1: \begin{abstract}

2: Although the melting temperature, $T_{m}$, of a solid can be calculated based on first-principles molecular dynamics (FP-MD) simulations, systematic assessments of the accuracy of the resulting values have not yet been reported. FP-MD simulations require significant computational resources and hence an examination of the effect of cell size on convergence is difficult. In addition, calculation of the energy of a liquid is not a trivial problem because of energy dissipation effects.

3: The present work attempts to resolve these problems, and thus allow the accuracy of $T_{m}$ values obtained from FP-MD simulations to be assessed for typical semiconductors, metals, and oxides. With the exception of Si, the $T_{m}$ value was overestimated in all cases. This overestimation can be reduced by increasing the cell size, although the convergence is slow unless the potential is very shallow. 

4: For oxides, this overestimation may not be removed by increasing the cell size. The LDA/GGA error of overbinding affects the melting enthalpy and thereby $T_{m}$. In order to fully capture the energy dissipation nature of liquids, adiabatic MD simulations are required, and such simulations have been performed in the present study.

5: \end{abstract}

6: