1: \begin{abstract}

2: We describe the mechanism of charge-spin transformation in a

3: double quantum dot (DQD) with even occupation, where a time

4: dependent gate voltage $v_g(t)$ is applied to one of its two valleys,

5: whereas the other one is coupled to the source and drain electrodes.

6: The Kondo tunneling regime under  strong Coulomb blockade may be

7: realized when the spin spectrum of the DQD is formed by the ground

8: state spin triplet and two singlet excitations. Charge

9: fluctuations induced by $v_g(t)$ result in transitions within the

10: spin multiplet characterized by the $SO(5)$ dynamical symmetry group. In

11: a weakly non-adiabatic regime the decoherence, dephasing and

12: relaxation processes affect Kondo tunneling. Each of these

13: processes is caused by a special type of dynamical gauge

14: fluctuations, so that one may discriminate between the decoherence

15: in the ground state of a DQD and dephasing at finite temperatures.

16: \end{abstract}

17: