1: \begin{abstract}

2: We consider an effect of weak impurities on electronic properties of graphene

3: within the functional renormalization-group approach. The energy dependences

4: of the electronic self-energy and density of states near the neutrality point

5: are discussed. Depending on the symmetry of the impurities, the electronic

6: damping $\Gamma$ and density of states $\rho$ can deviate substantially from

7: those given by the self-consistent Born approximation. We investigate the

8: crossover from the results of the self-consistent Born approximation, which

9: are valid far from the neutrality point to the strong-coupling (diffusive)

10: regime near the neutrality point. For impurities, which are diagonal in both,

11: valley and sublattice indices, we obtain finite density of states at the Fermi

12: level with the values, which are much bigger than the result of

13: self-consistent Born approximation.

14: 

15: \end{abstract}