1: \begin{abstract}

2: We present a systematic methodology for the accurate calculation of

3: defect structures in supercells which we illustrate with a study of

4: the neutral vacancy in silicon. This is a prototypical defect which

5: has been studied extensively using \emph{ab initio} methods, yet remarkably

6: there is still no consensus about the energy or structure of this

7: defect, or even whether the nearest neighbour atoms relax inwards

8: or outwards. In this paper we show that the differences between previous

9: calculations can be attributed to supercell convergence errors, and

10: we demonstrate how to systematically reduce each such source of error.

11: The various sources of scatter in previous theoretical studies are

12: discussed and a new effect, that of supercell symmetry, is identified.

13: It is shown that a consistent treatment of this effect is crucial

14: to understanding the systematic effects of increasing the supercell

15: size. This work therefore also presents the best converged \emph{ab

16: initio} study of the neutral silicon vacancy to date.

17: \end{abstract}

18: