1: \begin{abstract}

2: %

3: Ferroelectric (FE) size effects against the scaling law were reported recently

4: in ultrathin group-IV monochalcogenides, and extrinsic effects (e.g. defects and lattice

5: strains) were often resorted to.

6: %

7: Via first-principles based finite-temperature ($T$) simulations,

8: we reveal that these abnormalities are intrinsic to their unusual symmetry breaking

9: from bulk to thin film.

10: %

11: Changes of the electronic structures result in different order parameters characterizing the FE phase

12: transition in bulk and in thin films, and invalidation of the scaling law.

13: %

14: Beyond the scaling law $T_{\text{c}}$ limit, this mechanism can help predicting materials promising

15: for room-$T$ ultrathin FE devices of broad interest.

16: %

17: \end{abstract}

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