1: \begin{abstract}

2:  \textbf{Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5~nm and greater using sophisticated tools such as \mbox{X-ray} diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, \textit{e.g.} atomically thin dopant layers (\mbox{$\delta$-layers}), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging. 

3:  Here, we present theory and experiment showing how resonant-contrast \mbox{X-ray} reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the \mbox{X-ray} energy. 

4: We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $\delta$-layers within silicon, and show that the sub-nm electronic thickness of the \mbox{$\delta$-layers} corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices.

5: Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates.}

6: \end{abstract}

7: