
374: Hardness is related to the electron density according to Gao et al.; the
375: local electron density is proportional to the local mass density, as all C
376: atoms have the same number of electrons. Therefore, hardness should also be
377: decomposed into contributions from different kinds of atoms. As shown in
378: Fig. 3, the hardness of UNCD can be fitted to a quadratic form of
379: 1/\textit{d. }Moreover, the constant term, showing the limit of hardness as
380: \textit{d} goes to infinity, coincides with the hardness of diamond at 300
381: K, calculated using the same method (see Table I).
382:
383: The Young's and shear modulus of UNCD will not necessarily follow the same
384: scaling law. As both moduli are related to bond bending, the nature of the
385: inter-atomic bonds is perhaps equally important to their number. We tried to
386: fit our simulation data to a quadratic form of 1/\textit{d}. Although the
387: fit does not look disappointing, the rms error in the fits were
388: significantly higher than those for the fits of \textit{E}$_{c}$,
389: \textit{B}, \textit{$\rho $} or \textit{H}; moreover, the constant values
390: deviate from the properties of diamond by more than 20{\%}. However, even
391: such a poor agreement between model and simulation provides extra evidence
392: that our model has some solid basis.
393:
394:
395: \section{Conclusions}
396:
397: Using ultra-nanocrystalline diamond (UNCD) as a prototype for a
398: polycrystalline covalent solid with grains at the nanometer region, we have
399: observed softening of the material as the grain size decreases, in analogy
400: with the reverse Hall-Petch effect observed in nanocrystalline metals. The
401: effect is attributed to the increasing fraction of grain-boundary atoms as
402: the grain size decreasing. A simple quadratic form in 1/\textit{d}, where
403: \textit{d} is the average grain size, suffices to provide excellent fit of
404: our results for cohesive energy, mass density, bulk modulus and estimated
405: hardness, while it yields the correct values for bulk diamond. The measured
406: Young's modulus of UNCD is reproduced well by the simulations. Our results
407: provide further evidence that softening at low grain sizes might be a
408: universal property for nanocrystalline solids.
409:
410: \acknowledgments{The authors are grateful to Prof. Jacob Schi{\o}tz who shared
411: his programs for generating models of nanocrystalline solids, and acknowledge
412: inspiring discussions with Dr. Maria Fyta. This work was supported by a grant
413: from the Ministry of National Education and Religious Affairs in Greece
414: through the action ``$\mathrm{E}\Pi\mathrm{EAEK}$'' (programme ``$\Pi \Upsilon
415: \Theta$A$\Gamma$OPA$\Sigma$'').}
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