physics0606037/hep.tex
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49: \date{}
50: \begin{document}
51: \title{Scintillator counters with multi-pixel avalanche 
52: photodiode  readout for the ND280 detector of the T2K experiment}
53: \author{O.~Mineev$^a$\thanks{Corresponding author.
54: {\it Email address:} oleg@inr.ru}, A.~Afanasjev$^a$, G.~Bondarenko$^b$,
55: V.~Golovin$^b$, E.~Gushchin$^a$,\\  
56: A.~Izmailov$^a$,  M.~Khabibullin$^a$, A.~Khotjantsev$^a$, Yu.~Kudenko$^a$, \\
57: Y.~Kurimoto$^c$, T.~Kutter$^d$, B.~Lubsandorzhiev$^a$, 
58: V.~Mayatski$^e$,  \\ 
59: Yu.~Musienko$^a$, T.~Nakaya$^c$,  T.~Nobuhara$^c$, B.A.J.~Shaibonov$^a$, \\
60:  A.~Shaikhiev$^a$,  M.~Taguchi$^c$,   N.~Yershov$^a$, M.~Yokoyama$^c$ \\ 
61:  {} \\
62: $^a${\it Institute for Nuclear Research RAS, 117312 Moscow, Russia} \\ 
63: $^b${\it Center of Perspective Technology and Apparatus,
64: 107076 Moscow, Russia} \\
65: $^c${\it Department of Physics, Kyoto University, Kyoto 606-8502, Japan} \\
66: $^d${\it Department of Physics and Astronomy, Louisiana State University} \\
67: {\it Baton Rouge, Louisiana 70803-4001, USA} \\
68: $^e${\it AO Uniplast, 600016 Vladimir, Russia}}
69: \maketitle
70: \begin{abstract} 
71: The Tokai--to--Kamioka (T2K) experiment is a second generation 
72: long baseline neutrino oscillation experiment which  aims at a sensitive 
73: search for the $\nu_e$ appearance. The main design
74: features of the T2K near neutrino detectors located at 280 m from the target are 
75: presented. Scintillator counters  developed for the T2K near detectors 
76: are described. Readout of the counters is provided via WLS fibers embedded into S--shape grooves 
77: in a scintillator and viewed from both ends by  multi--pixel avalanche
78: photodiodes operating in a limited Geiger mode. A description, operational
79: principles and the results of  tests of photosensors with a sensitive area of 
80: 1.1 mm$^2$ are presented. 
81: A time resolution of 1.5 ns, a spatial resolution of 9.9--12.4 cm, and 
82: a  MIP detection efficiency of  more than 99\% were obtained for scintillator 
83: detectors in a  beam test. 
84: \end{abstract}
85: ~\\
86: %{\it Key words}: neutrino detectors, scintillator/WLS counters, multi--pixel 
87: %avalanche photodiodes  \\
88: %{\it PACS:} 29.40.Wk; 29.40 Mc; 29.40.Wj
89: 
90: 
91: \section{Introduction}
92: The T2K project~\cite{t2k} is a second generation long baseline neutrino 
93: oscillation
94: experiment which will use a high intensity  off--axis neutrino beam produced 
95: by the JPARC 50 GeV (initially 40 GeV) proton beam. The first phase of the
96: T2K experiment   pursues two main goals: a sensitive 
97: measurement of ${\rm\theta}_{13}$  and  a more accurate determination of the 
98: parameters ${\rm sin^22\theta}_{23}$ and $\Delta m^2_{23}$ than any previous
99: experiment.
100: 
101: To achieve the physics goals, it is important to provide precise measurements 
102: of the neutrino beam properties, neutrino flux, spectrum and 
103: interaction cross sections. For these purposes, the near detector complex
104: (ND280~\cite{nd280})  will 
105: be built at the distance of 280 m from the target along the line between the average pion 
106: decay point and the Super-Kamiokande detector. In order to keep the systematics
107: uncertainties below the statistical error, the physics requirements for ND280, 
108: discussed in detail in Ref.~\cite{nd280}, can be briefly summarized as 
109: follows. The energy scale of the neutrino spectrum 
110: must
111: be understood at the 2\% level, and the neutrino flux should be monitored with 
112: better than 5\% accuracy. The  momentum resolution of muons from the 
113: charged current
114: quasi--elastic interactions should be less than 10\%, and the threshold for 
115: the
116: detection of the recoil protons  is required to be about 200~MeV/c. The 
117: $\nu_e$ fraction is to be measured with an uncertainty of better than 10\%.
118: The measurement of  the neutrino 
119: beam direction with precision much better than 1 mrad is expected to be 
120: provided by the
121: on--axis detector (neutrino monitor).
122: The off--axis ND280 is shown in Fig.~\ref{fig:nd280}
123: \begin{figure}[htb]
124: \centering\includegraphics[width=11cm,angle=0]{nd2.eps}   
125: \caption{The cutaway view of the T2K  near detector.}
126: \label{fig:nd280}
127: \end{figure}
128: and consists of the UA1 magnet operated with a magnetic field of 0.2 T, 
129: a Pi-Zero detector (POD), a tracking detector which includes  time projection 
130: chambers (TPC's) and fine grained scintillator detectors (FGD's), an 
131: electromagnetic calorimeter
132: (Ecal), and a side muon range detector (SMRD).
133: 
134:  The POD has been designed to be similar to the  
135:  MINER$\nu$A detector~\cite{minerva}.
136: It is installed in the upstream end of the magnet and 
137: optimized for measurement of the inclusive  $\pi^0$ production by 
138: $\nu_{\mu}$ on oxygen.  The POD consists of 76 tracking planes  composed of 
139: triangular polystyrene  scintillating bars (about $2\times 10^4$) alternating 
140: with 
141: thin (0.6 mm) lead foils. Each bar has a 3 cm base, 1.5 cm height and 
142: a central  hole for a WLS fiber.  Three TPC's will measure the 3--momenta of 
143: muons produced by charged current interactions in the detector  and will 
144: provide the 
145: most accurate measurements of the neutrino energy spectrum. The ND280 will 
146: contain two FGD's, each 
147: with dimensions $2\times 2\times 0.3$ m$^3$ resulting in a  total target mass 
148: of 1.2 tons.  
149: The first FGD will be an active scintillator detector, similar to the 
150: SciBar~\cite{scibar} detector of the K2K experiment~\cite{k2k}.
151: Each FGD layer  will
152: consist of 200 scintillator bars, and thirty layers will be  arranged 
153: in alternating vertical and horizontal layers perpendicular to the beam
154: direction.   The second FGD will consists of 
155: $x - y$ layers scintillator bars alternating with 3 cm thick layers of passive
156: water.  The Ecal surrounds the POD and 
157: tracking region and consists of 15 layers, each
158: of which has one sheet of 3 mm Pb alloy and one layer of 1 cm thick $\times$ 
159: 5 cm wide 
160: plastic scintillator bars (with signal readout by WLS fibers). Interior to this
161: section is the preradiator section, where each of the 3 layers consists of a
162: lead alloy sheet backed by 3 layers of scintillator bars. Air gaps in the 
163: UA1 magnet will be instrumented with plastic scintillator to measure the ranges
164: of muons which escape at large angles with respect to the neutrino 
165: beam and which can not be measured by the TPC's. The active component of the 
166: SMRD will use scintillators  with wavelength shifting fibers~(WLS) readout 
167: to transport the light into photosensors.
168: 
169: The ND280 detector will widely use WLS fiber readout with light
170: detection   from fibers by photosensors which have to operate 
171: in a magnetic field environment and  limited  space inside the UA1 magnet. The primary candidate
172: for the photosensor is the multi--pixel avalanche photo-diode operating in the 
173: limited Geiger multiplication mode~\cite{dev1,dev2,dev3,dev4}. Such photodiodes 
174: are compact, well matched to spectral emission of WLS fibers, and insensitive 
175: to magnetic fields~\cite{andreev,beznosko}.
176: 
177:  
178: \section{Geiger mode multi--pixel avalanche photodiodes }
179: \subsection{Overview}
180: The  
181: multi-pixel avalanche photodiodes  with a  metal--resistor--semiconductor 
182: layer  structure  operating in the limited Geiger mode 
183: (hereafter referred to as MRS APD's 
184: or MRS photodiodes) are invented and designed by the Center of Perspective
185: Technologies and Apparatus (CPTA), Moscow~\cite{dev1}. 
186: Detailed description of these devices and principles of operation 
187:  can be found in Refs.~\cite{dev-dop,dev3,si1}.
188: Such a  photosensor  consists of many pixels on a common p--type silicon 
189: substrate. A simplified topology of a MRS photodiode is shown in 
190: Fig.~\ref{fig:scheme_mrs}.
191: \begin{figure}[htb]
192: \centering\includegraphics[width=15cm,angle=0]{topology.eps}   
193: \caption{The schematic view of the MRS photodiode structure.}
194: \label{fig:scheme_mrs}
195: \end{figure}
196:  Each pixel operates as an independent
197: Geiger micro-counter with a gain of the same order as a vacuum 
198: photomultiplier. Geiger discharge is initiated by a photoelectron in the 
199: high electric field created  in a very thin layer of about 
200: 1~$\mu$m by the applied  bias voltage.  
201: The discharge current for each pixel produces a voltage drop at  
202: individual  resistors. As a result, the electric field density 
203: becomes small and can no longer  support the discharge quenched in such a way.
204: Small pixels are separated by grooves filled with an optically non--transparent 
205: material to suppress the cross--talks. The gain is determined by the charge 
206: accumulated in a pixel capacitance: $Q_{pixel} = C_{pixel}\cdot\Delta V$, 
207: where $\Delta V$ is difference between the bias voltage and the breakdown 
208: voltage of the diode (overvoltage). Since $\Delta V$ is about a few volts and 
209: $C_{pixel}\simeq 50$ fF, then typical  $Q_{pixel}\simeq 150$ fC, that 
210: corresponds to $10^6$ electrons.  A single incident photon can fire more 
211: than one pixel. Thus, the gain of the MRS photodiode is equal to the charge 
212: of a pixel multiplied by the average number of pixels fired by a 
213: single photon. 
214: 
215: The amplitude of a single pixel signal does not depend on the triggered 
216: number of
217: carriers in this pixel. In such a way, the photodiode signal is a sum of 
218: fired pixels. Each pixel operates as a binary device, but the multi--pixel 
219: photodiode as a  whole unit is 
220: an analogue detector 
221: with a dynamic range limited by the finite number of pixels.  
222: %make clear:size, diam,octagonal etc
223: The pixel size can be $15\times 15$ to $70\times 70$~$\mu$m$^2$, and the total 
224: number of pixels 
225: is 100--4000 per mm$^2$. We tested the CPTA MRS photodiodes with a 
226: sensitive area of 1.1~mm$^2$ 
227: with 556 pixels of $45\times45~\mu {\rm m}^2$ size (see Fig.~\ref{fig:mrs}). 
228: \begin{figure}[htb]
229: \centering\includegraphics[width=14cm,angle=0]{MRS_small.eps}
230: \caption{Face view of a MRS avalanche photodiode with 556 pixels,  
231: magnified 56 times (left) and 14 times (right). The sensitive area has an 
232: octagonal shape with an 1.2 mm side--to--side distance.}
233: \label{fig:mrs} 
234: \end{figure}
235:  
236: 
237: %--------------------------------------------------------------- 
238: \subsection{Basic properties of the CPTA MRS photodiodes}
239: %--------------------------------------------------------------- 
240: 
241: The main parameters of the MRS photodiodes such as the  gain, photon detection 
242: efficiency, 
243: intrinsic noise, cross--talk, depend on the applied bias voltage. The MRS
244: photodiodes were tested using a signal from  a green light emitting diode 
245: (LED).  The MRS signal was amplified and split into two signals: 
246: one was fed to a discriminator, another was measured by an ADC with a 
247: gate of about 100 ns.
248: 
249: {\it Gain.}
250: A typical operating  voltage is around 40~V for the tested  MRS photodiodes, 
251: although the voltage can differ by 
252: a few volts to provide the same gain in photodiodes.
253: The MRS photodiode has an excellent single photoelectron~(p.e.) resolution 
254: determined mainly 
255: by electronics noise even at room temperature. It means that there is only
256: a small pixel 
257: to pixel gain variation as well as small fluctuations in Geiger discharge 
258: development. The  absolute gain 
259: depends on the photodiode topology, bias voltage and 
260: temperature. The voltage and temperature sensitivities of the MRS photodiode 
261: gain are rather weak as will 
262: be demonstrated  below.   A 0.1~V  change in 
263: bias voltage corresponds to a 2--3\% variation in gain.     The charge 
264: of a single p.e. signal in a calibrated ADC was used 
265: to determine the MRS photodiode gain.
266: The typical gain value   at room temperature 
267: (22$^{\circ}$C) is obtained 
268: to be about $0.5\times 10^6$. 
269: 
270: {\it Photon detection efficiency.} 
271: The  photon detection efficiency (PDE) of a multi-pixel avalanche photodiode 
272: operating in the limited Geiger mode  is a product of 3  factors:
273: \begin{equation}
274: {\rm PDE} = QE\cdot\varepsilon_{Geiger}\cdot\varepsilon_{pixel},
275: \label{eq:pde}
276: \end{equation}
277:  where $QE$ is the 
278: wavelength 
279: dependent quantum efficiency, 
280: $\varepsilon_{Geiger}$ is the probability for a photoelectron to initiate the 
281: Geiger discharge, 
282: $\varepsilon_{pixel}$ is a fraction of the total photodiode  area 
283: occupied by sensitive pixels.
284:  The  bias voltage affects 
285: one parameter  in expression~(\ref{eq:pde}) $\varepsilon_{Geiger}$.   
286: The geometrical factor $\varepsilon_{pixel}$ 
287: is  completely determined by the MRS photodiode topology. Its value is 
288: estimated to be about 
289: 70--80\% in  an ideal case.  The absolute value of the PDE was measured using 
290: small pulses from a  green LED (525 nm) which illuminated a MRS photodiode 
291: through  a 0.5 mm diameter collimator. The number of
292: emitted photons was obtained using a calibrated PMT XP2020. 
293: The  normalized PDE  values at 525~nm  for different bias voltages are 
294: presented in  Fig.~\ref{fig:pde}.
295: \begin{figure}[htb]
296: \centering\includegraphics[width=12cm,angle=0]{pde_darkrate.eps}
297: \caption{The photon detection efficiency, cross--talk and dark rate 
298: as a function of the applied bias voltage.}
299: \label{fig:pde} 
300: \end{figure}
301:  The cross-talk 
302: contribution was subtracted from the signal to obtain  the correct value 
303: of the PDE,  the accuracy of which is estimated to be  about 20\%.
304: As seen in  Fig.~\ref{fig:pde},  
305: the PDE is about 12\% at a dark rate of 1~MHz. 
306: The PDE can be increased up to almost 30\% at the expense of much higher dark
307: rate.   
308:  
309: The PDE dependence on the wavelength of the detected light, as well as the 
310: emission spectrum of the WLS fiber Y11  are 
311: shown in Fig.~\ref{fig:y11_sipm}. 
312: %------------------------
313: \begin{figure}[htb]
314: \centering\includegraphics[width=12cm,angle=0]{y11_sipm.eps}
315: \caption{Light emission spectrum of the Y11(150) fiber (from Kuraray 
316: plots~\cite{kuraray}) 
317: and the PDE of a  MRS photodiode.}
318: \label{fig:y11_sipm} 
319: \end{figure}
320: %------------------------
321:  The peak emission of the fiber depends on its length due to the absorption of 
322:  the light. The spectral response of a MRS photodiode  was measured 
323: in a spectrophotometer  calibrated with a PIN--diode~\cite{si3}.
324: The PDE was measured at higher  $V_{bias}$ and, therefore,   
325: the dark rate was higher (about 2.3 MHz  for a discriminator 
326: threshold of  0.5 p.e.).   
327: The PDE decreases by about 50\%  when  $V_{bias}$  is lowered such that 
328: the dark rate is   $\sim 1$ MHz. 
329: 
330: 
331: {\it Dark rate.}
332: The limiting factor for a wide application of   the MRS photodiodes in 
333: the readout of scintillators is the  dark noise rate 
334: which originates from 
335:   thermally created carriers in the depletion region under high electric
336: fields. The dark rate mainly consists of  single p.e. pulses. Larger amplitude 
337: pulses also contribute
338:  to the dark rate, as shown in Fig.~\ref{fig:dark-rate}. 
339: %------------------------
340: \begin{figure}[htb]
341: \centering\includegraphics[width=12cm,angle=0]{thr.eps}
342: \caption{Dark  rate vs the discriminator threshold for two bias voltages. 
343: The discriminator threshold values of 100, 300, and 500 mV correspond to 
344: 0.5 p.e., 1.5 p.e., and 2.5 p.e., respectively, for $V_{bias} = 38.2$~V. }
345: \label{fig:dark-rate} 
346: \end{figure}
347: %-----------------------ensity of 1~p.e. dark pulses is about 1 MHz for $V_{bias} = 38.2$ V. 
348: However,  
349: the intensity of the  pulses with 2 p.e. amplitudes is about 15 times   less 
350: than the intensity 
351: of the single p.e. pulses. Large amplitudes ($> 1$ p.e.) are generated by 
352: the optical 
353: cross-talk as well as by accidental pile-ups between the independent pixels, 
354: though the second 
355: effect is relatively small. The dark rate decreases  to the level of a few kHz 
356: for the threshold of 2.5 p.e.   The intensity of 
357: 1 p.e. pulses  as well as 2 p.e. pulses is significantly higher 
358: for higher bias voltage, as can be seen from Fig.~\ref{fig:dark-rate} in case 
359: of $V_{bias} = 39.8$~V. 
360: Dark pulses and mostly leakages create  the 
361: dark current through a MRS photodiode in
362:  a typical range of $0.3 - 1.0~\mu A$. 
363: The dark rate decreases to about 1~kHz/mm$^2$ at $-70^{\circ}$C, 
364: i.e. decreases by a factor of 
365:  2  for every temperature drop of  $9 - 10^{\circ}$C   for a threshold of 0.5 p.e. and 
366: and the  condition of keeping the gain   at a constant value by tuning 
367: the bias voltage.
368: 
369: 
370: {\it Optical cross--talk.}
371: A single incident photon can create more than a single p.e. due to 
372: optical cross--talk. The mechanism of this effect is not quite clear. 
373: Models predict that during the Geiger discharge and recombination of carriers 
374: infrared photons are emitted. These photons penetrate into the  adjacent pixels 
375: and fire them. Optical cross--talk leads to a higher than expected signal 
376: as Geiger discharge occur in additional pixels. 
377: The absolute value of the cross--talk can be calculated by assuming a  Poisson 
378: distribution for the number of photoelectrons observed in response 
379: to the light from a  LED. When the MRS 
380: photodiode noise is 
381: small, the measured mean number of fired pixels  by the LED photons, 
382: ${\bar N}_{LED}$, 
383: is  compared with the calculated value ${\bar N}_{pe}$   given by
384: \begin{equation}
385: {\bar N}_{pe} = - lnP(0), 
386: \label{eq:poisson}
387: \end{equation} 
388: where $P(0)$ is the fraction of 0 p.e., or ``pedestal'' events. Then
389: the deviation of the ratio ${\bar N}_{LED}/{\bar N}_{pe}$ from 1 
390:  gives the cross--talk value. These values are 
391:  presented for several bias voltages   in Fig.~\ref{fig:pde}.
392: A cross--talk value of  about 5\%  was 
393: obtained at a  bias voltage that provides a dark noise rate of 
394: $\leq 1$ MHz 
395: at a discriminator threshold of 0.5 p.e.  The cross--talk  is larger for 
396: higher bias voltage. The sharp decrease of the dark rate shown in 
397: Fig.~\ref{fig:dark-rate} is a good 
398: demonstration of the low optical  cross--talk. It should be noted that 
399: the signal amplitude  in photoelectrons is less than  the measured 
400: amplitude determined 
401: as  the average number of fired pixels by the cross-talk value, 
402: i.e. by a few per cent.
403:  
404: {\it Temperature dependence.}
405: The PDE and gain of MRS photodiodes (as well as the  signal amplitude) 
406: are expected to be
407: sensitive to temperature because the breakdown voltage   depends on
408: temperature. The MRS signal amplitude (light yield) is proportional to 
409: $N_{\rm photons}\times 
410: {\rm PDE}\times {\rm gain}$, where  $N_{\rm photons}$ is the number of photons 
411: from the  LED which illuminate the photodiode.
412: The parameters of the MRS photodiodes  were measured over temperatures 
413: from 15$^{\circ}$ to 33$^{\circ}$C.  The temperature variation of 
414: the  MRS signal (a green LED was used as a light source)
415: is presented in Fig.~\ref{fig:signal_gain_temp}.
416: \begin{figure}[htb]
417: \centering\includegraphics[width=12cm,angle=0]{signal_gain.eps}
418: \caption{The MRS  signal from a green LED  and gain as a function of   
419: the ambient air temperature.}
420: \label{fig:signal_gain_temp} 
421: \end{figure}
422: %------------------------
423:  The  MRS signal   dependency of -1.5~\%/$^{\circ}$C is obtained for 
424:  increasing temperature.
425:  The MRS gain itself  decreases with temperature as   -1.2~\%/$^{\circ}$C 
426:  (see Fig.~\ref{fig:signal_gain_temp}), while the PDE varies with temperature 
427:  as -0.3~\%/$^{\circ}$C.
428:  The  dark rate  depends on temperature with a coefficient  of 
429:  62 kHz/$^{\circ}$C, as shown in Fig.~\ref{fig:dark_temp}.
430: \begin{figure}[htb]
431: \centering\includegraphics[width=12cm,angle=0]{darkrate_temp.eps}
432: \caption{The  dark rate for threshold of 0.5 p.e. vs 
433: the  ambient air temperature.}
434: \label{fig:dark_temp} 
435: \end{figure}
436:   Decreasing the temperature
437: below $0^{\circ}$C greatly reduces the noise and increases the PDE, 
438: as shown in Ref.~\cite{si3}.
439: %------------------------
440: 
441: {\it Recovery time.}
442: The ability of MRS photodiodes to operate at high counting rates was tested 
443: using 
444: two LED signals. We measured the amplitude of the second signal $A_2(t)$ as a 
445: function of 
446: the time difference $t$ between the first and second  signal. 
447: Fig.~\ref{fig:recovery} shows the  ratio 
448: $A_2(t)/A_2(0)$, where $A_2(0)$ is the amplitude of the second signal when 
449: the first LED
450: signal is off.  
451: \begin{figure}[htb]
452: \centering\includegraphics[width=11cm,angle=0]{dead_time.eps}
453: \caption{The relative amplitude of the MRS delayed signal from a LED 
454:  as a function 
455: of the time difference between the first LED pulse and the second one. 
456: The   amplitude is 
457: normalized to its value when the first LED signal is off.   The
458: amplitudes of 
459: the first  signal are  50, 100, 300, 600 photoelectrons.}
460: \label{fig:recovery} 
461: \end{figure}
462: As seen from Figure 9, a minimum time interval between the first 
463: and second pulse of about 5 $\mu$s is needed 
464:  to recover about 95\% of the full amplitude 
465: of the second signal. This long recovery time is due to the fact that 
466: the individual 
467: resistor of each pixel, $R_{pixel}$, has the value of about 20 M$\Omega$, 
468: the pixel capacitance 
469: $C_{pixel}$ is 
470: typically 50 fF that gives $\tau = R_{pixel}\cdot C_{pixel} \sim 1 \mu$s. 
471:  
472: {\it Dynamic range and linearity.} 
473: The  dynamic range of the MRS photodiode is limited by the finite number of 
474: pixels. The saturation of the  MRS photodiode in response to large light signals 
475: is shown in Fig.~\ref{fig:nonlin}.  
476: %------------------------
477: \begin{figure}[htb]
478: \centering\includegraphics[width=12cm,angle=0]{nonlin_new.eps}
479: \caption{The MRS photodiode response vs the PMT signal. The signal of the 
480: MRS photodiode is saturated at the level of the maximum number of 
481:  556 pixels.}
482: \label{fig:nonlin} 
483: \end{figure}
484: %------------------------
485: In this test, the LED signal was ajusted to obtain similar 
486: response for both PMT and MRS photodiode at the light yield below 150 p.e. 
487: The photodiode
488: signal is linear for low amplitutes.  A nonlinearity of about 10\% is already
489: seen for a signal of 150--200~p.e. 
490: For the PMT signal of 500~p.e., the MRS photodiode has  
491:  a 30\%  smaller signal than that of the PMT. Full saturation of the 
492:  556 pixel MRS photodiode starts at a reference (PMT) signal of more 
493:  than  2000~p.e.  
494: 
495: 
496: {\it Timing.}
497: The development of the Geiger discharge in a small depth ($\sim 0.8~\mu m$) 
498: of the depletion region takes a few hundred picoseconds. The typical rise time 
499: is 1~ns, the decay time is
500: determined by the pixel capacitance.   A laser with a wavelength of 635~nm and 
501: a pulse width of 35~ps (fwhm) was used to measure  the intrinsic  time 
502: resolution of  1 p.e. pulses. Very weak laser light created only 
503: 1 p.e. signals in a MRS photodiode. The time resolution obtained for a 
504: threshold of 0.2 p.e.  at $22^{\circ}$C is presented in 
505: Fig.~\ref{fig:timing_mrs}. 
506: %------------------------
507: \begin{figure}[htb]
508: \centering\includegraphics[width=10cm,angle=0]{laser_timing.eps}
509: \caption{Time spectrum of  single photoelectron signals obtained by a MRS
510: photodiode at $22^{\circ}$C.}
511: \label{fig:timing_mrs} 
512: \end{figure}
513: %------------------------
514:  
515: {\it Life time.} 
516: The failure rate of the MRS photodiodes is an important figure of merit for 
517: the overall detector performance, because most photodiodes can not be 
518: replaced without significant 
519: disassembly of  the  ND280 detector.
520: Exposures to elevated temperature  are used to evaluate the expected life time of 
521: semiconductor devices. We have placed 19 MRS photodiodes  in an oven 
522: at 80$^{\circ}$C for 30 days. All photodiodes were kept under bias 
523: voltages to provide 
524: the same dark current as at  room temperature. One of the devices 
525: started to conduct a large current after a week of heating. 
526: The failed device had the worst PDE among of the tested 
527: devices. This points to a possible defect in its structure.  
528: All other devices   
529: passed the test without residual effects, and the LED signals  measured 
530: by these MRS diodes after a period of 30 days of elevated  
531: temperatures did not show any significant 
532: degradation. 
533: The  signals of the tested photodiodes  in response to a LED photons 
534: were measured before  the heating and  
535: for a period of about 260 days after the heating. The results for two 
536: devices  are presented  in  Fig.~\ref{fig:oven}. 
537: \begin{figure}[htb] 
538: \centering\includegraphics[width=15cm,angle=0]{long.eps}
539: \caption{Light yields  of two MRS photodiodes measured 
540: with a green LED before and after the heating test. The heat exposure 
541: at 80$^{\circ}$C lasted for 30 days. Successively, the photodiodes were 
542: monitored for 260 days. The signals were corrected for temperature 
543: changes in the range from $18 - 27^{\circ}$C. Each point has an error 
544: of $\pm 2.0$ p.e.}
545: \label{fig:oven} 
546: \end{figure}
547: The accuracy of the l.y. measurements is about 2.0 p.e.~(rms) due to 
548: misalignments between the fiber and the MRS photodiodes that are estimated to 
549: be between 20 and 100 $\mu$m in this series of tests.  
550: For more than  7 months after  heating no degradation in the light yield was observed.
551: 
552: Two hundred MRS photodiodes fabricated from a few different wafers were tested.
553: In order  to meet 
554: the requirements of the experiment, the dark rate of each device 
555: should be kept  close to
556: a reference 
557: value of   1 MHz at room temperature 
558: 22$^{\circ}$C and  for a  discriminator threshold of 0.5 p.e. 
559: This required the individual adjustment of the bias voltage of 38 
560: to 42.1~V for each 
561: photodiode, that in turn  resulted in  a wide 
562: range  of 8.9--18.8\% for the PDE values,  and the  
563: gains of these 200 MRS photodiodes were found to be between    
564: $0.34\times 10^6$ and  $0.69\times 10^6$.  
565: 
566:  
567:  %--------------------------------------------------------------- 
568: \section{Scintillator detectors with WLS fiber readout}
569: %--------------------------------------------------------------- 
570: %perepisatj etu chastj
571: 
572: Several subdetectors of  the T2K near detector complex will be composed 
573:  of many 
574: scintillator detectors: 
575: rectangular and triangular scintillator bars, and various scintillating 
576: slabs. 
577: All these elements use  embedded WLS fibers to read light from the 
578: scintillators. 
579: A well known design will be adopted  for  the  bars with WLS fibers: 
580: one straight hole or groove on one surface for a WLS fiber.  For large 
581: scintillator
582: slabs (SMRD,  active elements of Ecal), the usage of the standard readout 
583: scheme with 
584: several
585: equidistant WLS fibers which run along the slab is not appropriate due to 
586: mechanical constraints  of the UA1 magnet. 
587: %%dopisatj luchshe 
588: We consider   
589: extruded scintillator slabs with a double--ended WLS fiber readout technique as 
590: active elements for the SMRD detector. Instead of a few parallel  WLS fibers 
591:  we propose to use a single long WLS fiber embedded in an 
592: S--shape groove 
593: which reduces the maximum path length that light has to travel within 
594: the scintillator to a few  cm.  
595:  The detector prototypes   
596: were manufactured using an extrusion technique 
597: developed at the Uniplast Factory, Vladimir, Russia. The scintillator is 
598: etched by a chemical agent that results in the formation of a micropore 
599: deposit over the plastic surface. The thickness of the 
600: deposit (30--100 $\mu$m) depends on the etching 
601: time.   Details can be found in 
602: Ref.~\cite{extrusion}. 
603:   A scintillator slab of 1x17x87~cm$^3$  with an 
604: S--shaped groove  of 3~mm depth was  manufactured for a test in a pion/proton
605: beam. 
606: The half--period of the S--shape groove   
607:  is 58~mm, as shown in Fig.~\ref{fig:s-counter}. 
608: %------------------------
609: \begin{figure}[htb] 
610: \centering\includegraphics[width=11cm,angle=0]{s-counter_1.eps}
611: \caption{Scintillator slab with S--shaped fiber readout: photograph (left) and 
612: schematic view (right).}
613: \label{fig:s-counter} 
614: \end{figure}
615: %------------------------
616: A 2.55~m long multi--clad  Kuraray Y11 (200 ppm dopant) WLS fiber of 1~mm 
617: diameter is 
618: embedded into the groove with an optical grease and both ends are attached to 
619: MRS photodiodes. To avoid the 
620:  degradation of the Y11 parameters in real SMRD counters, the bending procedure to make 
621:  3 cm radius loops will be done at 
622:  the temperature of about 80$^{\circ}$C.    
623:  
624: This module was first tested with cosmic muons. 
625: A light yield (l.y.) of 16.4~p.e. was obtained for MIP's 
626: in the center for  summed signals from both photodiodes. In order 
627: to suppress the timing spread caused by the trigger counters the 
628: combination  $(TDC_{left} - TDC_{right})/2$ was used to measure the time
629: resolution.  A time resolution of $\sigma = 1.57 $ ns  was obtained 
630: for MIP's which passed through the central part of the slab.
631: 
632: 
633: %--------------------------------------------------------------- 
634: \section{Beam tests of the SMRD  prototype}
635: %--------------------------------------------------------------- 
636: \subsection{Beam test setup}
637: A beam test of extruded scintillators with embedded WLS fibers was performed 
638: at the KEK 12-GeV proton synchrotron 
639: with 1.4 GeV/c protons and pions. Two counters were placed in a beam and 
640: tested simultaneously. One was the S--grooved scintillator (S--counter) 
641: described in the previous section, another one was a scintillator 
642: slab,  1x18x50~cm$^3$ in size, with a single straight groove 
643: in the middle of the plastic (W--counter). An 1.11~m long Kuraray Y11(200) fiber 
644: of 1~mm 
645: diameter was
646: embedded with  optical grease  into the straight groove  of the 
647: W--counter. The fiber 
648: in each counter is viewed from  
649: both ends by  MRS photodiodes. The fibers  are 
650: directly coupled  to  photosensors  
651: inside special sockets. The  detectors were mounted on a
652: platform which could be moved horizontally and vertically with 
653: respect to the beam line. Upstream of the counters, a TOF system was used 
654: to separate pions and protons. Finger trigger counters restricted 
655: the beam spot size  to a  $10\times 10 {\rm mm}^2$ square.   The signals 
656: were amplified by 
657: fast hybrid preamps mounted 
658: directly  behind the photodiodes. The bias voltage was set individually for 
659: each MRS photodiode to limit the dark rate to about 1.2~MHz for a
660: 0.5 p.e. threshold. A simplified electronic diagram of the beam test setup is shown in 
661: Fig.~\ref{fig:electronics}. 
662: %------------------------
663: \begin{figure}[htb] 
664: \centering\includegraphics[width=13cm,angle=0]{electronics.eps}
665: \caption{The electronic readout diagram used in the beam test.}
666: \label{fig:electronics} 
667: \end{figure}
668: %------------------------------------------------------------------------------------
669: 
670: Only pions were selected for analysis as their response is close to that 
671: expected from MIP's in the T2K experiment. The ambient temperature 
672:  drifted between 15--18$^{\circ}$C during the beam 
673: test. Typical ADC spectra from pions are  
674: shown in Fig.~\ref{fig:spectra-vs-bias}. 
675: \begin{figure}[htb] 
676: \centering\includegraphics[width=12cm,angle=0]{bias_voltage.eps}
677: \caption{The spectra of 1.4 GeV/c pions measured at two bias voltages.}
678: \label{fig:spectra-vs-bias} 
679: \end{figure}
680: %-------------------------
681: In this 
682: Figure, one spectrum is obtained with a bias voltage of 
683: 38.7~V which corresponds to a  dark rate of 0.86~MHz for a
684: discriminator threshold of 0.5 p.e. The 
685: second spectrum is measured with a bias voltage of 40.9~V corresponding to
686: a dark rate of almost 2~MHz.
687: The individual photoelectron peaks are  clearly separated  at 38.7~V 
688: and still visible at 40.9~V. 
689: 
690: \subsection{Detection efficiency of MIP's}
691: %-------------------------------------------------------------------------------------
692: The light yield scan over the S--counter surface is presented in 
693: Table~\ref{table:s-ly}.  
694:  %------------------------
695: \begin{table}[htbp]
696: \caption{Light yield (p.e./MIP)  
697: over the S--counter.  Sum of the signals from  both ends.
698: The bias voltage of 38.7~V was applied to both MRS photodiodes.}
699: \vspace{.5cm}
700: \begin{center}
701: \begin{tabular}{|c|c|c|c|c|c|c|c|c|c|}
702: \hline
703:  ~~~$y$, mm & -80 & -60 & -40 & -20 & 0 & 20 & 40 & 60 & 80  \\
704: $x$, mm~~~  &\       &\      &\       &\     &\    &\  &\   &\   &\   \\
705: \hline
706: -406    & 6.3 & 11.9 & 13.2 & 16.0 & 17.8 & 18.6 & 18.7 & 18.8 & 13.8  \\
707: \hline
708: -319   & 10.2 & 11.6 & 14.7 & 15.7 & 15.9 & 16.4 & 17.3 & 16.7 & 13.2   \\
709: \hline
710: -200   & 10.2 & 12.7 & 14.3 & 16.0 & 15.5 & 16.6 & 18.2 & 18.7 & 15.0   \\
711: \hline
712: -87    & 10.4 & 11.7 & 13.0 & 15.0 & 15.0 & 15.4 & 16.3 & 14.5 & 11.0   \\
713: \hline
714: -30     & 8.8 & 14.4 & 16.4 & 16.2 & 15.3 & 14.6 & 13.8 & 12.9 & 10.9   \\
715: \hline
716: 0      & 11.0 & 12.9 & 14.8 & 14.3 & 15.3 & 16.2 & 14.9 & 13.9 & 11.7   \\ 
717: \hline
718: 30      & 9.3 & 11.8 & 12.6 & 14.4 & 14.8 & 15.8 & 16.8 & 16.0 & 13.0   \\
719: \hline
720: 87     & 12.3 & 14.4 & 15.1 & 14.6 & 14.2 & 14.7 & 14.2 & 12.9 & 11.8   \\
721: \hline
722: 200    & 11.0 & 15.2 & 16.0 & 15.9 & 15.6 & 15.5 & 13.7 & 12.9 & 11.3   \\
723: \hline
724: 319    & 12.6 & 16.1 & 17.4 & 16.3 & 15.5 & 15.2 & 14.5 & 12.3 & 10.4  \\
725: \hline
726: 406    & 11.8 & 12.9 & 17.9 & 19.9 & 20.0 & 19.1 & 19.1 & 16.2 & 11.9  \\
727: \hline
728: \end{tabular} 
729: \end{center}
730: \label{table:s-ly}  
731: \end{table}
732: %------------------------
733: The beam spot spreads beyond the scintillator area near the edges 
734: at $y = \pm 80$ mm 
735: causing the small l.y. values.  If the edges are ignored,  the light 
736: output over the 
737: S--counter (sum of both end signals) varies from 12 to 20~p.e./MIP. The largest l.y. 
738: is measured at the 
739: ends, close to either  of the two MRS photodiodes. In order to obtain 
740: the detection 
741: efficiency the ADC 
742: spectra were analyzed. The event is considered accepted  if its 
743: ADC amplitude exceeds a certain threshold set in number of p.e.  The 
744: average statistics 
745: in each location is about 2000 events.
746: Table~\ref{table:s-3}
747: \begin{table}[htbp]
748: \caption{Detection efficiency  over the S--counter for a threshold of 2.5 p.e.  
749: The bias voltage of 38.7~V was applied to both MRS photodiodes.}
750: \vspace{.5cm}
751: \begin{center}
752: \begin{tabular}{|c|c|c|c|c|c|c|c|c|c|}
753: \hline
754:  ~~~$y$, mm & -80 & -60 & -40 & -20 & 0 & 20 & 40 & 60 & 80  \\
755: $x$, mm~~~  &\       &\      &\       &\     &\    &\  &\   &\   &\   \\
756: \hline
757: -406    & 0.660 & 0.995 & 0.999 & 1.000 & 1.000 & 0.999 & 1.000 & 1.000 & 0.999 \\
758: \hline
759: -319   & 0.750 & 0.999 & 0.999 & 0.999 & 0.999 & 0.999 & 0.999 & 0.998 & 1.000   \\
760: \hline
761: -200   & 0.788 & 0.998 & 0.999 & 0.999 & 1.000 & 1.000 & 0.999 & 0.999 & 1.000   \\
762: \hline
763: -87    & 0.839 & 0.996 & 0.998 & 0.999 & 1.000 & 0.999 & 1.000 & 0.999 & 0.995  \\
764: \hline
765: -30     & 0.886 & 0.999 & 0.999 & 1.000 & 1.000 & 0.999 & 1.000 & 0.997 & 0.998   \\
766: \hline
767: 0      & 0.985 & 0.998 & 0.997 & 0.998 & 0.996 & 0.998 & 0.999 & 0.999 & 0.998   \\ 
768: \hline
769: 30      & 0.918 & 0.996 & 0.998 & 0.999 & 1.000 & 1.000 & 1.000 & 0.999 & 0.998  \\
770: \hline
771: 87     & 0.989 & 0.997 & 1.000 & 0.999 & 0.999 & 1.000 & 0.998 & 0.999 & 0.996   \\
772: \hline
773: 200    & 0.995 & 0.998 & 1.000 & 0.999 & 1.000 & 1.000 & 1.000 & 0.999 & 0.994   \\
774: \hline
775: 319    & 0.999 & 0.998 & 1.000 & 1.000 & 1.000 & 1.000 & 1.000 & 0.998 & 0.994  \\
776: \hline
777: 406    & 0.998 & 0.999 & 1.000 & 1.000 & 1.000 & 0.999 & 1.000 & 1.000 & 0.984  \\
778: \hline
779: \end{tabular} 
780: \end{center}
781: \label{table:s-3} 
782: \end{table}
783: %------------------------------------------------------------------------------
784: demonstrates the S--counter pion detection efficiency 
785:  when the threshold for the sum of both end signals is set to 2.5~p.e. 
786:    The detection efficiency is 
787:  close to 100~\% except 
788:  for the edge area where a part of the beam missed the counter due to  
789:  some misalignment between the beam counters and the tested detector. 
790:  For a higher threshold of 4.5~p.e set for the sum of the amplitudes from 
791:  the two ends, the MIP detection efficiency is greater than 98\%.  
792:   We can  conclude that  the l.y. of more 
793:  than 12~p.e. (sum of both ends)  satisfies the requirement  for the  
794:  S--counter
795:  to provide a detection 
796:  efficiency greater than 99\% for a MIP.  
797:  If we require that each MRS photodiode signal exceeds   0.5~p.e. 
798:   the MIP detection  efficiency is found  to  
799:  be about 99.5\%.
800: 
801: To make a detailed scan along the middle line of the S--counter the 
802: size of the beam spot  was reduced to 
803: $0.5\times 0.5$~cm$^2$.  The result is shown in 
804: Fig.~\ref{fig:scan-x-S}. 
805: %------------------------
806: \begin{figure}[htbp]
807: \centering\includegraphics[width=14cm,angle=0]{x-scan.eps}
808: \caption{The light yield scan of the S--counter along the x-axis. The 
809: beam spot 
810: size 
811: is $0.5\times 0.5$~cm$^2$, the scan step size is 1~cm. The sine--like waveform 
812: corresponds to the 
813: WLS fiber route with 58~mm spacing between neighboring segments.}
814: \label{fig:scan-x-S} 
815: \end{figure}
816: %------------------------
817: The WLS fiber route is clearly reflected in the pattern of the l.y. distribution 
818: along the x--axis. A maximum l.y. is observed in points where the beam crosses 
819: the fiber, while   the l.y. drops by about 20\% in between 
820: the fiber segments. Fig.~\ref{fig:scan-y-W} 
821: \begin{figure}[htbp] 
822: \centering\includegraphics[width=14cm,angle=0]{y-scan.eps}
823: \caption{The light yield scan of the W-counter along the  y--axis , that is 
824:  perpendicular to the 
825: fiber direction. The beam spot size is $0.5\times 0.5$~cm$^2$, and the scan step 
826: size is 1~cm.}
827: \label{fig:scan-y-W} 
828: \end{figure}
829: shows the result of the  transverse l.y. scan across the W--counter, 
830: which has a single 
831: straight groove running down the middle of the counter. The attenuation length of 
832: scintillation light  before capture by the WLS fiber is obtained to be 
833: $9.0 \pm 1.3$ cm and $7.2 \pm 1.2$ cm for the upper and the lower part of the
834: W--counter, respectively. These values are consistent within measurement
835: uncertainty, and 
836: the average attenuation length of such a counter is estimated to be about 
837: $8.1\pm 0.9$ cm. 
838: 
839: 
840: 
841: %------------------------------------------------------------------------------------
842: \subsection{Time and spatial resolution of the S--counter}
843: %-------------------------------------------------------------------------------------
844: The time resolution was measured with 
845: the discriminator thresholds  set to a  level of 0.5~p.e. for each 
846: MRS photodiode.  
847:  To suppress 
848: the timing spread caused by the trigger  counters (as in the cosmic ray test) 
849:  we used 
850: the 
851: combination $(T_{left} - T_{right})/2$ to determine the 
852: time resolution. 
853: The dependence of the  time resolution  on the light yield is presented in 
854: Fig.~\ref{fig:timing}. 
855: %------------------------
856: \begin{figure}[htbp] 
857: \centering\includegraphics[width=10cm,angle=0]{light_timing.eps}
858: \caption{The time resolution versus light yield in the center of 
859: the S--counter.}
860: \label{fig:timing} 
861: \end{figure}
862: %------------------------
863: The time resolution depends on photostatistics and is proportional to 
864:  $1/\sqrt{N_{pe}}$.  
865:   At a typical 
866: l.y. of 15~p.e./MIP $\sigma_t = 1.75$~ns is obtained.  The time resolution of the
867: S--counter is mainly  determined  by the slow decay time of the Y11 fiber. 
868: Green light 
869: travels along a WLS fiber at a speed of 17~cm/ns while the signal propagates 
870: along the counter at a  smaller speed of 7.4~cm/ns because of the fiber routing. 
871: The time spectra for 3 positions of the beam along the S--counter are shown in 
872: Fig.~\ref{fig:time-shift}. 
873: %---------------------
874: \begin{figure}[htbp] 
875: \centering\includegraphics[width=13cm,angle=0]{space_time.eps}
876: \caption{Time spectra for 3 positions along the S--counter. A distance of 
877: 81.2~cm corresponds to the  time shift of 11 ns between the left and right 
878: MRS signals.}
879: \label{fig:time-shift} 
880: \end{figure}
881: %------------------------
882:  The obtained time difference between left and right signals 
883:  allows us to extract 
884: the beam coordinate along the S--counter using the expression
885: \begin{equation}
886: x(T)=7.4[\frac{\rm cm}{\rm ns}]\times(T_{left}-T_{right})/2.
887: \label{eq:coordin}
888: \end{equation}
889: A spatial resolution of $\sigma_x =13.4$ cm is obtained  in the center of 
890: the S--counter 
891: and  $\sigma_{x(T)} = 10.4$ cm near both ends. 
892: 
893: The spatial resolution can be improved taking into account the light  attenuation
894: along the fiber. The  asymmetry between the signals from 
895: the left and right MRS photodiodes  
896: $(A_{left} - A_{right})/(A_{left}+A_{right})$ is sensitive  to the hit 
897: position of a MIP, but the spatial resolution obtained using the l.y. 
898: attenuation 
899: is poor ($\sigma_{x(A)} \sim 35 $ cm) because of 
900: large fluctuations in the light yields. However, the combination of both 
901: methods 
902: \begin{equation} 
903: x=\frac{x(T) + wx(A)}{1+w},
904: \label{eq:combination}
905: \end{equation}
906:  where $x(T)$ and $x(A)$ are the MIP positions obtained 
907: from timing and amplitude asymmetry with accuracies of $\sigma_{x(T)}$ and 
908: $\sigma_{x(A)}$, respectively.  The 
909: weight  $w$ is given by  $w=\sigma_{x(T)}^2/\sigma_{x(A)}^2$,
910: allows us to slightly improve the spatial
911: resolution.   Fig.~\ref{fig:space_resol} 
912: %%peredelatj risunok i podpisj k risunku
913: %------------------------
914: \begin{figure}[htbp]
915: \centering\includegraphics[width=11cm,angle=0]{spacex.eps}
916: \caption{The spatial resolution along the S--counter at 3 beam positions: 
917: (a) the coordinate $x$ is obtained from timing; (b) the coordinate $x$ is 
918: obtained from the asymmetry  between light yields at the two counter ends; 
919: (c) the combined position resolution.}
920: \label{fig:space_resol} 
921: \end{figure}
922: %-------------------------
923: shows the spatial resolution for three  beam positions obtained for the
924: combination of the signal timing and amplitude. 
925: The spatial resolution in the center of the S--counter is obtained to be 12.4 cm, 
926: while it is about 9.9 cm at both ends.  
927: 
928: %------------------------------------------------------------------------------------
929: \section{Conclusion}
930: %-------------------------------------------------------------------------------------
931: %conclusion about MRS performance
932: The scintillator counters for the SMRD of the T2K near detector have been
933: designed and tested.
934: The readout  of the  extruded  scintillator counters is provided via a WLS 
935: fiber which is embedded into an S--shape groove 
936:  and viewed from both ends by  multi--pixel avalanche
937: photodiodes operating in the limited Geiger mode. The studied 
938: MRS photodiodes demonstrate  good 
939: performance: a low cross-talk of a few per cent, the photon detection 
940: efficiency for green light of about 12\%,  and a long 
941: term stability. These devices are insensitive to magnetic fields, their 
942: calibration and stability control can be provided by means of the
943:  excellent p.e.  
944: peak resolution. The linearity range  of  the tested MRS photodiodes is less 
945: than 200 p.e. and the recovery 
946: time is about 5 $\mu$s. Although these parameters might be critical 
947: for some applications,  this  performance is  acceptable 
948: for  many detectors 
949: of the ND280 complex of the T2K experiment.  
950: 
951: An average l.y. of about 15~p.e./MIP, a  MIP detection efficiency 
952:  greater than 99.5\%,   a time resolution of 
953: 1.75~ns for a MIP, and a spatial resolution of  $\sigma_x = 9.9--12.4$~cm were 
954: obtained in a pion beam test.  
955:  
956:  
957: The authors are grateful to D.~Renker, A.~Akindinov and A.~Konaka 
958: for useful discussions.
959: This work was supported in part by the ``Neutrino Physics'' Programme 
960: of the Russian Academy of  Sciences.
961: 
962: %---------
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