1: \begin{abstract}

2: 

3: This work considers the behavior of the height distributions of the

4: equipotential lines in a region confined by two interfaces: a

5: cathode with an irregular interface and a distant flat anode. Both

6: boundaries, which are maintained at distinct and constant potential

7: values, are assumed to be conductors. The morphology of the cathode

8: interface results from the deposit of $2 \times 10^{4}$ monolayers

9: that are produced using a single competitive growth model based on

10: the rules of the Restricted Solid on Solid and Ballistic Deposition

11: models, both of which belong to the Kadar-Parisi-Zhang (KPZ)

12: universality class. At each time step, these rules are selected with

13: probability $p$ and $q = 1 - p$. For several irregular profiles that

14: depend on $p$, a family of equipotential lines is evaluated. The

15: lines are characterized by the skewness and kurtosis of the height

16: distribution. The results indicate that the skewness of the

17: equipotential line increases when they approach the flat anode, and

18: this increase has a non-trivial convergence to a delta distribution

19: that characterizes the equipotential line in a uniform electric

20: field. The morphology of the equipotential lines is discussed; the

21: discussion emphasizes their features for different ranges of $p$

22: that correspond to positive, null and negative values of the

23: coefficient of the non-linear term in the KPZ equation.

24: \end{abstract}