1: \begin{abstract}

2: 

3: %The accurate and precise \emph{ab initio} description of effective masses is required to compute e.g. carrier mobilities, carrier densities, and density of states.

4: The knowledge of effective masses is a key ingredient to analyze numerous properties of semiconductors, like carrier mobilities, (magneto-)transport properties, or band extrema characteristics yielding carrier densities and density of states. 

5: Currently, these masses are usually calculated using finite-difference estimation of density functional theory (DFT) electronic band curvatures.

6: However, finite differences require an additional convergence study and are prone to numerical noise. 

7: Moreover, the concept of effective mass breaks down at degenerate band extrema.

8: We assess the former limitation by developing a method that allows to obtain the Hessian of DFT bands directly, using density functional perturbation theory (DFPT).

9: Then, we solve the latter issue by adapting the concept of `transport equivalent effective mass' to the $\vec{k} \cdot \hat{\vec{p}}$ framework.

10: The numerical noise inherent to finite-difference methods is thus eliminated, along with the associated convergence study. 

11: The resulting method is therefore more general, more robust and simpler to use, which makes it especially appropriate for high-throughput computing.

12: After validating the developed techniques, we apply them to the study of silicon, graphane, and arsenic.

13: The formalism is implemented into the ABINIT software and supports the norm-conserving pseudopotential approach, the projector augmented-wave method, and the inclusion of spin-orbit coupling.

14: The derived expressions also apply to the ultrasoft pseudopotential method.

15: % TODO : Notes, p.158

16: % - For next article: LaNiO_3 and effective mass problem within DFT/GW, interesting for supra.

17: 

18: \end{abstract}

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