1: \begin{abstract}

2: We present a fully {\em ab initio} study of the vacancy in bulk silicon in all its charge states from $2+$ to $2-$, using a supercell approach within plane-wave density-functional theory (DFT). We show that defect formation energies and stable charge state transition levels exhibit different convergence rates with respect to supercell size for a given Brillouin zone sampling scheme, and that this convergence may be accelerated by a suitable choice of sampling. Calculations on large 1000-atom supercells with the {\sc onetep} linear-scaling DFT code show that at this system size simultaneous convergence of both quantities is achieved. We also demonstrate a new, accurate and simple approach that uses maximally-localized Wannier functions (MLWFs) in order to calculate the valence band offsets that are required for computing formation energies. Finally, we show that MLWFs provide a clear description of the nature of the electronic bonding at the defect centre that verifies the Watkins model.

3: \end{abstract}

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