1: \begin{abstract}

2: The development of a method for calculating 

3: the frequency dependent second harmonic

4: generation coefficient of insulators and semiconductors based 

5: on the self-consistent linearized muffin-tin orbitals (LMTO) 

6: band structure method is reported.

7: The calculations are at the independent particle level and are based

8: on the formulation introduced by Aversa and Sipe (1995). 

9: The terms are re-arranged in such a way as to exhibit explicitly

10: all required symmetries including the Kleinman symmetry 

11: in the static limit.

12: Computational details and convergence tests are presented. 

13: The calculated frequency dependent $\chi^{(2)}(-2\omega,\omega,\omega)$ 

14: for the zinc-blende

15: materials GaAs, GaP and wurtzite GaN and AlN are found to be in

16: excellent agreement with that obtained by other first-principles

17: calculations when corrections to the local density approximation (LDA)

18: are implemented in the same manner,

19: namely, using the ``scissors'' approach.

20: Similar agreement is found for the static values of $\chi^{(2)}$

21: for zincblende GaN, AlN, BN and SiC. 

22: The strict validity of the usual ``scissors'' operator implementation 

23: is, however, questioned. We show that better agreement 

24: with experiment is obtained when the corrections to the low

25: lying conduction bands are applied

26: at the level of the Hamiltonian, which guarantees

27: that eigenvectors are consistent with the eigenvalues. 

28: New results are presented for the frequency dependent 

29: $\chi^{(2)}(-2\omega,\omega,\omega)$

30: for 3C-SiC.

31: The approach is found to be very efficient and flexible which indicates

32: that it will be useful for a wide variety of material systems including

33: those with many atoms in the unit cell.

34: \end{abstract}

35: