1: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

2: %

3: % File: sq3.tex

4: % Date: 13-March-06

5: % Author: K. Brown  <kenbrown@mit.edu>

6: %         R. Clark  <robclark@mit.edu>

7: %	  J. Labaziewicz <labaziew@mit.edu>

8: %         D. Leibrandt <dleibran@mit.edu> 

9: % 	  P. Richerme <richerme@mit.edu>

10: %         I. Chuang <ichuang@mit.edu>

11: %

12: % Paper on UHV loading of San Quentin trap

13: %

14: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

15: %

16: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

17: 

18: %define some variables

19: \documentclass[groupedaddress,twocolumn,prl]{revtex4}

20: \usepackage{epsfig,amsfonts,amsmath,graphicx,subfigure}

21: 

22: %\usepackage[letterpaper]{geometry}

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25: \newcommand{\ba}{\begin{eqnarray}}

26: \newcommand{\ea}{\end{eqnarray}}

27: \def\ket#1{\left\vert #1 \right\rangle}

28: \def\bra#1{\left\langle #1 \right\vert}

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30: \def\R#1#2{R_{#1}( #2 ) }

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43: \newcommand{\eq}[1]{Eq.~(\ref{eq:#1})}

44: \newcommand{\fig}[1]{Fig.~\ref{fig:#1}}

45: \newcommand{\secref}[1]{Sec.~\ref{sec:#1}}

46: \newcommand{\Hp}{H_{\mathrm{pair}}}

47: \newcommand{\Up}{U_{\mathrm{pair}}}

48: \newcommand{\Vp}{V_{\mathrm{pair}}}

49: 

50: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

51: \begin{document}

52: 

53: \title{Electron impact ionization loading of a surface electrode ion trap}

54: 

55: \author{Kenneth R. Brown, Robert J. Clark, Jaroslaw Labaziewicz,

56: Philip Richerme, David R. Leibrandt, and Isaac L. Chuang}

57: 

58: \affiliation{Center for Bits and Atoms, Research Laboratory of

59: Electronics, \& Department of Physics\\ Massachusetts Institute of

60: Technology, Cambridge, Massachusetts 02139, USA}

61: 

62: \date{\today}

63: 

64: \begin{abstract}

65: 

66: We demonstrate a method for loading surface electrode ion traps by electron impact ionization. The method relies on the property of surface electrode geometries that the trap depth can be increased at the cost of more micromotion. By introducing a buffer gas, we can counteract the rf heating assocated with the micromotion and benefit from the larger trap depth. After an initial loading of the trap, standard compensation techniques can be used to cancel the stray fields resulting from charged dielectric and allow for the loading of the trap at ultra-high vacuum.

67: 

68: \end{abstract}

69: 

70: \pacs{}

71: 

72: \maketitle

73: 

74: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

75: % Introduction 

76: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

77: 

78: %Surface traps are kewl

79: 

80: Surface electrode ion traps \cite{Chiaverini:05, Pearson:06, Seidelin:06, Britton:06} offer significant potential for realizing complicated

81: geometries needed for large-scale quantum computation

82: \cite{Kielpinski:02}. Their advantages include greater ease of

83: fabrication than three dimensional (3D) layered planar traps

84: \cite{Barrett:04, Madsen:04, Monroe:06} and the ability to integrate control

85: electronics below the electrode surface \cite{Slusher:05}. However, the 2D geometery results in a shallow trap depth, which is $\sim 1/100$ of comparably

86: sized 3D traps \cite{Chiaverini:05}. In the presence of stray electric fields, the depth can become even shallower.

87: 

88: Stray electric fields can also displace ions from the zero point of the trap radiofrequency (rf) field. This causes undesired heating of ions, resulting from coupling of the rf-driven ``micromotion'' of one ion with the secular motion of neighboring ions. A well-developed technique to mitigate this effect is to apply dc \emph{compensation} voltages, usually to special electrodes placed around the ion \cite{Berkeland:98,Raab:00,Lisowski:05}. 

89: 

90: To find the experimental dc compensation values, one typically starts with the compensation values for an ideal trap. For a symmetric 3D linear trap, the expected compensation values are zero. The asymmetry of the 2D linear trap requires numerically solving Maxwell's equations to find compensated dc electrode values \cite{Seidelin:06} since the dc voltages used to confine the ions axially also shift the ion positions vertically, and since dielectric insulators needed between electrodes are neglected in analytical solutions. If an ion signal is easily observed, the experimental compensated values can be quickly found. However, large stray fields or trap imperfections often impede observation of ion signal and a random walk of the compensation voltages must be undertaken. 

91: 

92: Electron impact ionization, the standard method for loading ion traps, charges dielectrics in the vacuum chamber, leading to large stray fields.  Photoionization can be used to avoid creating stray charge at the cost of additional lasers and has been used to load shallow 2D and 3D traps \cite{Seidelin:06, Monroe:06}. Here we demonstrate a method for loading 2D traps with electron impact ionization that relies on the asymmetry of the trap and a buffer gas to obtain the initial signal.

93: 

94: %

95: An uncompensated trap leads to an increase in micromotion and is never advantageous for a 3D geometry. However, for a 2D geometry an applied field perpendicular to the surface can result in a significantly deeper trap in exchange for more micromotion \cite{Pearson:06}. In this setting, the number of ions loaded increases but laser cooling is not efficient enough to counter the rf heating, causing the ions to escape.

96: 

97: The increase in rf heating can be counteracted by introducing a non-reactive buffer gas \cite{Dehmelt:69,Moriwaki:92} that reduces ion temperature through collisional damping of hot ion motion. The buffer gas allows us to initially load the trap and determine the value of stray fields. After the stray fields have been compensated, the trap can be loaded at ultra-high vacuum (UHV). 

98: 

99: \begin{figure}[h]

100: \begin{center}

101: %\epsfig{file=fig1.eps, width=7cm, height=5cm}

102: \includegraphics[width=7cm]{fig1}

103: \caption{ (color online) (a) Layout of trap electrodes, each labeled with the voltage applied; all but $V_{\rm rf}$ are dc.  The space around the long

104: electrodes ($V_{\rm rf}$ and $V_1$) has been milled out. Coordinates

105: referenced as shown define the origin at the trap center and on the

106: chip surface.  (b) Photograph showing the top electrode plate mounted

107: $6.3$ mm above the trap.  The top plate has a slit for ion fluorescence

108: detection; a dc voltage $V_{top}$ applied to it can deepen the trap

109: depth. (c) CCD image of trapped strontium ions. \vspace{-3ex}}

110: \label{fig:pcb}

111: \end{center}

112: \end{figure}

113: 

114: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

115: % Experimental setup 

116: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

117: 

118: 

119: We demonstrate this loading method using strontium ions in a

120: $\sim 1$ mm-scale surface electrode trap. Following the design of a

121: traditional four-rod linear Paul trap system \cite{Berkeland:02}, the

122: trap is mounted in a standard UHV chamber pumped down to $\sim

123: 10^{-9}$ torr, loaded with $^{88}\mathrm{Sr}^+$ by electron

124: impact ionization of neutral atoms from a resistive oven source,

125: and driven by an externally mounted helical resonator.  An optional,

126: controlled buffer gas environment of up to $10^{-4}$ torr of

127: ultra-pure helium is provided though a sensitive leak valve, monitored

128: with a Bayard-Alpert ion gauge.

129: 

130: 

131: Our surface electrode ion trap has five

132: electrodes \cite{Chiaverini:05,Pearson:06}: one center electrode at

133: ground, two at rf potential, and two segmented dc

134: electrodes (\fig{pcb}).  The electrodes are copper, deposited on a low

135: rf loss substrate (Rogers 4350B), and fabricated by Hughes Circuits

136: following standard methods for microwave circuits.  In the loading

137: region, slots are milled between the rf and dc electrodes to prevent

138: shorting due to strontium buildup.  The inner surfaces are plated with

139: copper to minimize trap potential distortion due to accumulation of

140: stray surface charges.  The trap surface is polished to a $1$ $\mu$m

141: finish to reduce laser scatter into the detector.

142: 

143: 

144: Ions are detected by laser induced fluorescence of the main $422$ nm

145: $5S_{1/2} \rightarrow 5P_{1/2}$ transition of

146: strontium \cite{Berkeland:02}, using either an electron-multiplying CCD

147: camera (Princeton Instruments PhotonMax) or a photomultiplier tube

148: (Hamamatsu H6780-04). A laser tuned to $1092$ nm addresses the

149: $5P_{1/2} \rightarrow 4D_{3/2}$ transition to prevent shelving from

150: the $P$ state to the metastable $D$ state. The two external cavity

151: laser diode sources are optically locked to low finesse cavities

152: \cite{Hayasaka:02}.  Typical laser powers at the trap center are $1.2$

153: mW at $1092$ nm and $20$ - $50$ $\mu$W at $422$ nm.

154: 

155: % Trap potential

156: The first step for loading a surface electrode trap

157: is determination of the ideal compensation voltages needed to offset

158: the inherent asymmetry.  We determine these potentials numerically

159: (using CPO, a boundary element electrostatic solver \cite{Brkic:06}),

160: by computing the rf and dc potentials ($\phi_{\rm rf}\cos{\Omega t}$ and

161: $\phi_{\rm dc}$), which give the secular potential $\Phi =

162: Q^2\l|\nabla\phi_{\rm rf}\r|^2 /4m\Omega^2+Q\phi_{\rm dc}$

163: % \be 

164: % 	\Phi = \frac{Q^2}{4m\Omega^2}\l|\nabla\phi_{\rm rf}\r|^2+Q\phi_{\rm dc}

165: % \,,

166: % \ee 

167: where $m$ is the ion mass and $Q$ is the ion charge. Typically,

168: $V_{\rm rf}$ is of $500$-$1200$ V amplitude at $\Omega/2\pi = 7.6$ MHz,

169: and dc electrode voltages (as defined in Fig.~\ref{fig:pcb}) are $V_4

170: = V_5 = 0$ V, $V_2 = 110$ V, and $V_3 = -50$ V. Shown in

171: \fig{pot} is a cross-section of the secular potential in the

172: $\hat{x}$-$\hat{y}$ plane, at $z=0$, for three different values of $V_{top}$. As demonstrated in \fig{depth_pos_vtop}, with

173: these voltages and $V_{top} = -25.4$ V applied to the top electrode,

174: the trap should be compensated with a trap depth of $1.0$ eV.

175: The trap depth can be increased to $5.4$ eV by setting $V_{top} = 15$

176: V, at the cost of increased micromotion.

177:  

178: \begin{figure}

179: \begin{center}

180:     \mbox{

181:       \scriptsize a) \subfigure{\includegraphics[width=4.0cm]{fig2a}} \quad

182:       \scriptsize b) \subfigure{\includegraphics[width=4.0cm]{fig2b}}

183:          }\\

184:     \mbox{

185:       \scriptsize c) \subfigure{\includegraphics[width=4.0cm]{fig2c}}

186:          }

187: \normalsize

188: \caption{Cross sections of the pseudopotential along the $\hat{x}$ and $\hat{y}$ directions, for $V_{\rm rf}= 1260$ V at $\Omega/2\pi= 7.6$ MHz, $V_2= 110$ V, and $V_3=-50$ V. The three figures a, b, and c correspond to $V_{top}$ voltages of -25.4 V, 0 V, and 15 V respectively. Micromotion compensation is expected in the -25.4 V case, but with a depth of only 1 eV, while the uncompensated 15 V case has an expected depth of 5.4 eV.}

189: \label{fig:pot}

190: \end{center}

191: \end{figure}

192: 

193: \begin{figure}

194: \begin{center}

195: \includegraphics[width=6.0cm]{fig3}

196: \caption{Calculated values of trap depth (circles) and ion displacement from the rf null (diamonds) as $V_{top}$ is varied. As trap depth is increased, the displacement of the ion cloud from the rf null leads to increased micromotion.}

197: \label{fig:depth_pos_vtop}

198: \end{center}

199: \end{figure}

200: 

201: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

202: % Buffer gas and compensation

203: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

204: 

205: \begin{figure}

206: \begin{center}

207: %\epsfig{file=compdata/decayfig.eps, width=7cm, height=7cm}

208: \includegraphics[width=7cm]{fig4}

209: \caption{Plot of 1/lifetime as a function of fluorescence intensity at five different buffer gas pressures in an uncompensated trap. These data show that long lifetimes can be obtained at nearly any buffer gas pressure but at very different cloud sizes as measured by fluorescence intensity. The optimum settings, long lifetimes and large clouds, are obtained at high buffer gas pressure. \vspace{-3ex}}

210: \label{fig:decay}

211: \end{center}

212: \end{figure}

213: 

214: 

215: These ideal compensation voltages often differ substantially

216: from actual ones, due to the presence of unknown stray charges in the

217: trap.  A variety of techniques have been developed to experimentally

218: determine the appropriate voltages, including examination of the

219: single ion spectrum \cite{Raab:00,Lisowski:05}, the correlation

220: between ion fluorescence and the rf drive phase \cite{Berkeland:98},

221: and the change in ion position with pseudopotential depth

222: \cite{Berkeland:98}. The first two methods require cold and small ion

223: clouds necessitating good initial compensation.  We use the last method, which is also applicable to large hot ion clouds.  

224: 

225: 

226: We employ buffer gas cooling to load and maintain the large ion clouds

227: needed for experimental determination of appropriate compensation

228: voltages.  Initially, when the cloud center is 0.2 mm from the rf node, the size and lifetime of the loaded cloud depends strongly

229: on the buffer gas pressure (\fig{decay}). Notably, lifetimes at UHV were too short to be measured in the uncompensated trap.

230: Based on the data in \fig{decay}, we perform our compensation experiments at $1 \times 10^{-5}$

231: torr. This pressure yields an excellent signal to noise ratio ($\sim

232: 200$ for a $50$ ms integration time with the photomultiplier tube) and long ion

233: lifetime ($\sim 300$ s) without overburdening the ion pump. 

234: 

235: 

236: An accurate value of the stray dc field can be calculated from the

237: cloud motion using the following model. The electric field along a

238: coordinate $x$, at the rf node, is well approximated by $E(x) = E_0 +

239: E_1 x$.  For an rf pseudopotential with secular frequency $\omega$,

240: the ion motion follows $m \ddot{x} + m \omega^2 x + e E(x) = 0$, which

241: results in a new secular frequency $\omega_1 = \sqrt{(\omega^2 + e

242: E_1/m)}$, and a new cloud center position $x_0 = {e E_0}/{m

243: \omega_1^2}$. By measuring both the secular frequency and the ion

244: center, one can determine $E_0$.

245: 

246: We experimentally determine $E_0$ by measuring the

247: cloud center position as a function of applied voltages. The $1092$ nm

248: laser is configured to illuminate the entire trapping region, while

249: the $422$ nm laser is focused to a $60~\mu$m spot; the focal point is

250: translated in the $\hat{x}$-$\hat{y}$ plane by using a precision

251: motorized stage. Ion cloud fluorescence intensity, measured by the

252: PMT, is recorded as a function of laser position, and fit to a

253: Gaussian centered at the ion cloud position \cite{Neuhauser:88}.  This

254: measurement is then repeated at $10$ different rf voltages, and a

255: linear fit of the cloud center positions to $1/\omega_1^2$ determines

256: the stray dc field value $E_0$. $\omega_1$ is determined by applying an oscillating voltage on $V_5$ of 250 mV and observing dips in the ion fluorescence. 

257: 

258: 

259: \begin{figure}

260: \begin{center}

261: \includegraphics[width=7cm]{fig5}

262: \caption{Measurement results showing compensation of micromotion in

263: the trap at a buffer gas pressure of $1 \times 10^{-5}$ torr.  (a)

264: Cloud intensity profile along the $\hat{y}$ axis, fit to a Gaussian,

265: for a representative value of the the $\hat{y}$ compensation voltage,

266: $V_{top}$.  (b) Linear fit of the cloud center position versus

267: $1/\omega_1^2$ where $\omega_1$ is the secular frequency of the ion

268: motion, yielding the electric field along $\hat{y}$ at the rf node.

269: (c) Plot of the $\hat{y}$ electric field as a function of the $V_{top}$

270: compensating voltage, showing that the stray field is minimized at

271: $V_{top} = 1.0$ V. (d) Plot of the $\hat{x}$ electric field as a function of the

272: middle electrode voltage $V_5$, showing compensation at $V_{5} = 1.3$

273: V. \vspace{-3ex} }

274: \label{fig:exptfig}

275: \end{center}

276: \end{figure}

277: 

278: The data obtained, shown in \fig{exptfig}, give an excellent match of

279: the cloud intensity to a Gaussian fit, allowing measurement of the

280: cloud center to within $\pm 0.5~\mu$m. Thus, the measurement of stray

281: fields is precise to about $\pm 10$V/m at zero stray field. From the

282: stray field measurements, we determine the required compensation

283: voltages to be $V_{top} = 1.0 \pm 0.1$ V and $V_5 = 1.3 \pm 0.3$

284: V. The estimated residual displacement of a single ion at these

285: voltages is less than $0.2~\mu$m.  The nonlinear dependence of the dc

286: electric field along $\hat{y}$ on the top electrode voltage is due to

287: the strong anharmonicity of the trap in the vertical direction,

288: unaccounted for in the simple linear model employed in the analysis.

289: 

290: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

291: % Conclusions

292: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

293: 

294: The difference between measured and ideal compensation voltages is

295: evidence of anisotropic stray fields, caused by undetermined surface

296: charges.  The estimated stray fields along $\hat{x}$ are comparable to

297: those reported for 3D traps \cite{Berkeland:98}. However, the stray

298: fields along $\hat{y}$ are $10$ times larger. The $26$ V difference

299: between the calculated and measured values of $V_{top}$ at

300: compensation suggests significant electron charging on either the trap

301: surface, the top plate, or the top observation window. 

302: 

303: 

304: In summary, we have loaded a surface electrode ion

305: trap by electron impact ionization at UHV by using an uncompensated trap to increase trap depth and a large cloud in buffer gas to find the compensation values. The results suggest that the open geometry of the trap makes it more susceptible to stray surface charges. The technique demonstrated

306: will likely be useful for the loading of complex and integrated surface electrode ion traps.

307: 

308: Support for this project was provided in part by the JST/CREST Urabe

309: Project, and MURI project F49620-03-1-0420.  We thank Rainer Blatt,

310: Richart Slusher, Vladan Vuletic, and David Wineland for helpful

311: discussions.

312: 

313: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

314: \bibliographystyle{apsrev} 

315: 

316: \begin{thebibliography}{14}

317: \expandafter\ifx\csname natexlab\endcsname\relax\def\natexlab#1{#1}\fi

318: \expandafter\ifx\csname bibnamefont\endcsname\relax

319:   \def\bibnamefont#1{#1}\fi

320: \expandafter\ifx\csname bibfnamefont\endcsname\relax

321:   \def\bibfnamefont#1{#1}\fi

322: \expandafter\ifx\csname citenamefont\endcsname\relax

323:   \def\citenamefont#1{#1}\fi

324: \expandafter\ifx\csname url\endcsname\relax

325:   \def\url#1{\texttt{#1}}\fi

326: \expandafter\ifx\csname urlprefix\endcsname\relax\def\urlprefix{URL }\fi

327: \providecommand{\bibinfo}[2]{#2}

328: \providecommand{\eprint}[2][]{\url{#2}}

329: 

330: \bibitem[{\citenamefont{Chiaverini et~al.}(2005)\citenamefont{Chiaverini,

331:   Blakestad, Britton, Jost, Langer, Leibfried, Ozeri, and

332:   Wineland}}]{Chiaverini:05}

333: \bibinfo{author}{\bibfnamefont{J.}~\bibnamefont{Chiaverini}},

334:   \bibinfo{author}{\bibfnamefont{R.~B.} \bibnamefont{Blakestad}},

335:   \bibinfo{author}{\bibfnamefont{J.}~\bibnamefont{Britton}},

336:   \bibinfo{author}{\bibfnamefont{J.~D.} \bibnamefont{Jost}},

337:   \bibinfo{author}{\bibfnamefont{C.}~\bibnamefont{Langer}},

338:   \bibinfo{author}{\bibfnamefont{D.}~\bibnamefont{Leibfried}},

339:   \bibinfo{author}{\bibfnamefont{R.}~\bibnamefont{Ozeri}}, \bibnamefont{and}

340:   \bibinfo{author}{\bibfnamefont{D.~J.} \bibnamefont{Wineland}},

341:   \bibinfo{journal}{Quant. Inf. and Comp.} \textbf{\bibinfo{volume}{5}},

342:   \bibinfo{pages}{419} (\bibinfo{year}{2005}).

343: 

344: \bibitem[{\citenamefont{Pearson et~al.}(2006)\citenamefont{Pearson, Leibrandt,

345:   Bakr, Mallard, Brown, and Chuang}}]{Pearson:06}

346: \bibinfo{author}{\bibfnamefont{C.~E.} \bibnamefont{Pearson}},

347:   \bibinfo{author}{\bibfnamefont{D.~R.} \bibnamefont{Leibrandt}},

348:   \bibinfo{author}{\bibfnamefont{W.~S.} \bibnamefont{Bakr}},

349:   \bibinfo{author}{\bibfnamefont{W.~J.} \bibnamefont{Mallard}},

350:   \bibinfo{author}{\bibfnamefont{K.~R.} \bibnamefont{Brown}}, \bibnamefont{and}

351:   \bibinfo{author}{\bibfnamefont{I.~L.} \bibnamefont{Chuang}},

352:   \bibinfo{journal}{Phys. Rev. A}  \textbf{\bibinfo{volume}{73}},

353:   \bibinfo{pages}{032307} (\bibinfo{year}{2006}).

354: 

355: \bibitem[{\citenamefont{Seidelin et~al.}(2006)\citenamefont{Seidelin,

356:   Chiaverini, Reichle, Bollinger, Leibfried, Britton, Wesenberg, Blakestad,

357:   Epstein, Hume et~al.}}]{Seidelin:06}

358: \bibinfo{author}{\bibfnamefont{S.}~\bibnamefont{Seidelin}},

359:   \bibinfo{author}{\bibfnamefont{J.}~\bibnamefont{Chiaverini}},

360:   \bibinfo{author}{\bibfnamefont{R.}~\bibnamefont{Reichle}},

361:   \bibinfo{author}{\bibfnamefont{J.~J.} \bibnamefont{Bollinger}},

362:   \bibinfo{author}{\bibfnamefont{D.}~\bibnamefont{Leibfried}},

363:   \bibinfo{author}{\bibfnamefont{J.}~\bibnamefont{Britton}},

364:   \bibinfo{author}{\bibfnamefont{J.~H.} \bibnamefont{Wesenberg}},

365:   \bibinfo{author}{\bibfnamefont{R.~B.} \bibnamefont{Blakestad}},

366:   \bibinfo{author}{\bibfnamefont{R.~J.} \bibnamefont{Epstein}},

367:   \bibinfo{author}{\bibfnamefont{D.~B.} \bibnamefont{Hume}},

368:    \bibinfo{author}{\bibfnamefont{J.~D.} \bibnamefont{Jost}},

369:   \bibinfo{author}{\bibfnamefont{C.} \bibnamefont{Langer}},

370:   \bibinfo{author}{\bibfnamefont{R.} \bibnamefont{Ozeri}}, \bibnamefont{and}

371:   \bibinfo{author}{\bibfnamefont{D.~J.} \bibnamefont{Wineland}}, \bibinfo{note}{quant-ph/0601173}.

372: 

373: \bibitem[{\citenamefont{Britton et~al.}(2006)\citenamefont{Britton et~al.}}]{Britton:06}

374:  \bibinfo{author}{\bibfnamefont{J.}~\bibnamefont{Britton}},

375:   \bibinfo{author}{\bibfnamefont{D.}~\bibnamefont{Leibfried}},

376:   \bibinfo{author}{\bibnamefont{J.}~\bibnamefont{Beall}},

377:   \bibinfo{author}{\bibfnamefont{R.~B.} \bibnamefont{Blakestad}},

378: \bibinfo{author}{\bibfnamefont{J.~J.} \bibnamefont{Bollinger}},

379:   \bibinfo{author}{\bibfnamefont{J.}~\bibnamefont{Chiaverini}},

380:    \bibinfo{author}{\bibfnamefont{J.~H.} \bibnamefont{Wesenberg}},

381:    \bibinfo{author}{\bibfnamefont{R.~J.} \bibnamefont{Epstein}},

382:     \bibinfo{author}{\bibfnamefont{J.~D.} \bibnamefont{Jost}},

383:   \bibinfo{author}{\bibfnamefont{D.} \bibnamefont{Kielpinski}},

384:  \bibinfo{author}{\bibfnamefont{C.} \bibnamefont{Langer}},

385:   \bibinfo{author}{\bibfnamefont{R.} \bibnamefont{Ozeri}},

386: \bibinfo{author}{\bibfnamefont{S.}~\bibnamefont{Seidelin}},

387: \bibinfo{author}{\bibfnamefont{R.~J.}~\bibnamefont{Reichle}},

388: \bibinfo{author}{\bibfnamefont{N.}~\bibnamefont{Shiga}},

389: \bibinfo{author}{\bibfnamefont{J.~H.} \bibnamefont{Wesenberg}}, 

390: \bibnamefont{and} \bibinfo{author}{\bibfnamefont{D.~J.} \bibnamefont{Wineland}}, \bibinfo{note}{quant-ph/0605170}.

391: 

392: \bibitem[{\citenamefont{Kielpinski et~al.}(2002)\citenamefont{Kielpinski,

393:   Monroe, and Wineland}}]{Kielpinski:02}

394: \bibinfo{author}{\bibfnamefont{D.}~\bibnamefont{Kielpinski}},

395:   \bibinfo{author}{\bibfnamefont{C.}~\bibnamefont{Monroe}}, \bibnamefont{and}

396:   \bibinfo{author}{\bibfnamefont{D.~J.} \bibnamefont{Wineland}},

397:   \bibinfo{journal}{Nature} \textbf{\bibinfo{volume}{417}},

398:   \bibinfo{pages}{709} (\bibinfo{year}{2002}).

399: 

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401: \bibinfo{author}{\bibfnamefont{M.~D.} \bibnamefont{Barrett}},

402:    \bibinfo{author}{\bibfnamefont{J.} \bibnamefont{Chiaverini}},

403:   \bibinfo{author}{\bibfnamefont{T.} \bibnamefont{Schaetz}},

404:   \bibinfo{author}{\bibfnamefont{J.} \bibnamefont{Britton}},

405:     \bibinfo{author}{\bibfnamefont{W.~M.} \bibnamefont{Itano}},

406:   \bibinfo{author}{\bibfnamefont{J.~D.} \bibnamefont{Jost}},

407:   \bibinfo{author}{\bibfnamefont{E.} \bibnamefont{Knill}},

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525: 

526: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

527: %%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%%

528: \end{document}

529: 

530: 

531: