1: \begin{abstract}

2: \textit{Ab initio} instanton rate theory is a computational method

3: for rigorously including tunnelling effects into calculations

4: of chemical reaction rates

5: based on a potential-energy surface computed on the fly from electronic-structure theory.

6: This approach is necessary to extend conventional transition-state theory into the deep-tunnelling regime,

7: but is also more computationally expensive as it requires many more \textit{ab initio} calculations.

8: We propose an approach which uses Gaussian process regression to fit the potential-energy surface locally around the dominant tunnelling pathway.

9: The method can be converged to give the same result as from an on-the-fly \textit{ab initio} instanton calculation

10: but requires far fewer electronic-structure calculations.

11: This makes it a practical approach for obtaining accurate rate constants based on high-level electronic-structure methods.

12: We show fast convergence to reproduce benchmark \ce{H + CH4} results

13: and evaluate new low-temperature rates of \ce{H + C2H6} in full dimensionality at a UCCSD(T)-F12b/cc-pVTZ-F12 level.

14: \end{abstract}

15: