1: \begin{abstract}

2: Experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}) is a piezoelectric semiconductor.

3: Here, we systematically study the large biaxial (isotropic)  strain effects (0.90 to 1.10) on  electronic structures and transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ by density functional theory (DFT). With $a/a_0$ from 0.90 to 1.10, the energy band gap firstly increases, and then decreases, which is due to transformation of  conduction band minimum (CBM). Calculated results show that the $\mathrm{MoSi_2N_4}$ monolayer is mechanically stable in considered strain range.

4: It is found that the spin-orbital coupling (SOC) effects on Seebeck coefficient depend on the strain. In unstrained $\mathrm{MoSi_2N_4}$,

5:  the SOC has neglected influence on Seebeck coefficient. However, the SOC can produce important influence on Seebeck coefficient, when the strain is applied, for example 0.96 strain.

6: The compressive strain can change relative position and numbers of conduction band extrema (CBE), and then the strength of conduction bands convergence  can be enhanced, to the benefit of n-type $ZT_e$.  Only about 0.96 strain can effectively improve  n-type $ZT_e$.

7:  Our works imply that strain can effectively

8: tune the  electronic structures and transport coefficients of monolayer $\mathrm{MoSi_2N_4}$, and can  motivate farther experimental exploration.

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17: \end{abstract}

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