37834d6ef1c14081.tex
1: \begin{abstract}
2: The one-electron density of states for the half-filled Hubbard model on a
3: triangular lattice is studied as a function of both temperature and \
4: Hubbard $U$ using Quantum Monte Carlo. We find three regimes: (1) a
5: strong-coupling Mott-Hubbard regime, characterized by a gap which persists
6: even at high temperatures; (2) a weak-coupling paramagnetic regime,
7: characterized by the absence of a pseudogap at any finite temperature; and
8: (3) an intermediate-coupling (spiral) spin-density-wave regime,
9: characterized by a pseudogap which appears when $U$ is increased beyond a
10: critical (temperature dependent) value. The behavior of the $\sqrt{3}\times 
11: \sqrt{3}$ adlayer structures on fourth-group semiconductor surfaces is
12: briefly commented upon in the light of the above discussion.
13: 
14: {\bf Keywords} Hubbard modeling. Semiconducting surfaces. Charge and spin
15: density waves. Surface Mott insulators.
16: 
17: {\bf PACS:} 73.20.At; 75.30.Fv; 75.30.Pd; 71.15.Mb
18: \end{abstract}
19: