1: \begin{abstract}

2: %

3: We investigate the accuracy of rigorous coupled wave analysis (RCWA) for

4: near-field computations within cylindrical GaAs nanowire solar cells and

5: discover excellent accuracy with low computational cost at long incident

6: wavelengths, but poor accuracy at short incident wavelengths. These near fields

7: give the carrier generation rate, and their accurate determination is essential

8: for device modeling. We implement two techniques for increasing the accuracy of

9: the near fields generated by RCWA, and give some guidance on parameters

10: required for convergence along with an estimate of their associated computation

11: times. The first improvement removes Gibbs phenomenon artifacts from the

12: RCWA fields, and the second uses the extremely well-converged far field

13: absorption to rescale the local fields.  These improvements allow a

14: computational speedup between 30 and 1000 times for spectrally integrated

15: calculations, depending on the density of the near fields desired.  Some

16: spectrally resolved quantities, especially at short wavelengths, remain

17: expensive, but RCWA is still an excellent method for performing those calculations.

18: These improvements open up the possibility of using RCWA for low cost optical

19: modeling in a full optoelectronic device model of nanowire solar cells.

20: %

21: \end{abstract}

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