1: \begin{abstract}

2: We present a general numerical approach to construct local Kohn-Sham

3: potentials from orbital-dependent functionals within the all-electron

4: full-potential linearized augmented-plane-wave (FLAPW) method, in

5: which core and valence electrons are treated on an equal footing.

6: As a practical example, we present a treatment of the orbital-dependent

7: exact-exchange (EXX) energy and potential. A formulation in terms

8: of a mixed product basis, which is constructed from products of LAPW

9: basis functions, enables a solution of the optimized-effective-potential

10: (OEP) equation with standard numerical algebraic tools and without

11: shape approximations for the resulting potential. We find that the

12: mixed product and LAPW basis sets must be properly balanced to obtain

13: smooth and converged EXX potentials without spurious oscillations.

14: The construction and convergence of the exchange potential is analyzed

15: in detail for diamond. Our all-electron results for C, Si, SiC, Ge,

16: GaAs semiconductors as well as Ne and Ar noble-gas solids are in very

17: favorable agreement with plane-wave pseudopotential calculations.

18: This confirms the adequacy of the pseudopotential approximation in

19: the context of the EXX-OEP formalism and clarifies a previous contradiction

20: between FLAPW and pseudopotential results.

21: \end{abstract}

22: