1: \begin{abstract}

2: Binding energies of negative and positive trions in doped GaAs 

3: quantum wells in high magnetic fields are studied by exact 

4: numerical diagonalization in spherical geometry.

5: Compared to earlier calculations, finite width of the quantum 

6: well and its asymmetry caused by one-sided doping are both 

7: fully taken into account by using self-consistent subband wave 

8: functions in the integration of Coulomb matrix elements, and 

9: by inclusion of higher subbands along with several Landau levels 

10: in the Hilbert space.

11: Detailed analysis of the accuracy and convergence of the exact 

12: diagonalization scheme is presented, including dependence on 

13: Landau level and subband mixing, sensitivity to the (not well 

14: known) single-particle spectrum in the valence band, and the 

15: estimate of finite-size errors.

16: The main results are the exciton dispersion and trion binding 

17: energy spectrum calculated as a function of the magnetic field, 

18: quantum well width, electron concentration, and the presence 

19: of an ionized impurity.

20: As a complementary approach, a combination of the exact 

21: diagonalization in the quantum well plane and the variational 

22: calculation in the normal direction is used as well.

23: \end{abstract}

24: