1: % Title: Mass Transfer Mechanism in Real Crystals by Pulsed Laser Irradiation
2: % Authors: A.E.Pogorelov, K.P.Ryaboshapka, A.F.Zhuravlyov
3: % Comments: 10 pages, Latex, 2 figures
4: % Subj-class: Material Science\\
5:
6: % The dynamic processes in the surface layers of metals subjected
7: % activity of a pulsing laser irradiation, which destroyed not the
8: % crystalline structure in details surveyed. The procedure of
9: % calculation of a dislocation density generated in bulk of metal
10: % during the relaxation processes and at repeated pulse laser
11: % action is presented. The results of evaluations coincide with
12: % high accuracy with transmission electron microscopy dates. The
13: % dislocation-interstitial mechanism of laser-stimulated
14: % mass-transfer in real crystals is presented on the basis of the
15: % ideas of the interaction of structure defects in dynamically
16: % deforming medium. The good compliance of theoretical and
17: % experimental results approves a defining role of the presented
18: % mechanism of mass transfer at pulse laser action on
19: % metals. The possible implementation this dislocation-interstitial
20: % mechanism of mass transfer in metals to other cases of pulsing
21: % influences is justified
22:
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41: \begin{document}
42:
43: \title{Mass Transfer Mechanism in Real Crystals by Pulsing Laser
44: Irradiation}
45:
46: \author{A.E.Pogorelov (a), K.P.Ryaboshapka (a)}
47: \address{(a) G.V.Kurdyumov Institute for Metal Physics of NAS of
48: Ukraine, 36 Vernadskii blrd., 03142 Kiev, Ukraine}
49:
50: \author{A.F.Zhuravlyov (b)}
51: \address{(b) Institute for Magnetism of the NAS of Ukraine,
52: 36-b Vernadskii blrd.,03142 Kiev, Ukraine} \email{(B)
53: zhur@imag.kiev.ua}
54:
55: \keywords{Laser influence; laser-stimulated mass transfer; pulse
56: laser; laser machining; lattice; metal surface; thermal stresses;
57: deformation; relaxation of stresses; structure defects;
58: interstitial atom; atom penetration; dislocation structure; atom
59: dragging by the dislocations; cellular structure}
60:
61: \date{\today}
62:
63: \begin{abstract}
64: The dynamic processes in the surface layers of metals subjected
65: activity of a pulsing laser irradiation, which destroyed not the
66: crystalline structure in details surveyed. The procedure of
67: calculation of a dislocation density generated in bulk of metal
68: during the relaxation processes and at repeated pulse laser
69: action is presented. The results of evaluations coincide with
70: high accuracy with transmission electron microscopy dates. The
71: dislocation-interstitial mechanism of laser-stimulated mass
72: transfer in real crystals is presented on the basis of the ideas
73: of the interaction of structure defects in dynamically deforming
74: medium. The good compliance of theoretical and experimental
75: results approves a defining role of the presented mechanism of
76: mass transfer at pulse laser action on metals. The possible
77: implementation this dislocation-interstitial mechanism of mass
78: transfer in metals to other cases of pulsing influences is
79: justified
80: \end{abstract}
81:
82: \maketitle
83:
84: \section{Introduction}
85:
86: It was appeared experimentally in the works \cite1-\cite3 that the
87: Q-switched laser pulses with power density $q_i=10^6\div 10^7
88: W/cm^2,$ pulse duration of $\tau=10\div 50 ns$ stimulate anomalous
89: deep atom penetration from irradiated metal surface to the depth
90: value of which is considerably more than thermal influence depth.
91: To interpret this phenomenon of high atomic mobility, a mechanism
92: of interstitial atom migration under the conditions of high-rate
93: strain was presented in \cite1. This mechanism cannot interpret
94: observed experimentally long-range mass transfer, because the
95: interstitial atoms are short-live defects, which quickly
96: eliminated on sinks. To escape this problem the authors of the
97: work \cite4 supposed interstitial atom dragging by the
98: dislocations, which were moving by the thermal stresses. In this
99: case lifetime of the complex {\it "dislocation+interstitial atom"}
100: was sufficient for right estimations of the penetration depth.
101: Thermal stresses were calculated using the exact solution \cite5
102: of the thermal conductivity problem in the laser-influenced metal.
103: The calculations show a possibility of generation of the
104: dislocations during a relaxation of the deformations in the
105: metal. The deformation processes during the laser actions were
106: confirmed by the presence of topographical curving structure and
107: formation of polygonal grids in crystalline $Mo$ \cite6, and
108: cellular dislocation structures in $Armco-Fe$ \cite7. Dislocation
109: structure analysis, which was performed with the data presented
110: in the work \cite8, has evidenced the possibility of generating
111: large amount of point defects of interstitial type under these
112: conditions. Model calculations, which were performed in the work
113: \cite4, show the dynamical state of the laser-influenced metal.
114: This state is stipulated by the moving of the gradients of thermal
115: rapid-changed stresses from the skin layer into the bulk of the
116: metal. These stresses cause the compressing waves, even under
117: special conditions shock wave forming, and penetration in
118: considerable depth of laser-influenced metals. The formation of
119: polygonal grids in $Mo$ \cite6, and cellular dislocation
120: structures in $Armco-Fe$ \cite7 demonstrate the interaction
121: between dynamic stresses and dislocations, which are transferred
122: in dynamically deformed lattice.
123:
124: In the present work we discuss the problem of the creation,
125: annihilation, and lifetime of the {\it "dislocation+interstitial
126: atom"} complex in the frame of the dislocation-interstitial
127: mechanism in the metals, which are influenced by pulsing laser
128: irradiation. The results permit correct interpretation of
129: anomalous deep atom penetration from the laser-affected surface
130: to the bulk of the metal on distances of tens of micrometers.
131:
132: \section{Basic relations}
133:
134: Pulsing laser heating of the near-to-surface layers of metals
135: stipulates the rapid thermal expansion of these layers. Heat
136: velocity is connected with the velocity of the temperature change
137: with the time $t:$
138: $$
139: \partial_t T\approx 10^6\div 10^{10} K/s$$
140: which, in turn, depends on the duration of the laser pulse. It
141: was shown in the work \cite9, that in the case of duration of
142: laser pulse $\tau\approx 10^{-10} s$ the stress fields in the
143: influenced metal one can describe to solve the dynamic
144: thermal-elasticity equations \cite{10} in the quasi-stationary
145: approach \cite{11}.
146:
147: The temperature $T(r,\phi ,z,t)$ in bulk of the metal ($z>0$),
148: which is irradiated by the laser beam with the width $\beta,$
149: intensity $I_0 ,$ duration $\tau ,$ and skin layer $\kappa,$ is
150: described by the equation \cite{5}:
151:
152: \begin{eqnarray}\label{D33.7} \nonumber
153: \partial_t T-a\Delta T=I_0 e^{-\beta r^2 -\kappa z} \left\{
154: \begin{array}{cc}
155: 1,&{\rm if}\; t\leq \tau , \\ 0,&{\rm if}\; t>\tau ,
156: \end{array} \right.
157: \end{eqnarray}
158: with boundary conditions:
159: $$
160: (\partial _z T)_{z=0}=hT(r,0,t).$$ Here $a$ is thermal
161: conductivity coefficient; $I_0$ is defined as
162: $$\frac{q_0}{k}a\eta ,$$ where $q_0$ is the power of irradiation,
163: $\eta$ is the absorption coefficient, $k$ is thermal capacity
164: coefficient; $h$ describes the heat flow absorbing; $\Delta$ is
165: the Laplasian. We omit below coordinate $\phi$ due to the
166: cylindrical symmetry of the considered problem.
167:
168: Exact solution of this problem is:
169:
170: \begin{eqnarray}\label{TF}
171: T(r,z,t)&=&\frac{I_0}{2\beta}\int\limits_0^{\infty}\xi J_0 (\xi
172: r)e^{-\frac{\xi^2}{4\beta}}\lbrace F(\xi ,t)- \nonumber \\ &-&
173: \left\{\begin{array}{cc} 0,&{\rm if}\quad t\leq\tau \\ F(\xi
174: ,t-\tau ),&{\rm if}\quad t>\tau
175: \end{array}\right\} d\xi .
176: \end{eqnarray}
177: where
178: \begin{eqnarray}\label{F}
179: F(\xi ,t)&=&\frac{1}{a(\kappa^2 -\xi^2)}\lbrace e^{-\kappa
180: z}(e^{a(\kappa^2 -\xi^2 )t}-1)+ \nonumber \\ &+&(h+\kappa
181: )\left[\frac{e^{-\xi z}}{2(h+\xi )}{\rm
182: erfc}\left(\frac{z}{2\sqrt{at}}-\xi\sqrt{at}\right)\right.
183: \nonumber \\ &-&\frac{e^{\xi z}}{2(\xi -h)}{\rm
184: erfc}\left(\frac{z}{2\sqrt{at}}+\xi\sqrt{at}\right)- \nonumber \\
185: &-&\frac{1}{2}e^{a(\kappa^2 -\xi^2 )t}\left(\frac{e^{-\kappa
186: z}}{\kappa +h}{\rm
187: erfc}\left(\frac{z}{2\sqrt{at}}-\kappa\sqrt{at}\right)\right.
188: \nonumber \\ &-&\frac{e^{\kappa z}}{\kappa -h}{\rm
189: erfc}\left.\left(\frac{z}{2\sqrt{at}}+\kappa\sqrt{at}\right)\right)
190: + \nonumber \\ &+&\frac{h(\kappa^2 -\xi^2 )}{(\xi^2 -h^2
191: )(\kappa^2 -h^2 )}e^{zh+a(h^2 -\xi^2 )t}\times \nonumber \\
192: &\times&\left.\left.{\rm
193: erfc}\left(\frac{z}{2\sqrt{at}}+h\sqrt{at} \right)\right]\right\}
194: .
195: \end{eqnarray}
196:
197: The solution \eqref{TF} of this problem reveal the maximum of the
198: axis component of thermal-elastic stresses $\sigma_{zz}(0,z,t)$
199: \cite{12}. This maximum is formed at the depth of the metal to
200: the end of laser pulse. The value of the maximum, and the value
201: $z_0$ depends on the parameters of laser irradiation, and the
202: physical properties of irradiated metal. The value of the maximum
203: reach the extremum and it position approach to the surface when
204: the exposure time is decreased \cite{12}. On the surface $z=0$
205: axis component $\sigma_{zz}(0,0,t) = 0.$ It appears because
206: replacement of the surface in $z-$up-direction results in a
207: relaxation of axis stresses. In-plane replacements cause at the
208: irradiated surface $z=0$ radial-symmetric stresses
209: $\sigma_{rr},\sigma_{\phi\phi}$ \cite9, which are maximal at the
210: surface \cite{13} and depend on the depth $z$ as \cite9:
211: \[\sigma_{rr}=-\frac{E}{1-\nu}\alpha\nabla T(r,z,t),\]
212: where $\alpha$ is the thermal expansion coefficient; $E$ is the
213: Young's module; $\nu$ is the Poisson's coefficient.
214:
215: As it was shown in \cite{12}, stresses, which appeared in
216: laser-irradiated metal, cause a deformation of a lattice. A
217: process of the creation of the dislocations will begin in the
218: volume, which deformation value is more than critical one,
219: exactly, the yield stress. These areas of deformed bulk of a metal
220: are determined by the temperature inhomogeneity Eq.\eqref{TF}
221: \cite5. The processes of the creation of the dislocations are
222: developed due to an action of the different nature sources,
223: usually in combination.
224:
225: Stretched area will appear near the center $(r=0)$ of the laser
226: spot on the surface $(z=0)$ of the irradiated metal, and the
227: compressed area will form at some distance from the center of
228: laser spot. Calculated stresses \cite{12}, which correspond this
229: influence, are shown on the Fig.\ref{F1}.
230:
231: \begin{figure}
232: \hspace{1cm} \psfig{figure=fig1.eps,width=8cm,height=5cm}
233: \caption{Stresses on the surface of a metal, irradiated by a
234: pulsing laser beam with the spot radius $r_f$} \label{F1}
235: \end{figure}
236:
237: New generated, and existent in a bulk of the metal, dislocations
238: are influenced by the inhomogeneous thermal-elastic stresses. As
239: a result, effective forces, which appears due to the action of
240: the inhomogeneous thermal-elastic stresses, cause the
241: displacements of the part of dislocation or whole piled up
242: dislocation group, which, in turn cause the plastic deformation of
243: the near-to-surface areas of the laser-influenced metal. The
244: transmission electronic microscopy data show \cite{7}, that the
245: formation of the cellular structure is the result of the creation,
246: accumulation, redistribution, of the dislocations, on which the
247: number of the kinks is considerably increased. This formation
248: depends on the number of the laser shots. Observed experimentally
249: increasing of the dislocation loops is connected with the
250: generation of the point defects under described influences.
251:
252: A motion of the dislocations and its interactions also cause the
253: generation of point defects \cite4. A type of generated defect,
254: namely, a vacancy or an interstitial atom, depends on as the
255: dislocation interaction mechanism \cite{14}, \cite{15}, as the
256: deformation velocity \cite{16}. Generated vacancies and
257: interstitial atoms are considerably non-equilibrium defects.
258: These defects tend to annihilate and disappear in different sorts
259: of the sinks, such, for example, as the dislocations, a surface,
260: grain boundaries \cite{17}.
261:
262: \section{Calculations and estimations}
263:
264: As it was admitted above, appeared in pulse laser influenced
265: near-to-surface layers of a metal thermal gradient cause the
266: thermal stresses. A relaxation of these stresses is realized by
267: the generation of moving dislocations during the time when the
268: value of these stresses is more than value of a yield stress
269: \cite5. Therefore one has taken into account an increasing of the
270: number of dislocations during as the thermal stresses relaxation
271: time, as a many-fold action. The analysis in \cite{12} shows,
272: that the deformation due to the pulse laser irradiation of a
273: metal is local deformation. A half-width of deformation curve is
274: greater than a half-width of the laser beam in the case of large
275: values of $\tau ,$ and difference between these half-widths tends
276: to zero when $\tau$ is decreased. It is clear, that the defect
277: distribution will correlate with these tendencies. As it follows
278: from the results of the works \cite5, \cite9, $z-$axis component
279: of the density of the dislocations in a metal after laser
280: irradiation is:
281: \begin{equation}\label{2}
282: \rho_{i+1} =\rho_i-\frac{2\alpha}{(1-\nu )b}\int\limits^n_1
283: \nabla T(0,z,\lambda t)d\lambda ,
284: \end{equation}
285: where $i$ is the number of laser shots ($i=0,1,...$); $b$ is the
286: value of B\"urger's vector of a dislocation; $\rho_0$ is the
287: initial density of dislocations; by the factor $n$ we take into
288: account the processes, which delay a creation of dislocations by
289: thermal stresses. Calculation of the dislocation density
290: Eq.\eqref{2} was carried out for the case of $Armco-Fe$ influenced
291: by Q-switched laser pulse with $q_o=10^7 W/cm^2 ; \tau =50ns;
292: r{_f}=0.2cm.$ Results of these calculations at $h=0$ are shown on
293: the Fig.\ref{F2} (continuous line). Experimental data are shown on
294: the Fig.\ref{F2} also. Experimental points were obtained in \cite7
295: by a measuring of the density of dislocations by the method of
296: electron microscopy in $Armco-Fe$ sample, which was laser
297: irradiated. Calculations were made in supposition of gathering of
298: the dislocations during relaxation processes. Best correlation of
299: the calculation and experimental data was achieved at the
300: relaxation time of order $1.6\mu s.$ Therefore we took this time
301: as a time of dissipation of the energy, which was pumped by a
302: laser irradiation into the metal. During this time a generation
303: and motion of the dislocations are ended.
304: \begin{figure}
305: \hspace{1cm} \psfig{figure=fig2.eps,width=8cm,height=5cm}
306: \caption{Dislocation density in laser irradiated $Armco-Fe.$
307: Experimental points are obtained at Q-switched laser pulse
308: duration $\tau =5\times 10^{-8} s.$} \label{F2}
309: \end{figure}
310: Small discrepancy between exact solution Eq.\eqref{TF} and real
311: experimental data one can see in a decreasing part of the curve
312: Fig.\ref{F2}. This discrepancy occurs due to the volume stresses
313: $\sigma_{rr}$ and $\sigma_{\phi\phi},$ values of which may be
314: large enough to create additional notable append to the
315: dislocation density. We have taken into account also a result of
316: non-linear depth dependence of a dislocation creation process,
317: which is facilitated in the less-defective bulk metal region.
318: Interstitial atoms and vacancies are created during a plastic
319: deformation of the metal. The difference of its creation energies
320: in a deformed crystal is not determining factor for concentration
321: ratio of these point defects \cite{18}. You have taken into
322: account a dynamics of a dislocation interaction, i.e. it velocity
323: $V$, stresses $\sigma$ parameters (deformation value
324: $\varepsilon$, velocity $\dot{\varepsilon}.$) Moving skew
325: dislocations create interstitial atoms. The velocities of these
326: dislocations are greater than critical velocity when the stresses
327: exceed its critical value \cite{19}. It appears on the early
328: stages of crystal deforming, when the density of the dislocations
329: is low, and number of the steps, which create interstitial atoms,
330: exceeds not the number of the steps, which create vacancies
331: \cite{16}. Point defects in crystals are less movable than the
332: dislocations \cite{19}. Transfer of the dislocations under
333: influence of the internal or external forces may results in mass
334: transfer. Authors of the work \cite{20} supposed, that this mass
335: transfer is a result of interaction of moving dislocations and
336: interstitial atoms. Temperature dependence of a preference
337: parameter for dislocations was calculated in the work \cite{21}.
338: It was shown, that in the temperature interval $400-900 K$
339: interstitial atoms appear in the dislocation core, and vacancies
340: are in its atmosphere. It is clear, that in the case of the edge
341: dislocation, the space under the dislocation line is preferable
342: for interstitial atom position. When this dislocation will move in
343: the stresses field along it glide line, the interstitial atom will
344: move with dislocation in the place of energy minimum. This atom
345: transfer will take place until the realization of another, more
346: energetically preferable situation will realized.
347:
348: First, atom annihilate on the sink. This case is trivial and we
349: will not consider it here.
350:
351: Second, in the case, when the value of the stresses exceeds the
352: value of Pierl's stress, the non-activated motion of the
353: dislocations is possible. The velocities of this motion may be
354: near the sound velocity \cite{22}. At the some critical velocity
355: value $V_c$ dislocation may loose the atom. Let us estimate this
356: velocity. We suppose, that a complex {\it "dislocation +
357: interstitial atom"} will be exist until it kinetic energy is less
358: than the link energy of the interstitial atom with the
359: dislocation. We can write:
360: \begin{equation}\label{3}
361: \frac{1}{2}MV_c^2\geq W,
362: \end{equation}
363: where M = m* + m, m is the atom mass; m* is the dislocation
364: effective mass, which is determined as [19]:
365: \begin{equation}\label{4}
366: m*=m\frac{2d}{l},
367: \end{equation}
368: where $d$ is the distance between glide planes; $l$ is the
369: half-width of a dislocation: $$l=\frac{d(3-2\nu )}{4(1-\nu )}.$$
370: Hence we get:
371: \begin{equation}\label{5}
372: V_c =\sqrt{\frac{2W(3-2\nu )}{m(11-10\nu )}}.
373: \end{equation}
374: In the case of the $Armco-Fe$: $W = 0.2\div 0.5 eV$ \cite{23};
375: $\nu=0.28; m = 1.66\times 10^{-24}M_{Fe}=9.27\times 10^{-23}g,$
376: and
377: $$V_c=(450\div 716)\times 10^2 cm/s$$
378:
379: Now it is easy to see, that in the case of free motion with the
380: velocity $V_c$ during the time $t_M=1.6\times 10^{-6}s$
381: (relaxation time) complex {\it "dislocation + interstitial atom"}
382: will be on the distance of $720\div 1146 \mu m.$ Experimentally
383: measured depth of the atom penetration from initial layer of
384: $1\mu m$ is in order of $10\mu m$ \cite1, \cite2 (at Q-switched
385: laser pulse duration $\tau =3\times 10^{-8} s$), which is
386: considerably less than the above mentioned distance. This
387: difference is caused by an interaction of the dislocations with
388: different defects during a motion through the real crystal. A
389: dissipation of the complex energy results in a decreasing of the
390: velocity of the complex. The defects, which cause energy
391: dissipation in real crystals, are other dislocations, point
392: defects, disperse constituents of other phase, etc. \cite{19}. To
393: estimate these losses let us consider the motion of the complex
394: {\it "dislocation + interstitial atom"}, which mass is $M,$ under
395: the influence of the stresses forces $F = f(\sigma ),$ in the
396: media with the damping coefficient $\gamma .$
397:
398: During a laser pulse ($t\leq\tau$) motion equation
399: \begin{equation}
400: \label{6} d_t V_1=\frac{F}{M}-\frac{\gamma}{M}V_1
401: \end{equation}
402: solution is:
403: \begin{equation}
404: \label{7} V_1=\frac{F}{\gamma}(1-\exp\{-\frac{\gamma t}{M}\}),
405: \end{equation}
406: which presents maximum velocity
407: \begin{equation}
408: \label{8} V_{max} =\frac{F}{\gamma}(1-\exp\{-\frac{\gamma
409: \tau}{M}\}).
410: \end{equation}
411:
412: When the stresses are not influence the motion under consideration,
413: in other words, when the laser pulse is ended, a complex {\it
414: "dislocation + interstitial atom"} reaches the maximal value of the
415: velocity, which is described by the equation
416: \begin{equation}
417: \label{9} d_t V_{2}=-\frac{\gamma}{M}V_2 ,
418: \end{equation}
419: which solution is
420: \begin{equation}
421: \label{10} V_2=V_{max}\exp\{\frac{\gamma}{M}(\tau -t)\}.
422: \end{equation}
423:
424: Averaging of the given solutions over the relaxation time $t_M$
425: $$<V> =\frac{1}{t_M}\int V(t)dt$$
426: gives
427: \begin{equation}
428: \label{12} <V>=\frac{F}{\gamma t_M}\{\tau
429: +\frac{M}{\gamma}[1-\exp\{\frac{\gamma
430: \tau}{M}\}]\exp\{-\frac{\gamma t_M}{M}\}\}
431: \end{equation}
432:
433: In the case of large values of $\gamma$
434: $$<V> \approx\frac{F\tau}{\gamma t_M},$$
435: and a ratio
436: \begin{equation}
437: \label{13} \frac{<V>}{V^{(0)}_{max}}\approx\frac{\tau}{t_M}\approx
438: 0.02.
439: \end{equation}
440: Here $$V^{(0)}_{max}\equiv\frac{F}{\gamma}.$$
441:
442: Taking into account given ratio, and putting $V^{(0)}_{max}=V_c ,$
443: we can get for a real depth of surface atoms mass transfer the
444: value $$z = <V>t_M \approx V_c\tau\sim 14\div 22\mu m.$$
445:
446: {\it "Dislocation + interstitial"} complex will accelerate to the
447: velocity of the order $V_c$ at the initial period of a laser
448: influence, i.e. at the times $\tau /2$ (if the Q-switched laser
449: pulse form is near to triangle). It gives complex decomposition
450: depth $\sim 7\div 11 \mu m,$ which is in a good agreement with the
451: experimental data. Better correlation is achieved by taking into
452: account the possibility of the annihilation of the dislocations.
453: The dislocation annihilation takes place when the opposite sign
454: dislocations collide in the process of the motion in parallel
455: glide planes \cite{15}. Simplest annihilation realized for the
456: dislocations with a free core. In the case of the {\it
457: "dislocation+interstitial atom"} complex annihilation is
458: low-possible because interstitial atoms in the core of dislocation
459: enable this effect. For an edge dislocation another velocity
460: decreasing factors may be the delay of the kinks on the steps of a
461: dislocation, and on the vacancies, which are situated on the edge
462: of the extra plane.
463:
464: We have admit, that the tagged atoms (radioactive isotopes of $Fe$) are
465: concentrated in smooth near-to surface layer of experimentally investigated
466: samples. Therefore the ratio of penetration depth of tagged atoms to whole
467: depth of high dislocation concentration is proportional to initial ratio
468: of value of tagged atoms layer and value of influenced thickness of a sample.
469:
470: We can estimate the depth of vacancy atmosphere loosing by a
471: dislocation, using the Eqs. \eqref{5}, and \eqref{13}. These
472: events will be realized on the depth $\sim 3\mu m$ if we put the
473: {\it "vacancy+edge dislocation"} binding energy value equal to
474: $0.04eV$ \cite{23}. It is clear, that binding energy {\it
475: "dislocation + interstitial atom"} exceeds the binding energy {\it
476: "dislocation + vacancy"}, therefore during the motion of complexes
477: with the velocities, values of which are more than the critical
478: value, the dislocations loose first of all the vacancy atmosphere
479: and then the interstitial atoms, which are bounded to the core of
480: the dislocations. This difference in the behavior of the vacancies
481: and interstitials is thermal activated and realizes in the
482: considered temperature interval. Calculated in \cite5 temperatures
483: in the metal, which was influenced by pulsing laser irradiation,
484: are in good agreement with this idea. Calculations in \cite5 and
485: experimental data in \cite{24} show that temperature influence of
486: the laser beam during nano-second reaches the depths in order of
487: $\mu m.$ As a result the concentration of the vacancies in the
488: near-to-surface layers are much than the concentration of the
489: interstitials and vise versa in deepest layers \cite4 .
490:
491: \section{Discussion}
492:
493: Non monotonous dependencies of the distribution of tagged atoms
494: under surface of pulse laser irradiated metal are in good agreement
495: with the calculations, which were carried out on the base of a
496: concept of the presented above mechanism of capturing and transport
497: of the point defects by the dislocations, which are generated and
498: moving by the thermal fields, which appeared in surface layer of
499: irradiated metal.
500:
501: The kinetic of a gathering of the tagged atoms
502: $^{55}Fe$+$^{59}Fe,$ which were penetrated from the surface to
503: bulk of a metal, which was influenced by many-fold pulse laser
504: irradiation ($\tau\sim 10^{-8}s, W\approx 0.02 J,$) was
505: investigated in $Armco-Fe$ \cite{25}, \cite{25a}. A maximum of the
506: concentration of radioactive atoms $^{55}Fe+^{59}Fe$ began to be
507: formed after the first three cycles of an irradiation. It
508: correlates with $X$-ray and electron microscopy data, which shows
509: maximal increase of defects in a metal after the first cycles of
510: pulse laser influence. A displacement of the defect concentration
511: maximum to the depth of the irradiated sample was observed
512: simultaneously with the forming of the maximum. These processes
513: saturation are observed at the number of laser shots $\sim 10.$
514: At this time an increasing of the dislocation density in
515: $Armco-Fe$ was ended, and new dislocations were gathered into
516: cellular structure, as it was shown by the electron microscopy
517: experimental data \cite7 .
518:
519: Effective diffusion coefficients $D^*_i$ were obtained from the
520: analysis of the tagged atoms concentration experimental data,
521: which were measured in the influenced by pulsing many-fold laser
522: irradiation areas of $Armco-Fe.$ The value of $D^*_i$ is monotony
523: decreased with the number of laser shot $i$ \cite{24}. This effect
524: is caused by an increasing of the number of the defects, which are
525: created by laser influence. It results in the effective slowing
526: of the motion of the complexes {\it dislocation + interstitial
527: atom}. A value of $D^*_i$ is decreased not so fast after $5\div
528: 8$ shots. This slowing is connected with a beginning of the
529: process of effective redistribution of the radioactive isotope
530: \cite7 .
531:
532: We can describe the experimental data of the works \cite1, \cite2
533: from the positions of the presented above {\it dislocation +
534: interstitial} mechanism taking into account the data of the work
535: \cite{26}. Compression wave appears in the metal during the time
536: of influence of pulsing laser irradiation. Stresses wave slope is
537: increased during this laser influence on a metal. A number of
538: defects of crystalline lattice is increased due to appearance of
539: the inhomogeneous stresses as a result of laser influence. New
540: defects may be the sinks for migrating from the surface
541: interstitials. Tagged atoms concentration is maximal on the depth
542: $z_0\geq\sqrt{a\tau},$ which coincides with the depth of maximum
543: of thermal stresses at the moment of the end of laser pulse. The
544: number of sinks is decreased with the depth because the distance
545: to the source of the stresses increased, and amplitude of the
546: stresses is decreased. Each next laser pulse pumps radioactive
547: isotopes from the near-to-surface layers to the bulk of the
548: metal, and increases the number of sinks for interstitials. It is
549: reflected on the slopes decreasing of the exponential parts of
550: tagged atom concentration curves as a function of $i$ \cite2.
551: Hence a decrease of the value of $D^*$ is slowing.
552:
553: Presented above phenomenological description of the
554: laser-stimulated {\it dislocation + interstitial} mass transfer
555: process in $Armco-Fe$ is confirmed by the experimental data of
556: the investigation of self atom transport in $Ni$ \cite{27}. It
557: appeared, that increasing of the vacancy number slowing mass
558: transfer. This phenomenon is not possible to explain in the frame
559: of the vacancy mechanism because an increasing of the number of
560: the vacancies facilitates a diffusion of the atoms in a
561: crystalline lattice. Observed phenomenon is explained easy by the
562: {\it dislocation + interstitial} mechanism of a pulse influenced
563: mass transfer. At the beginning of a mass transfer migrating
564: interstitials are high movable and interact not practically with
565: the vacancies, which are traps for its. Loosing of a kinetic
566: energy by the interstitials makes its more suitable for vacancy
567: trapping, by the other words a recombination probability
568: increase. This recombination reflects a mass transfer last
569: stadium, which is characterized by exponential dropping parts of
570: the concentration curves.
571:
572: Presented above estimations and analysis show the nature of
573: pulsing laser stimulated mass transfer in metals. This mass
574: transfer is carried out by the near-to surface layers
575: interstitials, which interact with the moving dislocations during
576: the laser influence and relaxation of stressed state of a
577: crystalline lattice. Taking into account that the stressed state
578: relaxation processes are common for the all pulsing influences
579: \cite{28}, which not destroy the structure of an influenced
580: metal, we can state an universality of the presented mass transfer
581: mechanism.
582:
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689: \end{document}
690: