1: \documentclass[twocolumn,showpacs,preprintnumbers,amsmath,amssymb]{revtex4}
2: %\documentclass[preprint,showpacs,preprintnumbers,amsmath,amssymb]{revtex4}
3:
4: %\documentclass[preprint,aps]{revtex4}
5: %\documentclass[preprint,aps,draft]{revtex4}
6: %\documentclass[prb]{revtex4}% Physical Review B
7:
8: \usepackage{graphicx}
9: \usepackage{dcolumn}
10: \usepackage{bm}% bold math
11:
12: \newcommand{\AsGa}{{\ensuremath{\mathrm{As_{Ga}}\,}}}
13: \newcommand{\Asi}{{\ensuremath{\mathrm{As_{i}}\,}}}
14: \newcommand{\VGa}{{\ensuremath{\mathrm{V_{Ga}}\,}}}
15: \newcommand{\ELt}{{\ensuremath{\mathrm{EL2^{0}}\,}}}
16: \newcommand{\ELts}{{\ensuremath{\mathrm{EL2^{*}}\,}}}
17: \newcommand{\Ctv}{{\ensuremath{\mathrm{C_{3v}}\,}}}
18: \newcommand{\Td}{{\ensuremath{\mathrm{T_d}\,}}}
19: \newcommand{\lDOS}{$\ell$DOS}
20:
21: \begin{document}
22:
23: \title{The electronic structure around As antisite near (110) surface of GaAs}
24:
25: \author{Yusuke Iguchi}
26: \author{Takeo Fujiwara}
27: \author{Akira Hida}
28: \author{Koji Maeda}
29: \affiliation{Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan}
30:
31: \date{\today}
32: %======================================================================%
33: % Abstract %
34: %======================================================================%
35: \begin{abstract}
36: The electronic structure around a single As antisite in GaAs
37: is investigated in bulk and near the surface
38: both in the stable and the metastable atomic configurations.
39: %
40: The most characteristic electronic structures of As antisite
41: is the existence of the localized p-orbitals
42: extending from the As antisite.
43: %
44: The major component of the highest occupied state on As antisite
45: in the stable configuration
46: is s-orbital connecting with neighboring As atoms with nodes
47: whereas that in the metastable configuration
48: is p-orbital connecting without nodes.
49: %
50: Localized p-orbitals on the surrounding As atoms around the As antisite
51: exist in every configuration of As antisite.
52: Such features are retained except
53: the case of the As antisite located just in the surface layer
54: in which the midgap level is smeared into the conduction band
55: and no localized states exist near the top of the valence band.
56: %
57: Scanning tunneling microscopic images of defects observed
58: in low-temperature grown GaAs, possibly assigned as As antisite,
59: the origin of the metastability,
60: and the peculiarity of the defects
61: in the surface layer are discussed.
62: \end{abstract}
63:
64: \pacs{73.20.Hb, 61.72.Ji, 68.37.Ef, 71.55.-i}
65: %\keywords{EL2 STM}
66: \maketitle
67:
68:
69:
70:
71: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
72: % Introduction %
73: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
74: \section{\label{sec:introduction}Introduction}
75: Bulk GaAs crystals grown under As-rich conditions are known
76: to contain As-related defects called EL2 centers \cite{kaminska1993}
77: that form a deep double donor level at the middle of the band gap.
78: %
79: The EL2 centers compensate residual shallow acceptors
80: thus giving the crystals a semi-insulating property useful
81: for device applications.
82: %
83: The EL2 centers induce a characteristic optical absorption
84: extending to the sub-band gap region with a spectral hump
85: peaking around 1.2 eV.
86: %
87: The most peculiar feature of the EL2 centers is
88: the photoquenching effect
89: in which the EL2-originated optical absorption becomes diminished
90: when the crystal is optically illuminated
91: with an intra-center excitation
92: at low temperatures.~\cite{martin1981}
93: %
94: The centers once quenched are, however, recovered
95: if the crystal is heated or illuminated
96: with a different infrared light.~\cite{fischer1987}
97: %
98: This reversibility and the lost of the effect at high temperatures
99: indicate that the EL2 centers, when they are electrically neutral,
100: are transformable between the stable (\ELt)
101: and the metastable (\ELts) state.
102:
103:
104:
105:
106: For the atomic structure of EL2 centers,
107: the most commonly accepted model is isolated arsenic antisite defects
108: (\AsGa).
109: %
110: First principle calculations \cite{chadi1988, dabrowski1988}
111: based on the \AsGa model showed
112: that the metastable \ELts may be a close pair of
113: an interstitial arsenic (\Asi) and a gallium vacancy (\VGa)
114: that is formed by the displacement of the antisite As atom
115: from the lattice point
116: to a puckered interstitial position in a [111] direction
117: leaving a \VGa\ behind.
118: %
119: The point symmetry lowering from \Td to \Ctv
120: by the displacement
121: was supported by optical absorption experiment.~\cite{trautman1992}
122: %
123: However, the atomic structure of \ELt and \ELts
124: have been controversial since some defects,
125: though exhibiting features of EL2 centers,
126: were found to show no photoquenching effect.~\cite{omling1986, manasreh1990}
127: %
128: The presence of such variations in EL2-like centers arose
129: an argument that the EL2 centers form a `family'
130: including various structures rather
131: than have a unique atomic configuration.~\cite{taniguchi1983}
132:
133:
134:
135:
136: Low-temperature grown (LT-) GaAs crystals
137: homoepitaxially grown under an excess As pressure
138: contain a high density of As-related defects.
139: %
140: Feenstra and his coworkers~\cite{feenstra1993} applied
141: scanning tunneling microscopy (STM)
142: to atomic level observations of
143: individual point defects abundantly found in LT-GaAs epifilms.
144: %
145: Four different defect contrasts observed in different sizes
146: were attributed to \AsGa atoms located in different depths
147: from the sample surface.
148: %
149: Recently, some of the present authors \cite{hida2001} provided
150: direct evidence for the defect being EL2:
151: %
152: They found that the STM contrasts of the defects in LT-GaAs
153: samples kept at a low temperature (90K)
154: are drastically changed by light illumination with an excitation
155: spectrum nearly identical to that
156: for the photoquenching effect of EL2 centers
157: in bulk crystal.
158: %
159: The local density of states (\lDOS) measured
160: by scanning tunneling spectroscopy (STS)
161: at the defect sites shows
162: that the donor gap state present in the normal state
163: disappears in the metastable state,
164: conforming the characteristics of EL2.
165:
166:
167: Theoretically simulated STM images of \AsGa defects
168: show an apparently good agreement with experimental images
169: as far as the defects
170: in the second largest contrast~\cite{feenstra1993}
171: are concerned.~\cite{capaz1995, zhang1999}
172: %
173: However, no systematic comparison has been made
174: for the STM image contrasts in other sizes
175: and those in the metastable state. \cite{footnote1}
176:
177:
178:
179: In this paper, we will report results
180: of first principle electronic structure calculations
181: of an \AsGa in GaAs bulk crystal
182: and those near the surface, both in the stable and the metastable state.
183: %
184: The main aim of the present study is to answer a na{\" \i}ve question
185: if defects near the surface that can be probed by STM
186: may be substantially different or not in the structures
187: and physical properties from the defects in the bulk crystals.
188: %
189: In Sec.~\ref{sec:comp}, we describe the methods of calculations
190: based on the atomic structure models.
191: %
192: In Sec.~\ref{sec:elec}, we show the electronic structures
193: of the highest occupied level in real space
194: and discuss the nature of the level which differs depending
195: on the depth of the \AsGa from the surface.
196: %
197: Section \ref{sec:discussion} is devoted to a comparison
198: between the simulated STM images and experimental ones
199: and discussions about the effects of surface
200: on the properties of \AsGa centers in light
201: of the calculated electronic structures.
202: %
203: In Sec.~\ref{sec:conclusion}, we conclude this paper.
204:
205:
206: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
207: % Computational Details %
208: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
209: \section{\label{sec:comp} Computational Details}
210:
211: Since a considerable lattice expansion is present
212: around \AsGa\ defects
213: due to the antibonding nature of
214: the double donor level in the band gap, \cite{bonapasta2000}
215: it is needed to calculate the electronic structure
216: allowing lattice relaxation with sufficient accuracy.
217: %
218: For this purpose, we used the density-functional (DFT) theory
219: with the local-density approximation (LDA) employing
220: two different methods for electronic structure calculations.
221: %
222: One is the method using
223: the norm-conserving pseudopotential of the Troullier-Martin type
224: with the plane wave basis set \cite{troullier1991}
225: and the other is the tight-binding Linear Muffin-Tin Orbital (LMTO) method.
226: \cite{andersen1984}
227:
228:
229:
230:
231: In the case of the norm-conserving pseudopotential of
232: the Troullier-Martin type,
233: we adopt a supercell and
234: the cut-off energy for the plane wave basis was set to be 10~Rydberg.
235: %
236: The ${\bf k}$-point sampling in the Brillouin zone
237: was done only at the $\Gamma$ point.
238: %
239: %By the norm-conserving pseudopotential method with plane wave bases,
240: %one can calculate the forces
241: %acting on atoms easily so that this method
242: %is often used for molecular dynamics,
243: %phonon or lattice relaxation calculations.
244: %
245: We relaxed atomic positions,
246: and calculated the electron density with the plane wave basis.
247:
248:
249:
250:
251: The LMTO basis is localized around each atom
252: and hence we can analyze the contribution of the atomic orbital
253: to a specific energy state in concern.
254: %
255: The LMTO basis set is minimal
256: and each basis function can be described
257: by a small number of parameters
258: so that we can perform calculations
259: with relatively small memory and computing time.
260:
261:
262:
263:
264: The procedure for calculating the electronic structures
265: in the model system that is bounded with a surface and contains
266: an \AsGa defect is as follows:\\
267: %
268: (1) Relaxing a relatively small lattice system with an \AsGa
269: and a surface by the pseudopotential method.\\
270: %
271: (2) Embedding the relaxed small system in a larger perfect lattice
272: with the atomic configuration around the \AsGa unchanged.\\
273: %
274: (3) Calculating the electron density with $\Gamma$ point
275: in a supercell by the pseudopotential method, and other properties
276: such as the $E - {\bf k}$ relation,
277: the total density of states (DOS) and local density of states
278: (\lDOS) of each atom by the tight-binding LMTO method.
279:
280:
281:
282: For \AsGa\ defects in bulk crystals,
283: we introduced an \AsGa\ defect by replacing a Ga atom
284: with an As atom in a $2\times 2\times 2$
285: cubic unit cells containing 64 atoms.
286: %
287: These atoms were then subject to relaxation
288: by means of the molecular dynamics with plane wave bases.
289: %
290: The lattice constant was fixed to the experimental value 5.654 \AA\
291: during the relaxation.
292: %
293: We found that the distances between the \AsGa and the neighboring atoms
294: after relaxation are similar
295: to the previous results. \cite{kaxiras1989, bonapasta2000}
296:
297:
298:
299: For calculations of the defect structure in the metastable state,
300: we first displaced the \AsGa atom tentatively by 1.2~\AA\
301: from the lattice point to a puckered interstitial position
302: along a bond breaking [111] direction,
303: and then relaxed the lattice
304: by means of the molecular dynamics with plane wave bases.
305: %
306: The resultant distance after the relaxation
307: between \Asi and a neighboring As atom
308: on the axis of the symmetry \Ctv
309: was 1.37~\AA,
310: a little larger than
311: the previous values.~\cite{chadi1988, dabrowski1988, dabrowski1989}
312: %
313: The electron density were calculated
314: for the perfect lattice of this size (64 atoms) and for lattices
315: in an extended size of $4 \times 2\sqrt{2} \times 3/\sqrt{2}$ (192 atoms)
316: in which we embedded a relaxed $2 \times 2 \times 2$ supercell
317: containing an \AsGa or an \Asi-\VGa\ pair.
318: %
319: In these calculations, we fixed the atoms
320: beyond the third neighbors at the perfect lattice positions.
321:
322:
323: %___________________________________________________
324: \begin{figure}
325: \resizebox{55mm}{!}{\includegraphics{layer}}
326: \resizebox{20mm}{!}{\includegraphics{direc}}
327: \caption{\label{fig:def-layer}
328: The definition of
329: (a) the layer number and
330: (b) three inequivalent directions to which the \AsGa\ is displaced
331: to four possible metastable positions.
332: }
333: \end{figure}
334:
335:
336:
337: For \AsGa defects near a (110) surface,
338: we prepared a slab lattice parallel to the (110) plane
339: in which one surface was relaxed
340: and the other surface was terminated with hydrogen atoms.
341: %
342: For convenience, we refer to the surface layer without hydrogen,
343: though buckled as shown in Fig.~\ref{fig:def-layer}(a),
344: as `layer 1',
345: the one layer down as `layer 2',
346: one more layer down as `layer 3' and so on.
347: %
348: The electronic structures of the system bounded with surfaces
349: were calculated for various configurations:
350: without \AsGa defects,
351: with an \AsGa defect (the stable state)
352: located in the layer 1 to the layer 4.
353: %
354:
355:
356:
357: The procedure of lattice relaxation and
358: electronic structure calculations are as follows.
359: %
360: We first relaxed the surface bounded slab of
361: a lateral size of $3 \times 3/\sqrt{2}$ and a thickness of 7 layers
362: including the layer of hydrogen atoms.
363: %
364: The lattice constant was fixed in this case too.
365: %
366: The positions of atoms
367: in the relaxed configuration displaced
368: from those of the ideal atomic positions
369: are smaller than 0.2~\AA, 0.1~\AA\ and 0.05~\AA\ for the first,
370: the second and the third neighbor atoms of \AsGa , respectively.
371: %
372: Some of the neighbor atoms were displaced considerably,
373: especially near the surface.
374: %
375: For example,
376: for an \AsGa located on the layer 2,
377: the third neighbor atoms on the layer 1 were displaced by 0.063~\AA,
378: whereas the third neighbors on the layer 3 only by 0.019~\AA.
379: %
380: Therefore, the atoms at shallow depths from the surface
381: were not fixed tightly while the atoms further than third neighbors
382: were fixed since all these atoms, even if relaxation was allowed,
383: were found to be displaced by only a magnitude smaller than 0.07~\AA.
384: %
385: After relaxing the small system,
386: we embedded it in a larger system with a surface of a size of
387: $4\times 4/\sqrt{2}$ and 5 layers including the hydrogen layer.
388: %
389: For an \AsGa on the layer 4,
390: we embedded the relaxed system
391: in a still larger system of the same surface size
392: $4\times 4/\sqrt{2}$ but of 6 layers in thickness.
393:
394:
395:
396:
397: For calculations of metastable \Asi-\VGa\ pairs,
398: we should note that there are three inequivalent configurations
399: regarding the displacement direction
400: relative to the surface as shown in Fig.~\ref{fig:def-layer}(b).
401: %
402: We hereafter call the ``up'' configuration
403: for the displacement direction ascending to the surface,
404: the ``side'' configuration
405: for the direction parallel to the surface,
406: and the ``down'' configuration
407: for the direction descending from the surface.
408: %
409: The lattice relaxed to
410: a metastable configuration similar to
411: that in the bulk crystal except for \AsGa atoms on the layer 1,
412: where the similar displacement of the surface
413: \AsGa atoms would destabilize the surface buckling
414: and therefore is energetically unfavorable.
415:
416:
417:
418:
419: According to Tersoff-Hamann theory,~\cite{tersoff1985}
420: filled-state STM images under a negative sample bias of $-2.3$~V,
421: the bias condition experimentally employed
422: in the previous study,~\cite{hida2001}
423: were simulated by taking into account only the highest occupied state
424: that should give the main contribution to the contrast.
425: %
426: The image was calculated
427: as a two-dimensional contour map of
428: the iso-surface of electron density
429: of the highest occupied state in vacuum out of the surface.
430:
431:
432:
433:
434: %___________________________________________________
435: \begin{figure*}[t]
436: \resizebox{40mm}{!}{\includegraphics{bulk-band.eps}}
437: \resizebox{40mm}{!}{\includegraphics{bulk-band-stable.eps}}
438: \resizebox{40mm}{!}{\includegraphics{bulk-band-meta.eps}}\\
439: \resizebox{40mm}{!}{\includegraphics{bulk-dos.eps}}
440: \resizebox{40mm}{!}{\includegraphics{bulk-dos-stable.eps}}
441: \resizebox{40mm}{!}{\includegraphics{bulk-dos-meta.eps}}\\
442: \caption{\label{fig:bands}
443: The band structure,
444: the total density of states (DOS),
445: and the local density of states (\lDOS) in the energy range of
446: the band gap in a relaxed system with a unit cell of 64 atoms.
447: %
448: The energy zero is set to be at the position of the top of
449: the bulk valence bands.
450: %
451: (a) The $E-{\bf k}$ relation without defect.
452: (b) The $E-{\bf k}$ relation with \AsGa
453: in the stable configuration.
454: (c) The $E-{\bf k}$ relation with \Asi-\VGa pair
455: in the metastable configuration.
456: (d) The DOSs without defect corresponding to (a).
457: The solid line: total DOS,
458: broken line: \lDOS\ of Ga,
459: dotted line: \lDOS\ of As.
460: (e) The DOSs with \AsGa corresponding to (b).
461: The solid line: total DOS,
462: broken line: \lDOS\ of As$_{\rm Ga}$,
463: dotted line: averaged \lDOS\ of neighboring four As atoms.
464: (f) The DOSs with \Asi-\VGa pair corresponding to (c).
465: The solid line: total DOS,
466: broken line: \lDOS\ of As$_{\rm i}$,
467: dotted line: averaged \lDOS\ of neighboring four As atoms.
468: %
469: In the $E-{\bf k}$ relations, the dashed horizontal lines represent
470: the Fermi energies.
471: %
472: In comparison with the stable configuration (e),
473: the Fermi energy $E_{\rm F}$ shifts
474: in the metastable configuration (f)
475: and the gap state becomes unoccupied.
476: }
477: \end{figure*}
478:
479:
480:
481: %___________________________________________________
482: \begin{figure}[b]
483: \resizebox{60mm}{!}{\includegraphics{bird-eye.eps}}\\
484: \caption{\label{fig:bird-eye}
485: The typical iso-surface of the electron density of
486: the highest occupied band in the stable configuration in bulk.
487: }
488: \end{figure}
489: %___________________________________________________
490:
491:
492:
493:
494:
495: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
496: % Electronic Structure %
497: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
498: \section{\label{sec:elec} Electronic Structure}
499:
500:
501:
502:
503: %=====================================================================%
504: % As antisite in bulk crystal %
505: %=====================================================================%
506: \subsection{As antisite in bulk crystal}
507:
508:
509: %---------------------------------------------------------------------%
510: % Stable configuration %
511: %---------------------------------------------------------------------%
512: \subsubsection{Stable configuration}
513:
514:
515:
516: Figures \ref{fig:bands}(a) and \ref{fig:bands}(b) show
517: the $E-{\bf k}$ relations calculated by the LMTO method
518: in a bulk system with a unit cell of 64 atoms.
519: %
520: Figure \ref{fig:bands}(a) is that of the perfect lattice
521: and \ref{fig:bands}(b)
522: that of the lattice containing an \AsGa atom
523: in the stable configuration.
524: %
525: The band structure of the perfect lattice
526: is characterized by three bands with energy gaps,
527: the As s band below $-10.0$~eV,
528: the valence band
529: between $0.0$~eV and $-7.5$~eV,
530: and the conduction band above the energy gap.
531: %
532: An \AsGa atom in the stable configuration
533: introduces an occupied band with relatively small dispersion
534: in the band gap
535: as shown in Fig.~\ref{fig:bands}(b).
536: %
537: The DOS of perfect lattice and that of the lattice
538: containing an \AsGa in the stable configuration are
539: shown in Figs.~\ref{fig:bands}(d) and ~\ref{fig:bands}(e) respectively.
540: %
541: Comparison between the two figures
542: indicates that \AsGa atom introduces the gap state
543: mainly localized at the \AsGa atom
544: and neighboring four As atoms.
545:
546:
547:
548:
549: Figure \ref{fig:bird-eye}
550: shows the iso-surface of electron density
551: of the highest occupied state in the gap calculated
552: by the plane wave basis for a system of 192 atoms
553: containing an \AsGa in the stable configuration.
554: %
555: One may see the \Td\ ~symmetric structure extending
556: first along four [111] directions
557: and then each further branching out along three [110] directions.
558: %
559: The decreasing electron density with distance
560: from the \AsGa shows
561: the localized nature of the corresponding
562: \lDOS\ at the \AsGa atom (Fig.~\ref{fig:bands}(e)).
563: %
564: The iso-surface of electron density is shown also in
565: Figs.~\ref{fig:iso-stable}(a) and ~\ref{fig:iso-stable}(b).
566: %
567: We note that the electron density at the \AsGa site
568: is s-like (colored in red)
569: and those on the nearest neighbor As sites are p-like
570: (colored in blue) with the lobes heading toward the \AsGa atom.
571: %
572: These p-like iso-surface are respectively linked
573: to the central s-like iso-surface with a distinct node.
574: %
575: The electron density on the third nearest neighbor As atoms
576: are also p-like (colored in green) with the lobes aligning
577: in the same directions as those of the first neighbor As atoms
578: and the fifth neighbors (colored in yellow)
579: again forming nodes between them.
580: %
581: Thus, the electronic structure
582: of the highest occupied level
583: in the stable configuration
584: has a radial pattern that are characterized
585: by the mutually anti-bonding As p-orbitals.
586:
587:
588:
589: The defect formation energy $\Omega$ of \AsGa
590: in the unit cell of 64 atoms,
591: is written in As-rich limit
592: as ~\cite{zhang1991}
593: \begin{equation}
594: \Omega
595: =
596: E_{\rm D}
597: - N_{\rm e} \mu_{\rm e}
598: - N_{\rm Ga} \mu_{\rm GaAs}
599: - (N_{\rm As} - N_{\rm Ga}) \mu_{\rm As(bulk)},
600: \end{equation}
601: where
602: $E_{\rm D}$ is the total energy
603: of the system with \AsGa,
604: $\mu_e$ is the chemical potential of electron,
605: $\mu_{\rm GaAs}$ is the energy per atomic pair of bulk GaAs,
606: and $\mu_{\rm As(bulk)}$ is the energy per atom of pure bulk As.
607: %
608: $N_{\rm e}(=0)$ is the charge of the defect,
609: and $N_{\rm Ga}$ and $N_{\rm As}$ are the numbers of atoms
610: of each species in the system.
611: %
612: The defect formation energy is estimated to be 0.6 eV
613: by using the $\Gamma$ point sampling
614: for the total energy calculation.
615: %
616: However, this total energy is underestimated
617: since, as seen in the Fig.~\ref{fig:bands}(b),
618: $\Gamma$ point is the bottom of the dispersion of the midgap
619: impurity level.
620: %
621: Since the peak of the midgap impurity level locates at 0.31 eV
622: above its bottom,
623: the amount of underestimated energy would be 0.6 eV.
624: %
625: By adding it to the total energy,
626: we estimate the defect formation energy to be 1.2 eV.
627: %
628: This value is consistent with those of the previous calculations
629: 1.4-1.8~eV.~\cite{zhang1991, schick2002}
630: %
631:
632: %----------------------------------------------------------------------%
633: % Metastable Configuration %
634: %----------------------------------------------------------------------%
635: \subsubsection{Metastable configuration}
636:
637:
638:
639: Figures \ref{fig:bands}(c) and \ref{fig:bands}(f)
640: show the $E - {\bf k}$ relation,
641: the total DOS
642: and the \lDOS\ calculated
643: by the LMTO method for a system with
644: a unit cell of 64 atoms
645: containing an \AsGa\ atom in the metastable configuration
646: (\Asi-\VGa)
647: that was fully relaxed by the pseudopotential method.
648: %
649: The analysis of the \lDOS\ shows
650: that the basis function localized at the \Asi atom constitutes
651: the main contribution to the lowest unoccupied states
652: introduced in the band gap
653: between the valence band and the conduction band.
654: %
655: Instead, there are no occupied states
656: associated with localized orbitals
657: at the \Asi atom near the Fermi level.
658: %
659: This implies that the lowest unoccupied states
660: and the highest occupied states in the stable configuration
661: exchange their energetic order in the metastable configuration.
662: %
663: However, the position of the unoccupied level in the gap
664: was found to be sensitive to the computational detail.
665: For instance, a pseudopotential calculation with a larger supercell
666: shifts this unoccupied level
667: to a slightly higher energy position
668: in the conduction band region.
669:
670:
671:
672:
673: Figures \ref{fig:iso-meta}(a) and \ref{fig:iso-meta}(b) show
674: the electron density of the corresponding
675: highest occupied state of the system of 192 atoms
676: containing a relaxed \Asi -\VGa\ pair.
677: %
678: The electron density of this state
679: extends over a wider range and differs substantially
680: from the symmetric radial pattern in the stable configuration shown
681: in Figs.~\ref{fig:iso-stable}(a) and \ref{fig:iso-stable}(b).
682: %
683: The less localized feature is consistent
684: with the large dispersion of the highest occupied band
685: that merges into the bulk valence bands as seen
686: in Fig.~\ref{fig:bands}(c).
687: %
688: We should note that the iso-surface
689: of the electron density at the \Asi atom
690: becomes p-like in the metastable configuration
691: in contrast to the s-like feature
692: in the stable configuration.
693: %
694: The p-like iso-surface at the \Asi is in parallel to those of
695: the three neighboring As atoms with no nodes between them.
696: %
697: The radial pattern characteristics
698: of the stable configuration
699: is broken to \Ctv.
700: %
701: Among the iso-surface branches extending in four [111] directions,
702: the branch remained is only the one in the direction
703: opposite to the displacement direction of the \AsGa atom.
704: %
705: The lobe of the branch, however, preserves
706: the p-like anti-bonding character as in the stable configuration.
707:
708:
709:
710:
711:
712: %======================================================================%
713: % As antisite located near (110) surface %
714: %======================================================================%
715: \subsection{As antisite located near (110) surface}
716:
717:
718:
719:
720: %--------------------------------------------------------------
721: \begin{figure*}
722: \resizebox{60mm}{!}{\includegraphics{bulk-stable-top}}
723: \resizebox{60mm}{!}{\includegraphics{bulk-stable-side}}\\
724: \resizebox{60mm}{!}{\includegraphics{iso-l3s-top}}
725: \resizebox{60mm}{!}{\includegraphics{iso-l3s-side}}\\
726: \resizebox{60mm}{!}{\includegraphics{iso-l2s-top}}
727: \resizebox{60mm}{!}{\includegraphics{iso-l2s-side}}\\
728: \resizebox{60mm}{!}{\includegraphics{iso-l1s-top}}
729: \resizebox{60mm}{!}{\includegraphics{iso-l1s-side}}\\
730: \resizebox{60mm}{!}{\includegraphics{iso-l0s-top}}
731: \resizebox{60mm}{!}{\includegraphics{iso-l0s-side}}\\
732: \caption{\label{fig:iso-stable}
733: The iso-surface of the electron density
734: of the highest occupied level
735: of \AsGa\ in the stable configuration
736: calculated by pseudopotential method.
737: %
738: The figures in left and right column are the top
739: and side view of the electronic density, respectively.
740: %
741: Figures (a) and (b) represent the iso-surfaces
742: of electron density $1.37 \times 10^{-3}$ e/\AA${}^3$\ in
743: the bulk crystal.
744: %
745: Black spheres represent As atoms, and white spheres Ga atoms.
746: %
747: The color red, blue, green and yellow,
748: represent the wavefunction on the central \AsGa,
749: the first, the third and the fifth neighbor
750: As atoms, respectively.
751: %
752: The wavefunction has little amplitude on the Ga site.
753: %
754: The average of the electron density of this level is
755: $2.31 \times 10^{-4}$ e/\AA${}^3$.
756: %
757: In the stable configuration,
758: there are nodes
759: between the s-orbital of the \AsGa (red) and
760: p-orbitals of neighboring four As atoms.
761: %
762: Figures (c) to (j) show the iso-surface of electron density
763: $2.26\times 10^{-3}$ e/\AA${}^3$\ for
764: an \AsGa\ in the layer 4 ((c), (d)),
765: the layer 3 ((e), (f)), the layer 2 ((g), (h)),
766: and the layer 1 ((i), (j)).
767: %
768: The average electron density of this level is
769: $1.73\times 10^{-4}$ e/\AA${}^3$.
770: }
771: \end{figure*}
772: %--------------------------------------------------------------
773:
774: %----------------------------------------------------------------------%
775: % Stable configuration %
776: %----------------------------------------------------------------------%
777: \subsubsection{Stable configuration}
778: For slab systems with a surface,
779: the electronic energy levels were calculated
780: only by the pseudopotential method with plane wave basis.
781: %
782: Except for the \AsGa located in the surface layer (the layer 1),
783: the highest occupied state remains amid
784: in the band gap as in the bulk crystal.
785: %
786: The absence of the gap state associated with \AsGa located
787: in the layer 1 is shown also by the \lDOS\
788: calculated by the LMTO for a system of 60 atoms
789: with the surface size of $2 \times 3/\sqrt{2}$
790: and the thickness of 5 layers
791: terminated with hydrogens on one side.
792: %
793: Figures
794: \ref{fig:iso-stable}(c)-(j)
795: show the iso-surfaces of electron density
796: of the highest occupied states in the gap
797: for an \AsGa located in the stable configuration
798: in the layer 1-4.
799: %
800: In all the cases, the features of the iso-surface is essentially
801: the same as those in the bulk crystal
802: (Figs. \ref{fig:iso-stable}(a) and \ref{fig:iso-stable}(b)):
803: the s-like feature at the \AsGa site and the p-like ones
804: at the neighboring As atoms.
805: %
806: The radial pattern characteristics of the highest occupied state
807: in the bulk crystal look as if it were just terminated
808: with the surface.
809: %
810: Even in the \AsGa located in the layer 2
811: (Figs. \ref{fig:iso-stable}(g) and \ref{fig:iso-stable}(h)),
812: though the electron density is concentrated mainly on the first
813: and the third neighbor As atoms near the surface
814: with more distinct p-like features than in the bulk lattice,
815: the atomic configuration around the \AsGa almost remains the same
816: as in the bulk lattice.
817: %
818: The \AsGa located in the layer 3
819: (Figs. \ref{fig:iso-stable}(e) and \ref{fig:iso-stable}(f)),
820: however, shows a subtle difference
821: in the iso-surface from that in the bulk crystal.
822: %
823: The p-like iso-surface at the first nearest As atom
824: extends considerably
825: to Ga atoms in the layer 1
826: forming $\pi$-like bonds without a node.
827: %
828: This may be an effect of the surface buckling:
829: For the surface Ga, As in the layer 2, and \AsGa,
830: the angle of Ga-As-\AsGa is at 87$^\circ$,
831: which is approximately right angle,
832: so that the p-orbitals on the As atoms can easily form $\pi$ bonds.
833: %
834: The situation is quite different
835: when the As antisite is located in the layer 1,
836: for which Figs. \ref{fig:iso-stable}(i) and \ref{fig:iso-stable}(j) show
837: the iso-surface of the electron density.
838: %
839: The cause of such a surface effect
840: on the electronic structure is discussed
841: in Sec.~\ref{sec:discussion}.
842:
843:
844:
845: %----------------------------------------------------------------------%
846: % Metastable configuration %
847: %----------------------------------------------------------------------%
848:
849:
850:
851: %___________________________________________________
852: \begin{figure*}
853: \resizebox{60mm}{!}{\includegraphics{bulk-meta-top}}
854: \resizebox{60mm}{!}{\includegraphics{bulk-meta-side}}\\
855: \resizebox{60mm}{!}{\includegraphics{iso-l2m3-top}}
856: \resizebox{60mm}{!}{\includegraphics{iso-l2m3-side}}\\
857: \resizebox{60mm}{!}{\includegraphics{iso-l1m3-top}}
858: \resizebox{60mm}{!}{\includegraphics{iso-l1m3-side}}
859: \caption{\label{fig:iso-meta}
860: The iso-surface of the electron density
861: when \Asi is located at the metastable position
862: in the bulk crystal ((a), (b)), in
863: the third ((c), (d)) and
864: the second layer ((e), (f)).
865: %
866: The figures in left and right column are the top
867: and side view of the electronic density, respectively,
868: as Fig.~\ref{fig:iso-stable}.
869: %
870: In the metastable configuration
871: in bulk crystal ((a), (b)),
872: there are no nodes
873: between the p-orbital of \Asi (colored in red) and
874: p-orbitals (colored in gray) of neighboring three As atoms.
875: See also the caption of Fig. 4.
876: }
877: \end{figure*}
878: %---------------------------------------------------------
879:
880: %----------------------------------------------------------------------%
881: % Metastable configuration %
882: %----------------------------------------------------------------------%
883: \subsubsection{Metastable configuration}
884:
885: As mentioned in Sec.~\ref{sec:comp},
886: there are three inequivalent directions
887: to which the antisite As atom
888: could be displaced to form a \Asi-\VGa\ pair.
889: %
890: Since the STM experiment \cite{hida2001}
891: shows that the defect contrasts
892: in the metastable state are all symmetric
893: with respect to the [001] axis,
894: the ``up'' or ``down'' configurations could be a candidate
895: for the metastable state.
896: %
897: As shown later in Sec.~\ref{sec:discussion},
898: only the ``down'' configuration
899: gives a better agreement of the calculated STM image
900: with that of experiments.
901: %
902: Therefore, only the ``down'' configuratin is discussed
903: for a possible metastable state of \Asi-\VGa\ pairs
904: in this section.
905: %
906: When the As antisite is located just on the surface,
907: no metastable configuration is found in simulation.
908:
909:
910:
911:
912: Figures \ref{fig:iso-meta}(c)-(f) show
913: the iso-surfaces
914: of the electron density
915: of the highest occupied state
916: when the \Asi-\VGa\ pair is formed in the layer 3 and the layer 2.
917: %
918: It is notable that the electron density
919: increases exclusively along the direction
920: opposite to the displacement direction of the \AsGa,
921: which is essentially the same as in the bulk lattice.
922: %
923: The iso-surface localized on the \Asi and the neighboring
924: three As atoms in the puckered configuration
925: has commonly p-like lobes bonding with each other without nodes
926: as in the bulk lattice.
927: %
928: However, the degree of localization of the highest occupied state
929: is slightly dependent on the depth of the \Asi atom.
930: %
931: When the \Asi atom is located in the layer 2
932: (Figs.~\ref{fig:iso-meta}(e) and \ref{fig:iso-meta}(f)),
933: the highest occupied state is well localized:
934: %
935: The electron density is distributed mainly along
936: the [11$\overline{1}$] direction.
937: %
938: When the \Asi is located in the layer 3
939: (Figs.~\ref{fig:iso-meta}(c)
940: and ~\ref{fig:iso-meta}(d)),
941: the electron density is less localized having a distribution
942: over atoms outside the branches.
943: %
944: Except for these fine details, the crystal surface has
945: little effect on the electronic structure
946: of the metastable configuration as in the stable one
947: as far as the \Asi atom is located below the layer 1.
948:
949:
950:
951:
952: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
953: % Discussion %
954: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
955: \section{\label{sec:discussion}Discussion}
956:
957:
958:
959: %======================================================================%
960: % Validity of The Embedded Systems %
961: %======================================================================%
962: \subsection{VALIDITY OF EMBEDDED SYSTEMS}
963:
964: In constructing the atomic configuration,
965: two approximations are employed.
966: %
967: First, we relaxed only the atoms in smaller supercell
968: and fixed the lattice constant.
969: %
970: The expansion of the lattice constant
971: by the introduce of \AsGa\
972: is 1~\%. \cite{staab2001}
973: %
974: It is relatively small in comparison with
975: the change of the distance 6~\%
976: between \AsGa\ and its nearest neighbor.
977: %
978: The atomic configuration
979: around As interstitial is well converged
980: in the system of 65 atoms, \cite{staab2001}
981: and, therefore, we presume
982: that it is also the case in \AsGa.
983: %
984: Although we actually tried
985: to calculate the electronic structure
986: without the relaxation of the atoms,
987: there remains the features of the electronic structures
988: discussed in Figs. 4 and 5.
989: %
990: From these considerations,
991: we conclude that little error is introduced
992: by fixing the lattice constant.
993:
994:
995:
996:
997: One may consider that the calculated wavefunction
998: could be sensitive to the number of layers.
999: %
1000: We calculated the electronic structure
1001: of the system with smaller surface area and more layers,
1002: and found that the essential characteristics of wavefunctions
1003: are already converged.
1004: %
1005: Therefore, the electronic structure is not sensitive
1006: to the number of layer, or the surface size.
1007:
1008:
1009:
1010:
1011:
1012: %======================================================================%
1013: % Simulated STM images %
1014: %======================================================================%
1015: \subsection{SIMULATED STM IMAGES}
1016:
1017:
1018:
1019:
1020: %----------------------------------------------------------------------%
1021: % STM image in the stable configuration %
1022: %----------------------------------------------------------------------%
1023: \subsubsection{STM image in the stable configuration}
1024:
1025: Figures \ref{fig:stm-stable}(a), \ref{fig:stm-stable}(b),
1026: and \ref{fig:stm-stable}(c) show the simulated
1027: filled-state STM images of stable
1028: \AsGa atoms in different depths from the surface.
1029: %
1030: The images were calculated by assuming a negative sample bias
1031: and hence considering
1032: only the iso-surface of the highest occupied state.
1033: %
1034: The image of the \AsGa in the layer 2
1035: is in good agreement with the previous results.~\cite{capaz1995}
1036: %
1037: As mentioned in Sec.~\ref{sec:elec}, even when the \AsGa
1038: is located near the surface,
1039: the wavefunction (iso-surface) of the highest occupied state
1040: does not differ much from that in the bulk lattice
1041: with the characteristic radial pattern.
1042: %
1043: Owing to this fact,
1044: when the \AsGa is located in the layer 2
1045: (Fig.~\ref{fig:stm-stable}(a)),
1046: the STM contrast of the defect core arises
1047: from the wavefunction concentrated at As atoms
1048: in the surface layer (the layer 1)
1049: that are neighboring to the \AsGa,
1050: and the satellite contrasts near the core from the wavefunction
1051: at the third As neighbors also in the surface layer (the layer 1).
1052: %
1053: When the \AsGa is located in the layer 3
1054: (Fig.~\ref{fig:stm-stable}(b)),
1055: the highest occupied state has a large density
1056: on the surface just above the \AsGa atom
1057: and the fifth As neighbors in the surface layer,
1058: giving the satellite features.
1059: %
1060: For the \AsGa located in the layer 4
1061: (Fig.~\ref{fig:stm-stable}(c)),
1062: the satellite peaks arise from the seventh As neighbors.
1063: %
1064: Thus, since the satellite peaks originate in the radial
1065: pattern of the iso-surface of the highest occupied state,
1066: they become more remote from the core contrast
1067: with increasing depth of the \AsGa from the surface.
1068:
1069:
1070:
1071: Feenstra et al. \cite{feenstra1993} argued
1072: (later referred to as FWP)
1073: that the defect in the STM contrast in their largest size (type A)
1074: should be assigned to an \AsGa in the layer 1,
1075: the defect in the second size (type B) to one in the layer 2,
1076: the third size (type C) to one in the layer 3,
1077: and the fourth size (type D) to one in the layer 4.
1078: %
1079: Their criterion used for judging the depth of the defect
1080: was the relative position of surface As atom contrasts
1081: with respect to the defect core contrast.
1082: %
1083: Geometrically, if the \AsGa atom is located
1084: in an odd-numbered layer,
1085: the mirror symmetric (1$\overline{1}$0) plane
1086: passing the \AsGa atom must
1087: cut halfway between As atoms in the surface layer.
1088: %
1089: In contrast, if the \AsGa is located in an even-numbered layer,
1090: the mirror plane must pass an As atom in the surface layer.
1091: %
1092: The assignment by FWP of type B defect as an \AsGa in the layer 2
1093: agrees with the assignment by Capaz et al.~\cite{capaz1995}
1094: %
1095: As for an \AsGa in the layer 1,
1096: Ebert et al. reported a defect image
1097: that is quite different from type A defects by FWP,
1098: though such defects were not observed in our experiments probably
1099: due to the excessively large magnitude
1100: of the bias voltage.~\cite{ebert2001}
1101: %
1102: Figures \ref{fig:stm-stable}(d) and
1103: \ref{fig:stm-stable}(e)
1104: show experimental STM images typically observed
1105: at a sample bias of $-2.3$~V.
1106: %
1107: Our experimental images shown
1108: in Figs.~\ref{fig:stm-stable}(d)
1109: and \ref{fig:stm-stable}(e) seem
1110: identical to respectively the type B and C defects
1111: in experiments by FWP.~\cite{feenstra1993}
1112:
1113:
1114:
1115:
1116: Another criterion for depth assignment
1117: is the distance between the two satellites
1118: from the core contrast as stated above.
1119: %
1120: The order of the experimental images
1121: in Fig.~\ref{fig:stm-stable}
1122: are tentatively arranged according to this criterion.
1123: %
1124: Although the quantitative agreement is not perfect,
1125: we could assign the image shown
1126: in Fig.~\ref{fig:stm-stable}(e) to an \AsGa in the layer 3,
1127: and image Fig.~\ref{fig:stm-stable}(d) to an \AsGa
1128: in the second layer.
1129: %
1130: The assignment of the type B defect (Fig.~\ref{fig:stm-stable}(d)),
1131: the same as proposed by Capaz et al.,~\cite{capaz1995}
1132: seems reasonable
1133: because the agreement of the defect contrast
1134: in the metastable state is better
1135: than otherwise as shown in what follows.
1136:
1137:
1138:
1139:
1140: %----------------------------------------------------------------------%
1141: % STM image in the metastable configuration %
1142: %----------------------------------------------------------------------%
1143: \subsubsection{STM image in the metastable configuration}
1144:
1145:
1146:
1147:
1148: Figure~\ref{fig:stm-metastable}(c)
1149: shows the experimental STM image
1150: of the defect in the metastable state
1151: that underwent a change from the contrast shown
1152: in Fig.~\ref{fig:stm-stable}(e).
1153: %
1154: The image in the metastable state is characterized
1155: by the diminish of the satellite peaks
1156: and the concomitant appearance of a new contrast
1157: elongated along the surface As atom along [110] row
1158: on the side opposite to the diminished satellites.
1159: %
1160: As shown in Sec.~\ref{sec:elec},
1161: the branches of the radial wavefunction of the highest occupied state
1162: disappear upon transformation to the metastable configuration,
1163: except for only a branch extending in the [111] direction
1164: opposite to the displacement of the \AsGa atoms.
1165: %
1166: This means that if the \AsGa atom near the surface
1167: was displaced to a ``side'' position,
1168: the STM image would lose the mirror symmetry
1169: about the (110) plane.
1170: %
1171: If the \AsGa atom was displaced to the ``up'' position,
1172: the peak position move in the opposite direction
1173: to the one experimentally observed.
1174: %
1175: Both of these contradict the experiments.~\cite{hida2001}
1176:
1177:
1178:
1179:
1180: This conclusion is different from the calculations
1181: by Zhang,~\cite{zhang1999}
1182: where the ``side'' configuration in the second layer
1183: is the most stable energetically
1184: among three possible configurations of the metastable state.
1185: %
1186: Our calculation shows the similar energy barrier
1187: in the path of \AsGa\
1188: from the metastable to the stable positions in these
1189: configurations.
1190: %
1191: The energy barrier heights are 0.5 eV in
1192: the ``side'' configuration in the second layer,
1193: 0.3 eV in the ``down'' configuration in the second layer
1194: (Fig.~\ref{fig:stm-metastable}(a)),
1195: and 0.3 eV in the ``down'' configuration in the third layer
1196: (Fig.~\ref{fig:stm-metastable}(b)).
1197: %
1198: Therefore, it is still a open question
1199: why only one metastable defect image
1200: has been observed in STM experiment
1201: that is not energetically favorable.
1202:
1203:
1204:
1205:
1206: Figures~\ref{fig:stm-metastable}(a)
1207: and \ref{fig:stm-metastable}(b) show
1208: the simulated STM images of \Asi-\VGa\ pairs located
1209: in the layer 2 and in the layer 3,
1210: respectively, with the \Asi\ in the ``down'' configuration.
1211: %
1212: The agreement between simulation and experiment is better
1213: if the \AsGa is assumed to be located in the layer 3
1214: as tentatively assigned above.
1215:
1216: \begin{figure}
1217: \resizebox{35mm}{!}{\includegraphics{stm-l1s.eps}}
1218: \resizebox{35mm}{!}{\includegraphics{stm-type-b.eps}}\\
1219: \resizebox{35mm}{!}{\includegraphics{stm-l2s.eps}}
1220: \resizebox{35mm}{!}{\includegraphics{stm-type-c.eps}}\\
1221: \resizebox{35mm}{!}{\includegraphics{stm-l3s.eps}}
1222: \resizebox{35mm}{!}{\hspace{35mm}}
1223: \caption{\label{fig:stm-stable}
1224: The iso-surface of the electron density $8.32\times 10^{-4}$e/\AA${}^3$
1225: of the highest occupied band when \AsGa locates
1226: near the crystal surface.
1227: The \AsGa locates in
1228: (a) the layer 2,
1229: (b) the layer 3, and
1230: (c) the layer 4.
1231: The color becomes darker with the iso-surface approaching the vacuum.
1232: %
1233: It can be seen that the distance between two satellite peaks becomes larger
1234: as \AsGa locates at deeper positions.
1235: %
1236: Figures (d) and (e) are experimental STM images.}
1237: \end{figure}
1238:
1239:
1240: \begin{figure}
1241: \resizebox{35mm}{!}{\includegraphics{stm-l1m3}}
1242: \resizebox{35mm}{!}{\hspace{35mm}}\\
1243: \resizebox{35mm}{!}{\includegraphics{stm-l2m3}}
1244: \resizebox{35mm}{!}{\includegraphics{stm-meta}}\\
1245: \caption{\label{fig:stm-metastable}
1246: The iso-surface of the electron density of the highest occupied band
1247: when \Asi locates at metastable positions in
1248: (a) the layer 2 and
1249: (b) the layer 3.
1250: %
1251: The satellite peaks in the stable configuration vanish
1252: (Compare with Fig.~\ref{fig:stm-stable}).
1253: %
1254: Figure (c) is an experimentally observed STM image,
1255: of defects as Fig.~\ref{fig:stm-stable}(e)
1256: in the metastable state.}
1257: \end{figure}
1258:
1259:
1260:
1261: %======================================================================%
1262: % Origin of Metastability %
1263: %======================================================================%
1264: \subsection{Origin of metastability}
1265:
1266:
1267:
1268:
1269: The physical origin of the metastability of
1270: \Asi-\VGa\ pairs can be understood
1271: if one examines the change in the bonding character
1272: upon the stable to metastable transformation.
1273: %
1274: As shown in Sec.~\ref{sec:elec},
1275: the \AsGa\ configuration, though lower in total energy,
1276: bears an inherent instability due to the anti-bonding nature
1277: of the chemical bonds with the surrounding atoms.
1278: %
1279: The global expansion of the lattice by the presence of
1280: \AsGa\ defects is, thus, owing to this anti-bonding nature
1281: of the electronic structure associated
1282: with the defects.~\cite{staab2001}
1283: %
1284: On transformation to the metastable state,
1285: the electronic energy of the s-orbital associated
1286: with the \AsGa\ atom that is anti-bonded
1287: with the nearest As atoms is lifted and becomes emptied.
1288: %
1289: In its place,
1290: a gap state associated with an atomic orbital
1291: of p-character originating in the displaced As atom
1292: is drawn from the conduction band,
1293: and it becomes occupied to form bonds
1294: with three neighboring As atoms.
1295: %
1296: Thus, some of the increase of the total energy
1297: on transformation is canceled by the newly formed chemical bonds
1298: which contributes to the affinity
1299: of the interstitial As atom with the surrounding.
1300:
1301:
1302:
1303:
1304: Since the energy gain by such bond reconstruction
1305: should become larger with decreasing distance
1306: between the atoms,
1307: the change of the dominant orbital of the \AsGa
1308: from s to p-orbital,
1309: and the disappearance of the anti-bonding node
1310: between \Asi and the surrounding As atoms
1311: approached by \AsGa\ are considered to be
1312: the reasons why the metastable state exists.
1313:
1314:
1315: %======================================================================%
1316: % As antisite in (110) surface %
1317: %======================================================================%
1318: \subsection{As antisite in (110) surface}
1319:
1320:
1321:
1322: As shown in Figs.~\ref{fig:iso-stable} and ~\ref{fig:iso-meta},
1323: the presence of surface has no significant effects
1324: on the electronic structures associated with \AsGa\ defects
1325: as far as they are located deeper than the layer 2.
1326: %
1327: It is only when the \AsGa is located in the surface layer
1328: (the layer 1)
1329: that no level is formed in the band gap.
1330: %
1331: Due to the absence of the gap state
1332: or the spatial spread of the occupied states,
1333: \AsGa\ defects in the layer 1 give rise
1334: to no localized STM contrast at negative sample biases,
1335: in agreement with the results obtained by Ebert et al. \cite{ebert2001}
1336:
1337:
1338:
1339:
1340: The surface buckling \cite{alves1991}
1341: which is reproduced in the present calculation as well is induced
1342: by the electron transfer in the Ga dangling bond
1343: which is higher in energy to the As dangling bond.
1344: %
1345: This causes a change of the orbital character
1346: from $\mathrm{sp^3}$ in the perfect lattice to $\mathrm{sp^2}$-like
1347: on the surface Ga atom and to $\mathrm{p^3}$-like
1348: on the surface As atom,
1349: thereby resulting in the retraction
1350: of the Ga atom and the protrusion of the As atom from the surface.
1351: %
1352: Concomitantly, the As dangling bond state smears into the valence band,
1353: and the Ga dangling bond state into the conduction bands.
1354: %
1355: It is expected that when \AsGa\ defect is located
1356: in the surface (layer 1),
1357: \AsGa reverts to the unbuckling position
1358: as noticed in a figure of the paper
1359: by Ebert et al. \cite{ebert2001}
1360:
1361:
1362:
1363:
1364: To test this idea,
1365: we calculated a model system of 60 atoms
1366: with the surface size $2 \times 3/\sqrt{2}$ and
1367: with 5 layers including the hydrogen layer
1368: by the LMTO method.
1369: %
1370: This model had a clean (110) surface on one end,
1371: and the other surface was terminated by hydrogens.
1372: %
1373: Then, \AsGa\ was positioned at the same height of As atoms
1374: in the surface layer.
1375: %
1376: Figures \ref{fig:stm-l0-dos} shows the \lDOS\
1377: at the As atom in the surface layer next
1378: to the \AsGa (a) and As atoms distant from the \AsGa (b).
1379: %
1380: The height of the \lDOS\ just below the Fermi energy
1381: (between $E_{\rm F}-0.4$~eV and $E_{\rm F}$)
1382: is quite different;
1383: As atoms in the surface layer away from \AsGa contain electrons
1384: more than an As atom next to \AsGa.
1385: %
1386: This means that the electrons on the As atoms next to \AsGa
1387: in the surface layer transfer into \AsGa.
1388:
1389:
1390:
1391:
1392: Atoms in the surface layer align
1393: in one-dimensional zigzag chains,
1394: but each chain does not connect with adjacent chains.
1395: %
1396: Figure~\ref{fig:stm-l0}(a) shows
1397: the iso-surface of the highest occupied state
1398: which is extended over the whole system
1399: with the major component along the [1$\overline{1}$0] chain
1400: of surface As atoms
1401: next to the [1$\overline{1}$0] chain containing the \AsGa.
1402: %
1403: The large electron density on this chain originates
1404: mainly in the dangling bond orbitals of the As atoms.
1405: %
1406: The much smaller but some density on the \AsGa
1407: is due to the dangling bond p-orbital of the \AsGa atom.
1408: %
1409: The electron density on the other As atoms
1410: in the [1$\overline{1}$0] surface chain
1411: containing the \AsGa does not originate
1412: in the dangling bond
1413: but in the As p-orbitals parallel
1414: to the dangling p-orbital of the \AsGa.
1415: %
1416: In contrast to the highest occupied states,
1417: the lowest unoccupied state (Fig.~\ref{fig:stm-l0}(b))
1418: is localized around the \AsGa.
1419: %
1420: The iso-surface consists mainly of the dangling bonds
1421: of the \AsGa and the As atoms in the chain containing the \AsGa.
1422: %
1423: In other words,
1424: the dangling bond orbitals of the As atoms are occupied
1425: when \AsGa is absent in the zigzag chain,
1426: and are unoccupied when \AsGa is present in the chain.
1427: %
1428: This means
1429: that electrons transferring to \AsGa are
1430: those occupying the dangling bond orbitals of As atoms
1431: next to \AsGa in the surface
1432: in case of the perfect lattice.
1433: %
1434: When \AsGa located in the surface layer,
1435: electron transfer does not occur
1436: because the energy of dangling bond orbital of
1437: As is almost the same
1438: as that of \AsGa
1439: and the buckling does not stabilize
1440: the state of the electron transfer.
1441: %
1442: Thus, the surface buckling on the site of \AsGa in the surface layer
1443: does not take place.
1444: %
1445:
1446:
1447: %___________________________________________________
1448: \begin{figure}
1449: \resizebox{40mm}{!}{\includegraphics{l0-dos-near}}
1450: \resizebox{40mm}{!}{\includegraphics{l0-dos-far}}
1451: \caption{\label{fig:stm-l0-dos}
1452: The local density of states (\lDOS) of
1453: (a) the As atom in the surface layer next to \AsGa in the surface layer,
1454: and
1455: (b) an As atom in the surface layer further away from \AsGa.
1456: The weight of \lDOS\ just below the Fermi energy
1457: (between $E_{\rm F}-0.4$~eV and $E_{\rm F}$),
1458: of (a) is smaller than that of (b).
1459: }
1460: \end{figure}
1461:
1462: %___________________________________________________
1463: \begin{figure}
1464: \resizebox{40mm}{!}{\includegraphics{stm-l0h0.eps}}
1465: \resizebox{40mm}{!}{\includegraphics{stm-l0l0.eps}}
1466: \caption{\label{fig:stm-l0}
1467: The iso-surface of the electron density on the crystal surface
1468: of the highest occupied band calculated by the LMTO method
1469: when an \AsGa is in the surface layer.
1470: (a) Between the top of valence band and 0.2~eV below, and
1471: (b) between the bottom of conduction band and 0.2~eV above it.
1472: The \AsGa is located at the center of the right zigzag chain.
1473: }
1474: \end{figure}
1475:
1476:
1477:
1478:
1479: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
1480: % Conclusion %
1481: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%
1482: \section{\label{sec:conclusion} Conclusion}
1483:
1484: We presented the electronic structures of the gap state
1485: associated with a single \AsGa in GaAs.
1486: %
1487: The wavefunction in the stable configuration mainly consists
1488: of the s-orbital of \AsGa
1489: and the p-orbitals of the surrounding As atoms.
1490: %
1491: These p-orbitals spread
1492: around \AsGa with a radial pattern
1493: of aligned of As p-orbitals.
1494: %
1495: On the other hand, in the metastable configuration,
1496: the major component of the wavefunction is
1497: the p-orbital of the \Asi and the As atoms around it.
1498: %
1499: In comparison with the stable configuration,
1500: some p-orbitals of the first neighbor As atoms
1501: changes their heading directions
1502: breaking the radial pattern of the alignment of the As p-orbitals.
1503: %
1504: As a result,
1505: a small part of the radial pattern
1506: in the stable configuration remains.
1507: %
1508: These transitions of the orbital and the bonding character
1509: can be regarded as the origin of the metastability.
1510: %
1511: These essential features of electronic structures
1512: do not change
1513: even when the \AsGa is located near the surface.
1514: %
1515: However, when the \AsGa is located just on the surface,
1516: the surface unbuckles leaving
1517: no localized state around the top of the valence band.
1518: %
1519: We can attribute the defect image in the STM experiments
1520: to these wavefunction,
1521: and the disappearance of the satellite peaks of the images to
1522: the change in the wavefunction accompanied
1523: by the change to the metastable state.
1524: %
1525: Although they does not thoroughly support experimental results,
1526: the results of the present calculations provide simple and clear
1527: explanation for the origins of the metastability and the characteristic
1528: defect images in the STM experiments.
1529:
1530: %----------------------------------------------------------------
1531: \section*{ACKNOWLEDGEMENTS}
1532: This work was supported partially by a Grant-in-Aid
1533: for Priority Area on
1534: ``Manipulation of Atoms and Molecules by Electronic Excitation''
1535: from the Ministry of Education, Culture, Sports, Science
1536: and Technology (MEXT) of Japan.
1537:
1538:
1539:
1540:
1541: \bibliography{el2}
1542:
1543:
1544:
1545:
1546: \end{document}
1547:
1548:
1549:
1550: %**********************************************************************%
1551: % End of Document %
1552: %**********************************************************************%
1553: