1: \begin{abstract}

2: In this paper we present a modified localization landscape theory to

3: calculate localized/confined electron and hole states and the

4: corresponding energy eigenvalues without solving a (large)

5: eigenvalue problem. We motivate and demonstrate the benefit of

6: solving $\hat{H}^2u=1$ in the modified localization landscape theory

7: in comparison to $\hat{H}u=1$, solved in the localization landscape

8: theory. We detail the advantages by fully analytic considerations

9: before targeting the numerical calculation of electron and hole

10: states and energies in III-N heterostructures. We further discuss

11: how the solution of $\hat{H}^2u=1$ is used to extract an effective

12: potential $W$ that is comparable to the effective potential obtained

13: from $\hat{H}u=1$, ensuring that it can for instance be used to

14: introduce quantum corrections to drift-diffusion transport

15: calculations. Overall, we show that the proposed modified

16: localization landscape theory keeps all the benefits of the recently

17: introduced localization landscape theory but further improves

18: factors such as convergence of the calculated energies and the

19: robustness of the method against the chosen integration region for

20: $u$ to obtain the corresponding energies. We find that this becomes

21: especially important for here studied $c$-plane InGaN/GaN quantum

22: wells with higher In contents. All these features make the proposed

23: approach very attractive for calculation of localized states in

24: highly disordered systems, where partitioning the systems into

25: different subregions can be difficult.

26: 

27: \end{abstract}

28: