1: \begin{abstract}

2: 

3: Convergence of density-functional supercell 

4: calculations for defect formation energies, charge 

5: transition levels, localized defect state properties,

6: and defect atomic structure 

7: and relaxation is investigated using the arsenic split 

8: interstitial in GaAs as an example.  

9: Supercells containing up to 217 atoms and a variety 

10: of {\bf k}-space sampling schemes are considered.  

11: It is shown that a good description of the 

12: localized defect state dispersion and charge state 

13: transition levels requires at least  

14: a 217-atom supercell, although the defect structure and atomic relaxations can 

15: be well converged in a 65-atom cell.

16: Formation energies are calculated for the As split interstitial, 

17: Ga vacancy, and 

18: As antisite defects in GaAs, taking into account the 

19: dependence upon chemical potential and Fermi energy.

20: It is found that equilibrium concentrations of As interstitials will 

21: be much lower than equilibrium concentrations of As antisites in 

22: As-rich, $n$-type or semi-insulating GaAs.

23: \end{abstract}

24: