1: \begin{abstract}

2: We present an all-electron, periodic {\GnWn} implementation within the numerical atomic orbital (NAO) basis framework. A localized variant of

3: the resolution-of-the-identity (RI) approximation is employed to significantly reduce the computational cost of evaluating and 

4: storing the two-electron Coulomb repulsion integrals. We demonstrate that the error arising from localized RI approximation can be reduced to

5: an insignificant level by enhancing

6: the set of auxiliary basis functions, used to expand the products of two single-particle NAOs. An efficient algorithm is introduced to deal with     

7: the Coulomb singularity in the Brillouin zone sampling that is suitable for the NAO framework. We perform systematic convergence tests and identify a set of 

8: computational parameters, which can serve as the default choice for most practical purposes. Benchmark calculations are carried out for a set of prototypical semiconductors

9: and insulators, and compared to independent reference values obtained from an independent \GnWn implementation based on linearized augmented plane waves (LAPW)

10: plus high-energy localized orbitals (HLOs) basis set, as well as experimental results. With a moderate (FHI-aims \textit{tier} 2) NAO basis set, our \GnWn calculations

11: produce band gaps that typically lie in between the standard LAPW and the

12: LAPW+HLO results. Complementing \textit{tier} 2 with highly localized 

13: Slater-type orbitals (STOs), we find that the obtained band gaps show an overall convergence 

14: towards the LAPW+HLO results. The algorithms and techniques developed in this work 

15: pave the way for efficient implementations of correlated methods within the NAO framework. 

16: \end{abstract}

17: