1: \begin{abstract}

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3: Solving real-world nonlinear semiconductor device problems modeled by the drift-diffusion equations coupled with the Poisson equation (also known as the Poisson-Nernst-Planck equations) necessitates an accurate and efficient numerical scheme which can avoid non-physical oscillations even for problems with extremely sharp doping profiles. In this paper, we propose a flexible and high-order hybridizable discontinuous Galerkin (HDG) scheme with harmonic averaging (HA) technique to tackle these challenges. The proposed HDG-HA scheme combines the robustness of finite volume Scharfetter-Gummel (FVSG) method with the high-order accuracy and $hp$-flexibility offered by the locally conservative HDG scheme. The coupled Poisson equation and two drift-diffusion equations are simultaneously solved by the Newton method. Indicators based on the gradient of net doping $N$ and solution variables are proposed to switch between cells with HA technique and high-order conventional HDG cells, utilizing the flexibility of HDG scheme.

4: Numerical results suggest that the proposed scheme does not exhibit oscillations or convergence issues, even when applied to heavily doped and sharp PN-junctions. Devices with circular junctions and realistic doping profiles are simulated in two dimensions, qualifying this scheme for practical simulation of real-world semiconductor devices. 

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8: \end{abstract}

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