1: \begin{abstract} The Miller-Abrahams (MA) random resistor network is given by a complete graph on a marked simple point process with edge conductivities depending on the marks and decaying exponentially in the edge length. As Mott random walk, it is an effective model to study Mott variable range hopping in amorphous solids as doped semiconductors. By using 2-scale homogenization
2: we prove that a.s. the infinite volume conductivity of the MA resistor network is given by an effective homogenized matrix $D$ times the mean point density. Moreover, $D$ admits a variational characterization and equals the limiting diffusion matrix of Mott random walk. This result clarifies the relation between the two models and it also allows to extend to the MA resistor network the existing bounds on $D$ in agreement with the physical Mott law \cite{FM,FSS}. The latter
3: concerns the low temperature stretched exponential decay of conductivity in amorphous solids. The techniques developed here can be applied to other models, as e.g. the random conductance model, without ellipticity assumptions.
4: %The result also allow improvements of the lower bounds. The developed techniques are general and can be applied to get finite volume approximations of the effective homogenized matrix in the random conductance model \cite{F_fva}.
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7: \smallskip
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9: \noindent
10: {\em Keywords}:
11: Marked simple point process, Mott variable range hopping, Miller--Abrahams random resistor network, Mott random walk, homogenization, 2-scale convergence.
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14: \smallskip
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16: \noindent
17: {\em AMS 2010 Subject Classification}:
18: %60K35, %Interacting random processes; statistical mechanics type models; percolation theory
19: 60G55, %point processes
20: %82B43, % percolation
21: %82C05. %Classical dynamic and nonequilibrium statistical mechanics (general)
22: 74Q05, % Homogenization in equilibrium problems
23: 82D30 % Random media, disordered materials
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25: \end{abstract}
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