1: \begin{abstract}

2: 

3: We introduce an orbital dependent electron tunneling model and implement it within the atom superposition approach for simulating

4: scanning tunneling microscopy (STM) and spectroscopy (STS). Applying our method, we analyze the

5: convergence and the orbital contributions to the tunneling current and the corrugation of constant current STM images

6: above the W(110) surface. In accordance with a previous study [Heinze et al., Phys. Rev. B 58, 16432 (1998)],

7: we find atomic contrast reversal depending on the bias voltage.

8: Additionally, we analyze this effect depending on the tip-sample distance using different tip models, and

9: find two qualitatively different behaviors based on the tip orbital composition.

10: As an explanation, we highlight the role of the real space shape of the orbitals involved in the tunneling.

11: STM images calculated by our model agree well with Tersoff-Hamann and Bardeen results.

12: The computational efficiency of our model is remarkable as the k-point samplings of the surface and tip Brillouin zones

13: do not affect the computation time, in contrast to the Bardeen method.

14: 

15: \end{abstract}

16: