1: \documentstyle[multicol,aps,prl,epsf]{revtex}
2:
3: \pagestyle{empty}
4: \begin{document}
5:
6: \draft
7:
8: \title{Electric field induced charge injection or exhaustion in organic
9: thin film transistor}
10:
11: \author{
12: Manabu Kiguchi$^1$, Manabu Nakayama$^1$, Toshihiro Shimada$^2$, Koichiro Saiki$^{1,2}$}
13:
14: \address{$^1$Department of Complexity Science $\&$ Engineering, Graduate
15: School of Frontier Sciences, The University of Tokyo, 7-3-1 Hongo,
16: Bunkyo-ku,Tokyo 113-0033, Japan}
17:
18: \address{$^2$Department of Chemistry, Graduate School of Science, The
19: University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan}
20:
21: \date{\today}
22:
23: \maketitle
24:
25: \begin{abstract}
26: The conductivity of organic semiconductors is measured
27: {\it in-situ} and continuously with a
28: bottom contact configuration, as a function of film thickness at various gate voltages.
29: The depletion layer thickness can be directly determined
30: as a shift of the threshold thickness at which electric
31: current began to flow. The {\it in-situ} and continuous measurement can
32: also determine qualitatively
33: the accumulation layer thickness together with the distribution
34: function of injected carriers.
35: The accumulation layer thickness is a few mono layers,
36: and it does not depend on gate voltages, rather depends on the chemical species.
37:
38: \end{abstract}
39:
40: \medskip
41:
42: \pacs{PACS numbers: 79.60.Jv, 61.14.Hg, 68.55.-a}
43:
44: \begin{multicols}{2}
45: \narrowtext
46:
47: \section{INTRODUCTION}
48: \label{sec1}
49:
50: Charge injection or depletion by electric fields in semiconductors is
51: the basis of field electric transistors (FET)\cite{1}.
52: It is also the basis of the field effect control of physical properties,
53: which is one of the hottest topics in the field of condensed matter science.
54: In contrast with chemical doping,
55: the charge injection by electric fields does not introduce
56: any chemical or structural disorder in pristine materials\cite{2,3},
57: and it may be possible to inject carriers in host materials, to which charges
58: can not be injected by chemical doping. In this context, determination of the region,
59: where carriers are practically injected or depleted by electric fields,
60: is an important and fundamental issue.
61: However, there had been little investigation on evaluating experimentally
62: the dimension of these
63: regions\cite{4}.
64:
65: Recently, Dodabalapur {\it et al.} reported a pioneering work
66: relating to the accumulation layer
67: thickness. They estimated that it was 1$\sim$2 ML by comparing FET characteristics of a 2 ML
68: sexithiophene ($\alpha$-6T) film with that of bulk one\cite{5}.
69: However, they did not quantitatively determine
70: the thickness, and quantitative analysis has not been done yet.
71: Recently, we proposed a simple
72: method to determine quantitatively the thickness of the depletion and accumulation layers in
73: organic semiconductor pentacene\cite{6}.
74: The conductivity of pentacene thin film transistor (TFT) was
75: measured {\it in-situ} and continuously with a bottom contact configuration,
76: as a function of film thickness.
77: However, we only discussed the thickness of these layers for one organic species at fixed
78: gate voltage (0, $\pm$15 V).
79: By comparing the result of pentacene TFT with that of another organic TFT,
80: and that at various gate voltages,
81: we could discuss the characteristics of the conductance in organic
82: TFT in more detail. Furthermore, there are many points to discuss;
83: way and validity of estimation, universality of the method, etc.
84:
85: In this study, we have studied the {\it in-situ}
86: and continuous measurement for pentacene and 6T.
87: By measuring the gate voltage and chemical species dependence,
88: we quantitatively discussed the
89: thicknesses of the depletion and accumulation layers in detail, and characteristics of the
90: conductance in organic materials.
91:
92: \section{EXPERIMENTAL}
93: \label{sec2}
94:
95: Figure~\ref{fig1} shows the schematic sample layout.
96: The substrate was a highly doped silicon wafer, acting as a gate electrode.
97: The gate dielectric layer was a 700 nm thermally grown silicon dioxide.
98: On top of the surface, 30 nm thick gold source(S) and drain(D) electrodes
99: were deposited through a shadow mask.
100: The channel length and width were 100 $\mu$m and 5.4 mm.
101: Pentacene (Aldrich) and $\alpha$-6T (Syncom BV) were deposited
102: by means of vacuum deposition.
103: The film thickness was monitored by a quartz crystal oscillator,
104: and it was calibrated by Auger Electron Spectroscopy.
105: The deposition rate was 0.1 nm/min,
106: and the substrate temperature was kept at 310 K during the growth.
107: Under high-vacuum condition, the S-D current of TFT was measured
108: as a function of film thickness with a bottom-contact configuration.
109: During the growth of the organic films, electric fields were not
110: applied in order to exclude the influence of the electric current on the film growth.
111: As a function of the film thickness,
112: the gradual change in the conductivity and FET characteristics were measured
113: {\it in-situ} under the same condition, avoiding the problem of specimen dependence.
114:
115: \section{RESULTS}
116: \label{sec3}
117: \subsection{Depletion layer}
118: \label{sec3a}
119: Figure~\ref{fig2} shows the S-D current ($I_{SD}$) of pentacene
120: and 6T as a function of film thickness at various
121: gate voltages ($V_{G}$); $V_{G}$ =-30, -15, 0, and +15 V.
122: The S-D voltage ($V_{SD}$) was kept at 1 V. Since both
123: pentacene and 6T are p-type semiconductors,
124: large $I_{SD}$ is observed at negative gate voltages. Here
125: we find the presence of threshold thickness ($d_{th}$)
126: at which electric current begins to flow.
127: There are two points to note about $d_{th}$. First, $d_{th}$ is $\sim$1 nm at $V_{G}$=0 V,
128: and finite electric current is observed even for the 1.0 nm thick film.
129: The present result indicates that the S, D electrodes (width 100 $\mu$m)
130: could be electrically connected by only 1 nm thick organic semiconductors.
131: Furthermore, typical p-type FET characteristics were observed for the this film \cite{7}.
132: Second, $d_{th}$ shows clear $V_{G}$ dependence,
133: and it shifts up to 4.4($\pm$0.5) nm for pentacene and $d_{th}$=5.8($\pm$0.6) nm
134: for 6T at $V_{G}$=15 V. The value of $d_{th}$ was well reproduced for several experiments.
135: When positive $V_{G}$ is applied to p-type semiconductors,
136: the depletion layer with a low conductance is
137: formed at the semiconductor/insulator interface.
138: Then, the whole film can be depleted on the thin
139: limit, and $I_{SD}$ does not flow at positive $V_{G}$.
140: Consequently, it is suggested that $d_{th}$ corresponds to the depletion layer thickness.
141:
142: In order to discuss the validity of the above discussion,
143: we estimated the concentration of major carriers by two different ways
144: with the conventional model which has been already established for
145: inorganic semiconductors\cite{1,8}.
146: When a depletion layer is formed at the semiconductor/insulator interface,
147: carriers are exhausted and ionized acceptors are left in the depletion layer.
148: The induced charge amounts to be $Q=CV_{G}$,
149: if a flat band condition is satisfied at $V_{G}$=0 V.
150: Here, $C$ is the capacitance of the gate dielectric,
151: and it is represented as $C=\epsilon _{OX} / t_{OX}$,
152: where $\epsilon _{OX}$: dielectric constant of
153: SiO$_{2}$, $t_{OX}$: thickness of SiO$_{2}$.
154: In the depletion approximation, only ionized acceptors are left in the
155: depletion layer and distributed uniformly in the depletion layer.
156: The concentration of the acceptors ($N$) (i.e. exhausted major carriers) is,
157: thus, obtained by dividing induced charge ($Q$) by the depletion
158: layer thickness ($t_{s}$), and it is represented as $N=Q/et_{s}$ .
159: Because of the charge neutrality at $V_{G}$=0 V,
160: concentration of the major carriers is equal to that of acceptors.
161: Therefore, the concentration of the
162: major carriers of pentacene at $V_{G}$=0 V amounted to $N$=$1.1 \times 10 ^{18} cm^{-3}$
163: using $t_{s}$=4.4 nm at $V_{G}$=15 V,
164: while it amounted to $N$=$8.0 \times 10 ^{17} cm^{-3}$ for 6T
165: using $t_{s}$= 5.8 nm at $V_{G}$=15 V.
166:
167: On the other hand, the concentration of the mobile major carriers can be estimated by the
168: conductance of TFT at $V_{G}$=0 V. Here we assume zero contact potential between organic
169: semiconductors and Au electrodes. This assumption is supported by ohmic behavior of the S, D
170: contacts to the pentacene and 6T active layers observed in the present FET characteristics.
171: The conductivity of the 4.4 nm thick pentacene film was
172: $ 2.5 \times 10 ^{-2} \Omega ^{-1} cm ^{-1}$ using $I_{SD}$ ($ 6.0 \times 10 ^{-7}$ A) at
173: $V_{G}$=0 V, and the conductivity of the 5.8 nm thick 6T film was
174: $ 1.6 \times 10 ^{-6} \Omega ^{-1} cm ^{-1}$
175: using $I_{SD}$ ($5.1 \times 10 ^{-11}$ A) at $V_{G}$=0 V.
176: Since the conductivity is represented as $ne \mu$,
177: where $n$, $e$, and $\mu$ are carrier density, unit charge, and mobility,
178: the concentration of the mobile major carriers ($N_{m}$) at $V_{G}$=0 V is obtained
179: by dividing the conductivity by the mobility of the organic film.
180: Therefore, $N_{m}$ was estimated to be
181: $7.6 \times 10^{17} cm^{-3}$ for pentacene and $N_{m}$=$8.2 \times 10^{16} cm^{-3}$ for 6T.
182:
183: The fact that $N$ determined by $d_{th}$, and $N_{m}$ determined
184: by the conductance at $V_{G}$=0 V, have the same order,
185: indicates that $d_{th}$ actually corresponds to the depletion layer thickness.
186: In other words, we could directly determine the deletion layer thickness
187: as a shift of $d_{th}$ by the present {\it in-situ} and continuous measurement.
188: Furthermore, the measurement was revealed to be a rather general method
189: to determine the depletion layer thickness,
190: because a shift of $d_{th}$ was observed for both organic semiconductors.
191:
192: Although the above discussion on $d_{th}$ is roughly justified,
193: there is a difference between $N$ and $N_{m}$; $N_{m}$ is always lower than $N$.
194: The difference could be caused by several assumptions stated above
195: (i.e. flat band condition, zero contact potential and depletion approximation).
196: On the other hand, the difference could include important information
197: on the concentration of the major carriers.
198: Some of carriers are trapped at trap sites, such as grain boundaries,
199: defects, or semiconductor/insulator (metal) interfaces.
200: Therefore, the difference of concentration between $N$ and $N_{m}$ can be considered
201: to relate to the concentration of the trapped carriers.
202:
203: Here we comment on the effect of impurity on the determination of the depletion layer
204: thickness by the present measurement.
205: Finite conductivity at $V_{G}$=0 V means that the carrier concentration
206: originating from the impurity is higher than the concentration of trap sites.
207: This causes positive threshold gate voltage($V_{th}$) in the FET characteristics.
208: In case of purified samples, however, the carrier concentration
209: can be lower than the concentration of trap sites, and $d_{th}$ would
210: not be observed at positive $V_{G}$.
211: High concentration of impurity is, thus, essential for the present method.
212: Since the depletion layer thickness is inversely proportional to
213: the concentration of major carriers,
214: high concentration of impurity help determination of the depletion layer thickness
215: ($\sim$5 nm at $V_{G}$=15 V).
216:
217:
218: \subsection{Accumulation layer}
219: \label{sec3b}
220:
221: In the previous section, we discussed the depletion layer thickness.
222: In this section, we discuss the thickness of the accumulation layer,
223: and the distribution function of charge injected by electric fields.
224: In the following analysis, we assume that the organic semiconductors grow
225: in a layer-by-layer fashion\cite{afm}, and that the carrier concentration depends
226: only on electric fields ($V_{G}$), and does not depend on the film thickness.
227: The observed conductance of TFT is the sum of the conductance of each layer,
228: which is parallel to the interface. The conductance of each layer can be,
229: thus, estimated by the first derivative of the total conductance
230: with respect to film thickness. Then, the carrier density of each layer
231: is determined by dividing the conductance of each layer by $\mu$.
232: Based on the assumption of layer growth, the mobility can be constant,
233: because mobility depends on morphology of the TFT\cite{9}.
234: The mobility is determined by the FET characteristics of the 20 nm
235: thick film (0.23 $cm^{2}V^{-1}s^{-1}$ for pentacene,
236: $2.5 \times 10 ^{-4}cm^{2}V^{-1}s^{-1}$ for 6T).
237:
238: Figures~\ref{fig3} and ~\ref{fig4} show the obtained distribution function
239: ($n(x)$) of carriers as a function of distance $x$ from the interface
240: for pentacene and 6T at various $V_{G}$.
241: The large carrier density at $V_{G}$=0 V in small $x$ region is
242: due to the charge transfer from the Au electrodes to the pentacene molecules \cite{10}.
243: By subtracting the carrier density $n_{0}(x)$ at $V_{G}$=0 V from
244: $n_{-15}(x)$ at $V_{G}$=-15 V, or $n_{-30}(x)$ at $V_{G}$=-30 V,
245: the carrier density injected by electric fields ($n_{i}(x)$) is obtained.
246: As seen in the figure, $n_{i}(x)$ decays steeply with increasing $x$,
247: meaning that the injected carriers are localized at the interface.
248: We could quantitatively determine the distribution function of carriers and the
249: accumulation layer thickness for organic TFT by the {\it in-situ} and continuous measurement.
250: It should be noticed that the above processes (differentiation, division by $\mu$)
251: can be validated only for the continuous measurement results,
252: in which the sample condition is kept unchanged.
253: Otherwise, for an individual sample, the condition changes from one sample
254: to another due to the difference in grain size, crystallinity, interface state, etc.
255:
256: For quantitative estimation on the accumulation layer thickness, $n_{i}(x)$ is fitted with an
257: exponential function ($f(x)=a \times exp(-x/b)$).
258: The fitted value of $b$ was 2($\pm$1) nm for pentacene and 9($\pm$5) nm for 6T
259: at both $V_{G}$=-15 V and -30 V \cite{11}.
260: Again, the value of $b$ was well reproduced for several experiments.
261: Here, $b$ can be considered as an effective accumulation layer thickness.
262: There are three points to note about the accumulation layer thickness ($d_{ac}$).
263: First, most of injected carriers are localized in a few ML next to the interface.
264: (1ML thickness: 1.5 nm for pentacene, 2.2 nm for 6T)
265: We could quantitatively show the localization of injected carrier at the interface by
266: experiments, while most previous works simply shows
267: that carriers were localized at the interface\cite{5}.
268: Second, $d_{ac}$ does not depend on gate voltages.
269: Third, $d_{ac}$ of pentacene is smaller than that of 6T.
270: In the following, we would discuss these gate voltage and chemical species dependence of the
271: accumulation layer thickness.
272:
273: First, we discuss the gate voltage dependence of the accumulation layer thickness.
274: In an ideal semiconductor, $d_{ac}$ is inversely proportional to $V_{G}$\cite{12}.
275: On the other hand, $d_{ac}$ of organic semiconductor pentacene and
276: 6T did not show gate voltage dependence in the present study.
277: The difference could be explained by the electron-electron repulsion,
278: the localized states in organic semiconductors, and geometry-related factors.
279: Electron-electron repulsion delocalizes the carriers, and leads to an increase in $d_{ac}$.
280: Since the repulsion force increases with carrier concentration (i.e. $V_{G}$),
281: a decrease of $d_{ac}$ could be compensated with an increasing $V_{G}$.
282: This causes little $V_{G}$ dependence.
283: On the other hand, $V_{G}$ dependence in an ideal semiconductor assumes
284: the parabolic density of states for the conduction band.
285: In organic TFT, however, there is no long range order in the specimens.
286: Because of absence of the long range order,
287: the localized states with finite energy width are formed below the free
288: electron like conduction band. Therefore, the equations assuming parabolic DOS could not be
289: applicable to the organic TFT, and $d_{ac}$ was not inversely proportional to $V_{G}$.
290: The geometry-related factors can also explain the experimental results.
291: There are many grain boundaries in the growth film,
292: and these grain boundaries and defects would affect the charge
293: injection. Therefore, the equations assuming a perfect semiconductor crystal
294: could not be applicable to the organic FET.
295: Although we present some explanation of the little gate voltage dependence of
296: the accumulation layer thickness, we can not present decisive one at present.
297:
298:
299: Second, the chemical species dependence of the accumulation thickness is discussed.
300: For p-type organic semiconductors, holes are injected
301: in the highest occupied molecular orbital (HOMO) of the semiconductor,
302: and thus, $d_{ac}$ reflects the spatial distribution of HOMO.
303: On the other hand, both pentacene and 6T are $\pi$-conjugated molecules,
304: and their HOMOs spread in the whole molecules.
305: Therefore, the molecular size should be taken into account to discuss $d_{ac}$. Since the
306: molecular size of 6T is larger than that of pentacene,
307: $d_{ac}$ of 6T was larger than that of pentacene.
308: Besides the molecular size, another factors, such as difference in dielectric constant,
309: intrinsic carrier density, could cause the difference in $d_{ac}$\cite{13}.
310:
311: Here we estimate the amount of carriers injected by electric fields at the first layer,
312: in order to obtain a guide to the electric fields control of physical properties.
313: Since the distribution function of the injected carrier can be represented by
314: $f(x)$=$a \times exp(-x/b)$, the amount of carriers in the first
315: layer is obtained by integrating $f(x)$ from 0 to the thickness of 1 ML
316: (1.5 nm for pentacene, 2.2 nm for 6T ).
317: The amount of the injected carriers was $6.1 \times 10^{11}cm^{-2}$ for pentacene
318: and $2.6 \times 10^{11}cm^{-2}$ for 6T at $V_{G}$=-30 V.
319: One carrier was injected every 350 (810) pentacene (6T) molecules at $V_{G}$=-30 V.
320: In most of previous studies, the amount of injected carriers per each molecule was estimated
321: assuming that carrier were localized at the first layer.
322: In the present work. however, distribution of injected carriers were estimated,
323: showing that they were not necessarily localized at the first layer.
324: The present result can be, thus,
325: a guide to control of physical properties by electric fields.
326:
327: In the present study, the {\it in-situ} and continuous measurement was applied to organic
328: semiconductor, in order to quantitatively determine the thickness
329: of the depletion and accumulation layers.
330: As discussed in the previous section, layer growth is essential to the present method.
331: The reason why we studied organic semiconductors,
332: is just that they do not need high substrate temperature to obtain flat films,
333: in contrast with the inorganic semiconductor which needs high substrate temperature.
334: Only if we can prepare flat films at low substrate temperature, the present
335: method can be applied to inorganic semiconductor to estimate
336: the thickness of the depletion and accumulation layers,
337: and distribution function of the injected carriers.
338:
339: Finally, we comment the control of physical properties by electric fields.
340: Since carriers reside in a few ML from the semiconductor/insulator interface,
341: the physical properties only at the interface could be controlled by the charge injection.
342: This implies the importance of a well-ordered interface
343: through which charges are efficiently injected.
344: Furthermore, we propose that the semiconductor-metal or -superconductor transition
345: is a promising target to study. When the
346: semiconductors change into metal phase by field induced charge injection,
347: metallic and semiconducting regions sit side by side
348: with only an atomic distance apart in the organic film.
349: Under this situation, free carriers can interact with exciton,
350: associated with the semiconductor, at the interface.
351: Ginzburg {\it et al.}\cite{14} proposed the possibility of superconductivity by exciton
352: mechanism at metal/semiconductor interfaces.
353: They discussed that the coexistence (in real space) of
354: excitons and metallic carriers would make it possible interface superconductivity.
355: Therefore, the situation realized at interface thus leads a possible ground
356: for superconductivity by exciton mechanism.
357:
358: \section{CONCLUSIONS}
359: \label{sec4}
360: We present the {\it in-situ} and continuous measurement of the conductivity
361: of growing organic films, as a simple but powerful method to determine
362: the distribution curve of injected carriers and the
363: dimension of the accumulation and depletion layers.
364: The depletion layer thickness could be directly
365: determined as a shift of the threshold thickness at which electric current began to flow.
366: The {\it in-situ} and continuous measurement
367: could also determine qualitatively the accumulation layer thickness
368: together with the distribution function of injected carriers.
369: The accumulation layer thcikness was 2 nm for pentacene and 9 nm for 6T.
370: The accumulation layer thickness did not depend on gate voltages,
371: rather depended on the chemical species.
372:
373: \acknowledgments{This work was supported by the Grant-in-Aid
374: from the Ministry of Education, Culture, Sports,
375: Science and Technology of Japan (14GS0207).}
376:
377: \begin{references}
378:
379:
380: \bibitem{1}S.M. Sze, Physics of Semiconductor Devices (John Wiley and Sons, New York, 1985)
381: \bibitem{2}H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl,
382: Y. Ohno and K. Ohtani, Nature {\bf 408} (2000) 944.
383: \bibitem{3}C. H. Ahn, S. Gariglio, P. Paruch, T. Tybell, L. Antognazza, and J.-M. Triscone,
384: Science {\bf 284} (1999) 1152.
385: \bibitem{4}The depletion layer thickness can be indirectly determined by the capacitance measurement.
386: When the depletion layer is formed at the semiconductor/insulator interface, the capacitance of the system
387: is $ C_{i}C_{d}/(C_{i}+C_{d})$, where $C_{i}$ and $C_{d}$ are the capacitance of the insulating and deletion layers.
388: The capacitance of the depletion layer is determined using the known capacitance of the insulating layer.
389: Therefore, the depletion layer thickness ($L_{d}$) can be determined by equation $L_{d}=\epsilon/C_{i}$,
390: where $\epsilon$ is the dielectric constant of the semiconductor.
391: On the other hand, the accumulation layer thickness is hard to be determined.
392: In most of previous studies of organic FET, it is assumed that the whole charge (=$C_{i}V_{G}$)
393: is injected only in the first layer at the interface.
394: \bibitem{5}A. Dodabalapur, L. Torsi, and H.E. Katz, Science {\bf 268} (1995) 270.
395: \bibitem{6}M. Kiguchi, M. Nakayama, K. Fujiwara, K. Ueno, T. Shimada and K. Saiki,
396: Jpn. J. Appl. Phys.,
397: {\bf 42} (2003) L1408.
398: \bibitem{7} We have measured the morphology of the film by atomic force microscopy (AFM).
399: For the 0.7 nm thick film, the first monolayer pentacene molecules covered
400: the SiO$_{2}$ substrate completely with their molecular long axes parallel to
401: the surface ("lying"), and some molecules grew on the first layer with their molecular
402: long axes normal to the surface ("standing"); M. Nakayama, M. Kiguchi, K. Saiki,
403: unpublished results.
404: \bibitem{8}E.H. Rhoderick, Monographs in electriccal and electronic engineering.
405: Metal-semiconductor contacts. (Clarendon press, Oxford, UK 1978)
406: \bibitem{afm} This assumption is supported by the AFM results.
407: The film nearly covered the substrate completely, although there were some grain boundaries.
408: Furthermore the deviation of height in the island was about 2 nm,
409: which corresponded to 1 monolayer thickness. These experimental results supports
410: that the nearly ideal layer growth occurred under the present growth condition.
411: \bibitem{9}T. Komoda, Y. Endo, K. Kyuno and A. Toriumi,
412: Jpn. J. Appl. Phys. {\bf 41} (2002) 2767.
413: \bibitem{10}R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, A. F. Hebard,
414: and R. M. Fleming,
415: Appl. Phys. Lett. {\bf 67} (1995) 121.
416: \bibitem{11}The carrier density ($n(x)$) could be also obtained
417: by dividing the local conductance by the mobility $\mu _{f}(x)$,
418: which is determined from the FET characteristics at each film thickness.
419: In this case, $b$ is 0.86 nm at -15 V, and 0.91 nm at -30 V for pentacene,
420: $b$ is 3.4 nm at -15 V, and 3.9 nm at -30 V for 6T,
421: which are smaller than $b$ in the text. In determining $\mu _{f}$,
422: the carriers($Q=CV$) are assumed to be completely injected
423: even for an ultra thin film. The injected carriers are, thus,
424: overestimated, leading to underestimation of $\mu _{f}$.
425: On the other hand, constant mobility ($\mu _{c}$) in the text overestimates
426: the mobility especially in the thin film region. Therefore, the true mobility is
427: between $\mu _{f}$ and $\mu _{c}$, and the true $b$ is between those estimated
428: from $\mu _{f}$ and $\mu _{c}$.
429: The main topic of the present work is based on the fact that $b$ does not depend on $V_{G}$,
430: which was commonly observed in both cases.
431: Therefore, the discussion in the text was not affected by choice of $\mu$.
432: \bibitem{12}G. Horowitz, M.E. Hajlaoui, and R. Hajlaoui, J. Appl. Phys. {\bf 87} (2000) 4456.
433: \bibitem{13}The carrier density is represented as $p=n_{i}exp((E_{i}-E_{F})/kT)$,
434: where $n_{i}$, $E_{i}$, $E_{F}$ are intrinsic carrier density,
435: intrinsic Fermi level, and Fermi level. Since the carrier density changes exponentially
436: with the energy difference between intrinsic Fermi level and Fermi level,
437: the small difference in the band bending would lead to large difference
438: in distribution function of carriers. The band
439: bending depends on dielectric constant of semiconductors.
440: \bibitem{14}Ginzburg, V.L. and Kirzhnits, D.A
441: High-Temperature Superconductivity (Consultants Bureau, New York, 1982).
442:
443: \end{references}
444:
445: \begin{figure}
446: \begin{center}
447: \leavevmode\epsfysize=40mm \epsfbox{fig1.eps}
448: \caption{Schematic sample layout. The source (S)-drain (D) current was
449: measured {\it in-situ} at various gate voltages.}
450: \label{fig1}
451: \end{center}
452: \end{figure}
453:
454: \begin{figure}
455: \begin{center}
456: \leavevmode\epsfysize=50mm \epsfbox{fig2.eps}
457: \caption{Source-drain current ($I_{SD}$) of pentacene and 6T measured
458: as a function of film thickness at various gate voltages ($V_{G}$).
459: Source-drain voltage was kept at 1 V. The dotted line is guideline to
460: obtain the threshold thickness.}
461: \label{fig2}
462: \end{center}
463: \end{figure}
464:
465: \begin{figure}
466: \begin{center}
467: \leavevmode\epsfysize=60mm \epsfbox{fig3.eps}
468: \caption{(a) Carrier density ($n(x)$) of pentacene as a function of the distance ($x$)
469: from the interface at various gate voltages ($V_{G}$);
470: $V_{G}$=-30 V(down-triangle), -15 V(upper-triangle), 0 V(circle).
471: (b) The difference ($n_{i}(x)$) between charge carrier density at $V_{G}$=-15 V or -30 V
472: and that at $V_{G}$=0 V.}
473: \label{fig3}
474: \end{center}
475: \end{figure}
476:
477: \begin{figure}
478: \begin{center}
479: \leavevmode\epsfysize=60mm \epsfbox{fig4.eps}
480: \caption{ (a) Carrier density ($n(x)$) of 6T as a function of the distance ($x$)
481: from the interface at various gate voltages ($V_{G}$); $V_{G}$=-30 V(down-triangle),
482: -15 V(upper-triangle), 0 V(circle). (b) The difference
483: ($n_{i}(x)$) between charge carrier density at $V_{G}$=-15 V or -30 V
484: and that at $V_{G}$=0 V.}
485: \label{fig4}
486: \end{center}
487: \end{figure}
488:
489:
490: \end{multicols}
491: \end{document}
492:
493:
494: