1: \begin{abstract}

2: Carrier mobility is one of the defining properties of semiconductors.

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4: Significant progress on parameter-free calculations of carrier mobilities in real materials has been made during the past decade; however,

5: the role of various approximations remains unclear and a unified methodology is lacking.

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7: Here, we present and analyse a comprehensive and efficient approach to compute the intrinsic, phonon-limited drift and Hall carrier mobilities of semiconductors, within the framework of the first-principles Boltzmann transport equation.

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9: The methodology exploits a novel approach for estimating quadrupole tensors and including them in the electron-phonon interactions, and capitalises on a rigorous and efficient procedure for numerical convergence.

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11: The accuracy reached in this work allows to assess common approximations, including the role of exchange and correlation functionals, spin-orbit coupling, pseudopotentials, Wannier interpolation, Brillouin-zone sampling, dipole and quadrupole corrections, and the relaxation-time approximation.

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13: A detailed analysis is showcased on ten prototypical semiconductors, namely diamond, silicon, GaAs, 3C-SiC, AlP, GaP, c-BN, AlAs, AlSb, and SrO.

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15: By comparing this extensive dataset with available experimental data, we explore the intrinsic nature of phonon-limited carrier transport and magnetotransport phenomena in these compounds.

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17: We find that the most accurate calculations predict Hall mobilities up to a factor of two larger than experimental data;

18: this could point to promising experimental improvements in the samples quality, or to the limitations of density-function theory in predicting the

19: carrier effective masses and overscreening the electron-phonon matrix elements.

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21: By setting tight standards for reliability and reproducibility, the present work aims to facilitate validation and verification of data and software towards predictive calculations of transport phenomena in semiconductors.

22: \end{abstract}

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