1: \begin{abstract}

2: The Kapitza or thermal boundary resistance (TBR), which limits heat

3: dissipation from a thin film to its substrate, is a major factor in

4: the thermal management of ultrathin nanoelectronic devices and is

5: widely assumed to be a property of only the interface. However, data

6: from experiments and molecular dynamics simulations suggest that the

7: TBR between a multilayer two-dimensional (2D) crystal and its substrate

8: decreases with increasing film thickness. To explain this thickness

9: dependence, we generalize the recent theory for single-layer 2D crystals

10: by Z.-Y. Ong \emph{et al.} {[}Phys. Rev. B 94, 165427 (2016){]}, which

11: is derived from the theory by B. N. J. Persson \emph{et al.} {[}J.

12: Phys.: Condens. Matter 23, 045009 (2011){]}, and use it to evaluate

13: the TBR between bare $N$-layer graphene and SiO$_{2}$. Our calculations

14: reproduce quantitatively the TBR thickness dependence seen in experiments

15: and simulations as well as its asymptotic convergence, and predict

16: that the low-temperature TBR scales as $T^{-4}$ in few-layer graphene.

17: Analysis of the interfacial transmission coefficient spectrum shows

18: that the TBR reduction in few-layer graphene is due to the additional

19: contribution from higher flexural phonon branches. Our theory sheds

20: light on the role of flexural phonons in substrate-directed heat dissipation

21: and provides the framework for optimizing the thermal management of

22: multilayered 2D devices. 

23: \end{abstract}

24: