1: \begin{abstract}

2: The low temperature electrical conductance through correlated quantum dots provides a sensitive probe of the 

3: physics (e.g., of Fermi-liquid versus non-Fermi-liquid behavior) of such systems. Here, we investigate 

4: the role of level asymmetry (gate voltage) and local Coulomb

5: repulsion (charging energy) on the low-temperature and low-field scaling properties of the linear conductance of a quantum dot 

6: described by the single-level Anderson impurity model. We use the numerical renormalization group 

7: to quantify the regime of gate voltages and charging energies

8: where universal Kondo scaling may be observed and also quantify the deviations from this universal behavior with

9: increasing gate voltage away from the Kondo regime and with decreasing charging energy. We also compare our results 

10: with those from a recently developed method for linear and non-linear transport, which is based on renormalized 

11: perturbation theory using dual fermions, finding excellent agreement at particle-hole symmetry

12: and for all charging energies and reasonable agreement at small finite level asymmetry. Our results could be

13: a useful guide for detailed experiments on conductance scaling in semiconductor and molecular quantum dots exhibiting

14: the Kondo effect.

15: \end{abstract}

16: