1: \begin{abstract}

2:  Biaxial strain  effects on electronic structures and  thermoelectric properties of   monolayer $\mathrm{PtTe_2}$ are investigated by using  generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for the electron part and GGA for

3: the phonon part. Calculated results show that small compressive strain (about -3\%) can induce semiconductor-to-metal transition, which can easily be achieved in experiment. The conduction bands convergence is observed for unstrained $\mathrm{PtTe_2}$, which can be removed by both compressive and tensile strains.  Tensile strain can give rise to valence bands convergence by changing  the position of  valence band maximum (VBM), which can induce enhanced Seebeck coefficient, being favorable for high power factor. It is found that tensile strain can also reduce lattice thermal conductivity, which  at the strain of 4\% can decrease by about 19\% compared to unstrained one  at room temperature. By considering tensile strain effects on $ZT_e$ and lattice thermal conductivity, tensile strain indeed can improve p-type  efficiency of thermoelectric conversion. Our results demonstrate the potential of  strain engineering in  $\mathrm{PtTe_2}$ for applications in  electronics and thermoelectricity.

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5: \end{abstract}

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