1: \begin{abstract}

2: The total energy differences between various SiC polytypes

3: (3C, 6H, 4H, 2H, 15R and 9R) were calculated using the full-potential

4: linear muffin-tin orbital method using the 

5: Perdew-Wang-(91)  generalized gradient

6: approximation to the exchange-correlation functional 

7: in the density functional method.

8: Numerical convergence versus {\bf k}-point sampling 

9: and basis set  completeness are demonstrated to be better than 1 meV/atom. 

10: The parameters of several generalized 

11: anisotropic next-nearest-neighbor Ising models are 

12: extracted and their significance and consequences for epitaxial growth 

13: are discussed. 

14: \end{abstract}

15: