1: \begin{abstract}

2:  Tuning physical properties of transition metal dichalcogenide (TMD) monolayers  by strain engineering have most widely studied, and recently

3:  Janus TMD monolayer MoSSe  has been synthesized.

4: In this work, we systematically study biaxial strain dependence of electronic structures and  transport properties of Janus TMD  MXY (M = Mo or W, X/Y = S, Se, or Te) monolayer by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC). It is found that SOC has a noteworthy detrimental influence on  power factor  in  p-type MoSSe, WSSe, n-type WSTe, p-type MoSeTe and WSeTe, and has a negligible influence on one in n-type MoSSe, MoSTe,  p-type WSTe and n-type MoSeTe. These can be understood by  considering SOC  effects on their  valence and conduction bands. For all six monolayers, the energy band gap firstly increases, and then decreases, when strain changes from compressive one to tensile one. It is found that strain can tune strength of bands convergence of both valence and conduction  bands by changing the numbers and relative position of valence band extrema (VBE) or conduction band extrema (CBE), which can produce   very important effects on their electronic transport properties.

5: By applying appropriate compressive or tensile strain, both  n- or p-type Seebeck coefficient   can be enhanced  by  strain-induced  band convergence, and then the power factor can be improved. Our works further enrich studies on  strain dependence of electronic structures and  transport properties of new-style TMD monolayers, and motivate farther experimental works.

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11: \end{abstract}

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