1: \begin{abstract}

2: We theoretically investigate the electron transport properties for

3: a semiconductor quantum wire containing a single finite-size

4: attractive impurity under an external terahertz electromagnetic

5: field illumination in the ballistic limit. Within the effective

6: mass free-electron approximation, the scattering matrix for the

7: system has been formulated by means of a time-dependent mode

8: matching method. Some interesting properties of the electron

9: transmission for the system have been shown through a few groups

10: of numerical examples. It is found that in the case of the

11: comparative stronger field amplitude and the frequency resonant

12: with the two lowest lateral energy levels in the impurity region,

13: the field-induced intersubband transition dominates the process as

14: if without the impurity. And there is a step-arising on the

15: transmission as a function of the incident electron energy.

16: However, in the case of lower field amplitude and the non-resonant

17: frequencies both multiple symmetry Breit-type resonance peaks and

18: asymmetry Fano-type dip lines appear in the electron transmission

19: dependence on the incident energy due to the presence of the

20: impurity and the external field. Therefore, within certain energy

21: range the transmission as a function of the field frequency and/or

22: field amplitude shows a rich structure. Moreover, the transmission

23: dependence on the strength and size of the impurity is also

24: discussed. It is suggested that these results mostly arise from

25: the interplay effects between the impurity in a quantum wire and

26: the applied field.

27: 

28: \end{abstract}

29: