1: \begin{abstract}

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3: Several different approaches are proposed for solving fully implicit discretizations of a simplified Boltzmann-Poisson system with a linear relaxation-type collision kernel.  This system models the evolution of free electrons in semiconductor devices under a low-density assumption.

4: At each implicit time step, the discretized system is formulated as a fixed-point problem, which can then be solved with a variety of methods.  A key algorithmic component in all the approaches considered here is a recently developed sweeping algorithm for Vlasov-Poisson systems.

5: A synthetic acceleration scheme has been implemented to accelerate the convergence of iterative solvers by using the solution to a drift-diffusion equation as a preconditioner. %when the electron mean-free-path is small.

6: The performance of four iterative solvers and their accelerated variants has been compared on problems modeling semiconductor devices with various electron mean-free-path. 

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8: \end{abstract}

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