1: \begin{abstract}  

2: The model introduced in  \cite{HP:2019} in the framework of the theory on Stress-Driven Rearrangement Instabilities (SDRI) \cite{AT:1972,Gr:1993} for the morphology of crystalline  material under stress  is considered. The existence of solutions is established in dimension two in the absence of graph-like assumptions and of the restriction to a finite number $m$ of connected components for the free boundary of the region occupied by the crystalline material, thus extending previous results for epitaxially strained thin films and material cavities \cite{BCh:2002,FFLM:2007,FFLM:2011,HP:2019}. Due to the lack of compactness and lower semicontinuity  for the sequences of $m$-minimizers, i.e., minimizers among configurations with at most $m$ connected boundary components, a minimizing candidate is directly constructed, and then shown to be a minimizer by means of uniform density estimates and the convergence of $m$-minimizers' energies to the energy infimum as $m\to\infty$. Finally,  regularity properties for the morphology  satisfied by every minimizer are  established.

3: \end{abstract}

4: